公开(公告)号：US11749504B2

公开(公告)日：2023-09-05

申请号：US15908065

申请日：2018-02-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Gary Leray

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32155 ,  H01J2237/334

Abstract: Methods and apparatus for supplying radio frequency (RF) power to a process chamber. An RF generator is configured with a capability to operate with an RF power output independent of a reference frequency or synchronize the RF output power to the reference frequency. A clock ramp is used to change an RF power output frequency of the RF output power to match the reference frequency when the frequencies are in an unlocked state. When the RF power output frequency reaches the reference frequency, the RF power output can be locked to the reference frequency.

公开(公告)号：US11749502B2

公开(公告)日：2023-09-05

申请号：US17095278

申请日：2020-11-11

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Gang Wei ,  Jing Wei ,  Jing Yang

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32155 ,  H01J37/32183 ,  H05H1/46 ,  H05H2242/26

Abstract: A pulse modulation system of a radio frequency (RF) power supply includes a modulation output circuit and a frequency adjustment circuit. The modulation output circuit is configured to modulate an output signal of the RF power supply and output a pulse modulation RF signal. Each pulse cycle of the pulse modulation RF signal includes a pulse-on phase and a pulse-off phase. An overshoot sub-phase is set in an initial preset time of the pulse-on phase. The frequency adjustment circuit is electrically connected to the modulation output circuit. The frequency adjustment circuit is configured to adjust an RF frequency of the pulse modulation RF signal of the overshoot sub-phase to cause a reflected power of the overshoot sub-phase to satisfy a preset reflected power or a reflected coefficient to satisfy a preset reflected coefficient.

公开(公告)号：US20230272530A1

公开(公告)日：2023-08-31

申请号：US18142654

申请日：2023-05-03

Applicant: Suhail ANWAR ,  Yui Lun WU ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Jeevan Prakash SEQUEIRA

Inventor： Suhail ANWAR ,  Yui Lun WU ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Jeevan Prakash SEQUEIRA

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505

CPC classification number: C23C16/45559 ,  H01J37/32449 ,  H01J37/32183 ,  C23C16/505 ,  H01J37/3211 ,  H01J2237/3323 ,  H01J2237/3321 ,  H01J2237/3325

Abstract: Embodiments described herein provide a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber. The lid assembly includes a plasma generation system and a gas distribution assembly. The plasma generation system includes a plurality of dielectric plates having a bottom surface oriented with respect to vacuum pressure and a top surface operable to be oriented with respect to atmospheric pressure. One or more coils are positioned on or over the plurality of dielectric plates. The gas distribution assembly includes a first diffuser and a second diffuser. The first diffuser includes a plurality of first channels intersecting a plurality of second channels of the second diffuser.

公开(公告)号：US11742187B2

公开(公告)日：2023-08-29

申请号：US16473775

申请日：2017-10-17

Applicant: Evatec AG

Inventor： Johannes Weichart ,  Jurgen Weichart

IPC: H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C14/35 ,  C23C16/44 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32834 ,  C23C14/35 ,  C23C16/4412 ,  C23C16/466 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/2633 ,  H01L21/3065 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/3341

Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

公开(公告)号：US20230246607A1

公开(公告)日：2023-08-03

申请号：US18299808

申请日：2023-04-13

Applicant: Massachusetts Institute of Technology

Inventor： Haoquan Zhang ,  Anas Al Bastami ,  David J. Perreault

IPC: H03F3/21 ,  H01J37/32

CPC classification number: H03F3/211 ,  H01J37/32183 ,  H03F2200/451

Abstract: A power generator includes a plurality of amplifier blocks and a combiner. Each of the amplifier blocks include one or more amplifiers, and the combiner combines modulated power signals output from the amplifier blocks to generate an RF power signal of a load. The amplifier blocks are controlled to outphase the modulated power signals based on a phase angle. Ones of the amplifier blocks may perform discrete modulation to generate a respective one of the modulated power signals. The discrete modulation includes selecting different combinations of the amplifiers in one or more of the amplifier blocks to change the RF power signal in discrete steps. In embodiments, the amplifiers may be radio frequency power amplifiers.

公开(公告)号：US11716805B2

公开(公告)日：2023-08-01

申请号：US17558332

申请日：2021-12-21

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ricky Marsh ,  Alex Paterson

IPC: H01J37/32 ,  H05H1/46 ,  H03F3/217

CPC classification number: H05H1/46 ,  H01J37/32174 ,  H01J37/32183 ,  H03F3/2173 ,  H05H1/466 ,  H05H1/4652 ,  H05H2242/10 ,  H05H2242/24

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

公开(公告)号：US20230215696A1

公开(公告)日：2023-07-06

申请号：US18120591

申请日：2023-03-13

Applicant: Reno Technologies, Inc.

Inventor： Ronald Anthony DECKER ,  Imran Ahmed BHUTTA

IPC: H01J37/32 ,  H03H7/38 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/67 ,  H03H7/40

CPC classification number: H01J37/32183 ,  H03H7/38 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/28556 ,  H01L21/67069 ,  H01L21/31138 ,  H03H7/40 ,  H01J2237/332 ,  H01J2237/334

Abstract: In one embodiment, a system includes an RF source and an RF impedance matching circuit receiving RF power from the RF source. The matching circuit includes at least one variable reactance element, a sensor operably coupled to a component of the matching circuit, and a control circuit. The control circuit receives a signal from the sensor indicative of a parameter value. Upon determining the parameter value meets a first predetermined condition, the control circuit transmits a control signal to the RF source causing the RF source to carry out a power control scheme. The power control scheme causes the RF source to reduce or maintain the RF power without turning off the RF power.

公开(公告)号：US20230207264A1

公开(公告)日：2023-06-29

申请号：US18086406

申请日：2022-12-21

Applicant: DAIHEN CORPORATION

Inventor： Yuichi HASEGAWA

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J2237/327

Abstract: To simplify a process of suppressing an increase in a reflected wave power caused by IMD, provided is a high-frequency power supply system for providing a high-frequency power to a load, including: a first power supply for supplying a first high-frequency power to the load; a second power supply for supplying a second high-frequency power to the load; and a matching device. The matching device provides a system clock to each of the first power supply and the second power supply. The second power supply outputs a second high-frequency voltage at a control period determined based on the system clock provided from the matching device. The first power supply outputs a first high-frequency voltage obtained by frequency modulation of a fundamental wave signal having a first fundamental frequency and through amplification, in each control period determined based on the system clock provided from the matching device.

公开(公告)号：US20230197411A1

公开(公告)日：2023-06-22

申请号：US18080700

申请日：2022-12-13

Applicant: SEMES CO., LTD.

Inventor： Hyun Jin KIM ,  Jung Hwan LEE ,  Galstyan OGSEN ,  Sung Suk WI ,  Min Keun BAE

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H03H7/38 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/3343

Abstract: An impedance matching circuit, which is provided for quick impedance matching, a power supply apparatus, and a plasma processing equipment including the same are provided. The impedance matching circuit includes a parallel capacitor array connected to a radio frequency (RF) power supply to generate a RF signal, and a series capacitor array connected to the RF power supply in series, wherein the parallel capacitor array or the series capacitor array includes a mechanical vacuum variable capacitor and an electrical switch capacitor module connected to the mechanical vacuum variable capacitor in parallel.

公开(公告)号：US20230187189A1

公开(公告)日：2023-06-15

申请号：US17864541

申请日：2022-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungsub Jung ,  Sungyeol Kim ,  Sungyong Lim ,  Jaehyun Choi ,  Kyungmin Lee ,  Seungkyu Lim

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32935 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32926 ,  C23C16/52 ,  C23C16/509 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J37/32183

Abstract: a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.