公开(公告)号：US09911786B2

公开(公告)日：2018-03-06

申请号：US15472882

申请日：2017-03-29

申请人： Epistar Corporation

发明人： Chiu-Lin Yao ,  Chih-Chiang Lu

IPC分类号： H01L33/62 ,  H01L27/15 ,  H01L33/64 ,  H01L33/44 ,  H01L33/38 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/24 ,  H01L33/22 ,  H01L33/00 ,  H01L29/861 ,  H01L29/20 ,  H01L29/22 ,  H01L29/66

CPC分类号： H01L27/15 ,  H01L25/075 ,  H01L25/0753 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/6609 ,  H01L29/66969 ,  H01L29/861 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2924/00

摘要： The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the heat dispersion substrate; a diode stack structure comprising a protection layer and a second connecting layer on the protection layer, wherein the protection layer is on the first connecting layer; a light-emitting structure on the diode stack structure, wherein the light-emitting structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a first electrode electrically connected to the diode stack structure and the light-emitting structure.

公开(公告)号：US09887298B2

公开(公告)日：2018-02-06

申请号：US14964950

申请日：2015-12-10

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04 ,  H01L29/22 ,  H01L29/221 ,  H01L29/24 ,  H01L29/66 ,  H01L29/26 ,  H01L29/423 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2206 ,  H01L29/221 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

摘要： An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.

公开(公告)号：US09874663B2

公开(公告)日：2018-01-23

申请号：US14775327

申请日：2014-02-26

申请人： OSRAM Opto Semiconductors GmbH

发明人： Ulrich Streppel

IPC分类号： H01L29/22 ,  G02B3/08 ,  H01L33/50 ,  F21V5/00 ,  F21V5/02 ,  F21V5/04 ,  G02B3/06 ,  G02B5/02 ,  H01L33/58 ,  G02B19/00 ,  G02B7/02 ,  G02B17/00 ,  G02B27/09 ,  F21Y101/00 ,  F21Y115/10

CPC分类号： G02B3/08 ,  F21V5/005 ,  F21V5/02 ,  F21V5/043 ,  F21V5/045 ,  F21Y2101/00 ,  F21Y2115/10 ,  G02B3/06 ,  G02B5/0231 ,  G02B5/0278 ,  G02B7/02 ,  G02B17/006 ,  G02B19/0014 ,  G02B19/0061 ,  G02B27/0955 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/19107 ,  H01L2924/00

摘要： An optical element has a first surface and a second surface, wherein a tooth structure having a multiplicity of teeth oriented in a second direction is arranged on the first surface, a stepped lens having a multiplicity of steps oriented in a first direction is arranged on the second surface, and the tooth structure forms a total internal reflection lens.

公开(公告)号：US09799716B2

公开(公告)日：2017-10-24

申请号：US15193584

申请日：2016-06-27

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Kaoru Hatano ,  Satoshi Seo

IPC分类号： H01L29/22 ,  H01L27/32 ,  H01L51/00 ,  H01L33/62 ,  H01L29/24 ,  H01L29/786 ,  H01L51/56 ,  H01L27/12

CPC分类号： H01L27/3262 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/22 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/62 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.

公开(公告)号：US09754787B2

公开(公告)日：2017-09-05

申请号：US14313366

申请日：2014-06-24

申请人： Infineon Technologies AG

发明人： Johannes Laven ,  Hans-Joachim Schulze ,  Stephan Voss ,  Alexander Breymesser ,  Alexander Susiti ,  Shuhai Liu ,  Helmut Oefner

IPC分类号： H01L21/425 ,  H01L21/263 ,  H01L21/265 ,  H01L21/324 ,  H01L29/36 ,  H01L29/66 ,  H01L29/861 ,  H01L29/872 ,  H01L29/739 ,  H01L29/16 ,  H01L29/22

CPC分类号： H01L21/263 ,  H01L21/26506 ,  H01L21/3242 ,  H01L29/1608 ,  H01L29/2203 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

摘要： A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.

公开(公告)号：US09685593B2

公开(公告)日：2017-06-20

申请号：US15036465

申请日：2014-11-13

申请人： OSRAM Opto Semiconductors GmbH

发明人： Stephan Haslbeck ,  Martin Haushalter

IPC分类号： H01L29/22 ,  H01L33/48 ,  H01L33/62

CPC分类号： H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0033 ,  H01L2924/00014 ,  H01L2924/00

摘要： A housing for a semiconductor chip has a front side and a rear side opposite the front side, wherein the front side has a fastening area for the semiconductor chip; the rear side has a mounting area to mount the housing, wherein the mounting area runs obliquely to the fastening area; and the rear side has a resting area running parallel to the fastening area.

公开(公告)号：US09685556B2

公开(公告)日：2017-06-20

申请号：US15026406

申请日：2014-12-05

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Zhanfeng Cao ,  Zhen Liu ,  Feng Zhang ,  Qi Yao

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/78618 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor and a preparation method therefor, an array substrate and a display apparatus. The thin film transistor comprises an active layer (4), an etched barrier layer (5) disposed on the active layer (4), and a source and drain (6) disposed on the etched barrier layer (5). The source and drain (6) are disposed on a same layer in a spaced manner. First via holes (7) are formed in the etched barrier layer (5), second via holes (8) are formed in positions in the active layer (4) corresponding to the first via holes (7). The source and drain (6) are connected to the active layer (4) through the first via holes (7) formed in the etched barrier layer (5) and the second via holes (8) formed in the active layer (4). Because two second via holes are formed in the active layer, a design value L1 of the channel region length of the active layer is shortened and a metal oxide semiconductor array substrate with a narrow channel is formed and the charge rate is high, which helps to improve the display effect.

公开(公告)号：US20170162570A1

公开(公告)日：2017-06-08

申请号：US14956771

申请日：2015-12-02

申请人： Advanced Device Research Inc.

发明人： Chen-Wei Shih ,  Albert Chin

IPC分类号： H01L27/092 ,  H01L29/51 ,  H01L29/49 ,  H01L29/24 ,  H01L27/06 ,  H01L29/16 ,  H01L29/22 ,  H01L27/088 ,  H01L29/423

CPC分类号： H01L27/0922 ,  H01L21/28255 ,  H01L21/823807 ,  H01L21/8258 ,  H01L27/0883 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/16 ,  H01L29/22 ,  H01L29/24 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： A complementary transistor pair with an n-type enhancement-mode field effect transistor and a p-type field effect transistor is disclosed. The n-type enhancement-mode field effect transistor uses a metal oxide channel layer having a material selected from SnO2, ITO, ZnO, SnO2 and In2O3 while the p-type field effect transistor uses a germanium-containing channel layer.

公开(公告)号：US20170092772A1

公开(公告)日：2017-03-30

申请号：US15275795

申请日：2016-09-26

申请人： Industry-Academic Cooperation Foundation of Ajou University

发明人： Hyungtak SEO ,  Jin Seo KIM ,  Sang Yeon LEE

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： A method for controlling an electric conductivity of a metal oxide thin film is disclosed. The method may include forming a metal oxide thin film; applying thermal treatment to the metal oxide thin film; and irradiating UV (ultraviolet)-rays to the metal oxide thin film in an atmosphere containing water molecules and oxygen molecules. Thus, the hydrogen may be doped into the metal oxide thin film to improve the electric conductivity of the metal oxide thin film.

公开(公告)号：US09608186B2

公开(公告)日：2017-03-28

申请号：US14848250

申请日：2015-09-08

申请人： Seoul Viosys Co., Ltd.

发明人： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang

IPC分类号： H01L27/15 ,  H01L29/22 ,  H01L21/00 ,  H01L33/62 ,  H01L33/00 ,  H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50

CPC分类号： H01L33/24 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

摘要： Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.