公开(公告)号：US08004848B2

公开(公告)日：2011-08-23

申请号：US12126313

申请日：2008-05-23

申请人： Seung-Duk Baek ,  Mitsuo Umemoto ,  Kang-Wook Lee

发明人： Seung-Duk Baek ,  Mitsuo Umemoto ,  Kang-Wook Lee

IPC分类号： H01L23/02

CPC分类号： H01L25/0657 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541

摘要： Provided are a high reliability stack module fabricated at low cost by using simplified processes, a card using the stack module, and a system using the stack module. In the stack module, unit substrates are stacked with respect to each other and each unit substrate includes a selection terminal. First selection lines are electrically connected to selection terminals of first unit substrates disposed in odd-number layers, pass through some of the unit substrates, and extend to a lowermost substrate of the unit substrates. Second selection lines are electrically connected to selection terminals of second unit substrates disposed in even-number layers, pass through some of the unit substrates, and extend to the lowermost substrate of the unit substrates. The selection terminal is disposed between the first selection lines and the second selection lines.

摘要翻译： 提供了通过使用简化的处理以低成本制造的高可靠性堆栈模块，使用堆栈模块的卡和使用堆栈模块的系统。 在堆叠模块中，单元基板相对于彼此层叠，并且每个单元基板包括选择端子。 第一选择线电连接到设置在奇数层的第一单元基板的选择端子，通过一些单元基板，并延伸到单元基板的最下面的基板。 第二选择线电连接到以偶数层布置的第二单元基板的选择端子，通过一些单元基板，并延伸到单元基板的最下面的基板。 选择端子设置在第一选择线和第二选择线之间。

公开(公告)号：US07382037B2

公开(公告)日：2008-06-03

申请号：US11236881

申请日：2005-09-28

申请人： Mitsuo Umemoto ,  Kojiro Kameyama ,  Akira Suzuki

发明人： Mitsuo Umemoto ,  Kojiro Kameyama ,  Akira Suzuki

IPC分类号： H01L23/544

CPC分类号： H01L27/1462 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/564 ,  H01L27/14636 ,  H01L2924/0002 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  H01L2924/00

摘要： The invention is directed to improvement of reliability of a semiconductor device having penetrating electrodes by preventing a protection film and an insulation film peeling. A peeling prevention layer for preventing an insulation film and a protection layer peeling is formed in corner portions of the semiconductor device. The peeling prevention layer can increase its peeling prevention effect more when formed in a vacant space of the semiconductor device other than the corner portions, for example, between ball-shaped conductive terminals. In a cross section of the semiconductor device, the peeling prevention layer is formed on the insulation film on the back surface of the semiconductor substrate, and the protection layer formed of a solder resist or the like is formed covering the insulation film and the peeling prevention layer. The peeling prevention layer has a lamination structure of a barrier seed layer and a copper layer formed thereon when formed by an electrolytic plating method.

摘要翻译： 本发明旨在通过防止保护膜和绝缘膜剥离来提高具有穿透电极的半导体器件的可靠性。 在半导体器件的角部形成有用于防止绝缘膜和保护层剥离的防剥层。 当形成在除了角部之外的半导体器件的空置空间中时，例如在球形导电端子之间，防剥层可以增加其防剥离效果。 在半导体器件的横截面中，在半导体衬底的背面上的绝缘膜上形成防剥层，并且形成覆盖绝缘膜的防焊层等形成的防剥离层 层。 当通过电解电镀法形成时，防剥层具有阻挡种子层和形成在其上的铜层的叠层结构。

公开(公告)号：US07339273B2

公开(公告)日：2008-03-04

申请号：US11257390

申请日：2005-10-25

申请人： Kojiro Kameyama ,  Akira Suzuki ,  Mitsuo Umemoto

发明人： Kojiro Kameyama ,  Akira Suzuki ,  Mitsuo Umemoto

IPC分类号： H01L29/40 ,  H01L23/52 ,  H01L23/48 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/351 ,  Y10S438/978 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A semiconductor substrate is etched to form a via hole from a back surface of the semiconductor substrate to a pad electrode. This etching is performed under an etching condition such that an opening diameter of the via hole at its bottom is larger than a width of the pad electrode. Next, a second insulation film is formed on the back surface of the semiconductor substrate including in the via hole 16, exposing the pad electrode at the bottom of the via hole. Next, a penetrating electrode and a wiring layer are formed, being electrically connected with the pad electrode exposed at the bottom of the via hole 16. Furthermore, a protection layer and a conductive terminal are formed. Finally, the semiconductor substrate is cut and separated in semiconductor dies by dicing.

摘要翻译： 本发明涉及一种具有穿透电极的半导体器件及其制造方法，其中提高了半导体器件的可靠性和产量。 蚀刻半导体衬底以从半导体衬底的背表面到焊盘电极形成通孔。 该蚀刻在蚀刻条件下进行，使得其底部的通孔的开口直径大于焊盘电极的宽度。 接下来，在包括在通孔16中的半导体衬底的背面上形成第二绝缘膜，使通孔底部的焊盘电极露出。 接下来，形成贯通电极和布线层，与在通孔16的底部露出的焊盘电极电连接。 此外，形成保护层和导电端子。 最后，通过切割在半导体管芯中切割和分离半导体衬底。

公开(公告)号：US20070228554A1

公开(公告)日：2007-10-04

申请号：US11692596

申请日：2007-03-28

申请人： Hideaki Yoshimi ,  Mitsuo Umemoto ,  Kazumi Onda ,  Kazumi Horinaka

发明人： Hideaki Yoshimi ,  Mitsuo Umemoto ,  Kazumi Onda ,  Kazumi Horinaka

IPC分类号： H01L23/34

CPC分类号： H01L21/78 ,  H01L23/367 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor substrate; a heat sink mounted on an upper surface of the semiconductor substrate; wirings formed on a lower surface of the semiconductor substrate; and the like. The heat sink is mounted on the upper surface of the semiconductor substrate, and a planar size thereof is approximately the same as that of the semiconductor substrate. Moreover, the heat sink has a thickness of 500 μm to 2 mm, and may be formed to be thicker than the semiconductor substrate. By using the heat sink to reinforce the substrate, a thickness of the semiconductor substrate can be reduced to, for example, about 50 μm. As a result, a thickness of the entire semiconductor device can be reduced.

摘要翻译： 半导体器件包括：半导体衬底; 安装在所述半导体衬底的上表面上的散热器; 形成在半导体衬底的下表面上的布线; 等等。 散热器安装在半导体衬底的上表面上，其平面尺寸与半导体衬底大致相同。 此外，散热器的厚度为500μm至2mm，并且可以形成为比半导体衬底更厚。 通过使用散热器来加强基板，可以将半导体基板的厚度减小到例如约50μm。 结果，可以减小整个半导体器件的厚度。

公开(公告)号：US07227262B2

公开(公告)日：2007-06-05

申请号：US10954649

申请日：2004-10-01

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：形成覆盖形成有电极的半导体衬底的表面的钝化膜，其中形成有开口以从电极中露出预定电极; 在钝化膜中的开口附近形成第一金属的防扩散插塞; 将第二金属材料供给到已经形成有扩散防止塞的半导体基板的表面上，以形成第二金属的籽晶层; 形成覆盖种子层并形成有开口的抗蚀剂膜，以暴露防扩散插塞上的籽晶层的预定区域; 将第三金属材料供应到所述抗蚀剂膜的开口中，以形成所述第三金属的突出电极; 在形成突起电极的步骤之后去除抗蚀剂膜; 以及在形成突起电极的步骤之后去除种子层。

公开(公告)号：US20070080457A1

公开(公告)日：2007-04-12

申请号：US11635044

申请日：2006-12-07

申请人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

发明人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/1134 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid state device where a solid state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid state device side connection member.

摘要翻译： 半导体装置的制造方法包括：准备半导体芯片的步骤，该半导体芯片设置有形成在半导体基板的正面侧的功能元件，放置在贯通半导体基板的通孔内的馈通电极， 从前表面突出的前表面侧连接构件和在形成在后表面的凹部内具有接合表面的后表面侧连接构件; 制备固态器件的步骤，其中在一个表面上形成用于连接到前表面侧连接部件的固态器件侧连接部件; 并且通过保持半导体芯片的后表面并将前表面侧连接构件接合到固态器件侧连接构件，使半导体芯片的前表面面向固态器件的第一表面的接合步骤。

公开(公告)号：US07169639B2

公开(公告)日：2007-01-30

申请号：US10824639

申请日：2004-04-15

申请人： Mitsuo Umemoto ,  Kazumasa Tanida

发明人： Mitsuo Umemoto ,  Kazumasa Tanida

IPC分类号： H01L21/44

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a semiconductor device manufacturing method which can provide high reliability in electric connection between an electrode of a semiconductor chip and a substrate. Sealing resin is coated in a region of a substrate where a first electrode is not formed. A semiconductor chip formed with a second electrode on its end portion is prepared and disposed so as to face to a front surface of the substrate. The end portion of the semiconductor chip is pressed from its back surface by shifting a first movable plate downward to press the second electrode into contact with the first electrode. After then, a center portion of the semiconductor chip is pressed from its back surface by shifting a second movable plate downward to fill a space between the substrate and the semiconductor chip with the sealing resin.

摘要翻译： 本发明涉及一种半导体器件制造方法，其可以提供半导体芯片的电极与基板之间的电连接的高可靠性。 在不形成第一电极的基板的区域中涂布密封树脂。 制备在其端部上形成有第二电极的半导体芯片，并设置成面向基板的前表面。 半导体芯片的端部通过向下移动第一可动板而将第二电极与第一电极接触来从其背面按压。 然后，通过向下移动第二可移动板，用密封树脂填充基板和半导体芯片之间的空间，从其背面按压半导体芯片的中心部分。

公开(公告)号：US20060202348A1

公开(公告)日：2006-09-14

申请号：US11362503

申请日：2006-02-27

申请人： Kojiro Kameyama ,  Akira Suzuki ,  Yoshio Okayama ,  Mitsuo Umemoto

发明人： Kojiro Kameyama ,  Akira Suzuki ,  Yoshio Okayama ,  Mitsuo Umemoto

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L24/11 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/12 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括通过第一绝缘层形成在半导体衬底上的焊盘电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中通孔包括 第一开口部，其靠近焊盘电极的部分的直径大于靠近半导体基板的背面的部分的直径;以及第二开口，形成在第一绝缘层中并与第一开口连续， 其中靠近焊盘电极的部分的直径小于靠近半导体衬底的前表面的部分的直径。

公开(公告)号：US20060194367A1

公开(公告)日：2006-08-31

申请号：US11396797

申请日：2006-04-04

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05611 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166

摘要： A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成第一金属的阻挡掩模层的步骤，所述阻挡掩模层在其预定位置具有开口; 所述金属供给步骤将第二金属供给到所述阻挡掩模层的开口中，以形成所述第二金属的突起电极; 以及在金属供给步骤之后移除止动掩模层。

公开(公告)号：US20050151228A1

公开(公告)日：2005-07-14

申请号：US11003769

申请日：2004-12-06

申请人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yoshihiko Nemoto ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yoshihiko Nemoto ,  Kenji Takahashi

IPC分类号： H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/46 ,  H01L21/60 ,  H01L21/768 ,  H01L23/12 ,  H01L23/48 ,  H01L23/544 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L23/481 ,  H01L21/76843 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012

摘要： The invention provides a semiconductor chip manufacturing method including the steps of: forming a concave portion extended in the thickness direction of a semiconductor substrate which has a front surface and a rear surface and has a function device formed on the front surface, from the front surface; forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion; supplying a second metal material containing a metal which is oxidized more easily than the first metal material to the inside of the concave portion after the step of forming the oxidation preventive film; electrically connecting the second metal material supplied to the inside of the concave portion and the function device; and thinning the semiconductor substrate so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film.

摘要翻译： 本发明提供一种半导体芯片制造方法，包括以下步骤：在具有前表面和后表面的半导体衬底的厚度方向上形成有从前表面形成的功能器件的凹部 ; 通过将所述第一金属材料供应到所述凹部的内壁表面上，形成由惰性第一金属材料制成的防氧化膜; 在形成氧化防止膜的步骤之后，将含有比第一金属材料更容易氧化的金属的第二金属材料供给到凹部内部; 电连接供应到凹部内侧的第二金属材料和功能装置; 并且通过在离开氧化防止膜的同时从后表面除去半导体衬底，使半导体衬底的厚度变薄到比凹部的深度更薄。