公开(公告)号：US07122457B2

公开(公告)日：2006-10-17

申请号：US10840677

申请日：2004-05-07

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Naotaka Tanaka

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Naotaka Tanaka

IPC分类号： H01L21/44

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/11 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099

摘要： A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.

摘要翻译： 一种半导体芯片制造方法，包括以下步骤：在半导体衬底中形成前侧凹部; 在所述前侧凹部中沉积金属材料，以形成与形成在所述前表面上的功能元件电连接的前侧电极; 去除半导体衬底的后表面部分以将半导体衬底的厚度减小到大于前侧凹槽的深度的厚度; 在所述厚度减小步骤之后形成与所述半导体衬底的后表面中的所述前侧凹部连通的后侧凹部; 以及在后侧凹部中沉积金属材料，以形成与前侧电极电连接以形成贯通电极的后侧电极。

公开(公告)号：US20060033168A1

公开(公告)日：2006-02-16

申请号：US11182055

申请日：2005-07-15

申请人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

发明人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

IPC分类号： H01L29/76

CPC分类号： H01L21/76898 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/05548

摘要： This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.

摘要翻译： 本发明提供了通过简化制造工艺并提高半导体器件的产量来降低具有通孔电极的半导体器件的制造成本的制造方法。 第一绝缘膜形成在半导体衬底的顶表面上。 蚀刻第一绝缘膜的一部分以形成半导体衬底的一部分露出的开口。 然后在开口和第一绝缘膜上形成焊盘电极。 第二绝缘膜形成在半导体衬底的背面上。 然后形成具有比开口大的孔的通孔。 并且在通孔和第二绝缘膜上形成第三绝缘膜。 对通孔的底部的第三绝缘膜进行蚀刻以露出焊盘电极。 之后，在通孔中形成通孔电极和布线层。 最后，将半导体衬底切割并分离成多个半导体管芯。

公开(公告)号：US20050003576A1

公开(公告)日：2005-01-06

申请号：US10824639

申请日：2004-04-15

申请人： Mitsuo Umemoto ,  Kazumasa Tanida

发明人： Mitsuo Umemoto ,  Kazumasa Tanida

IPC分类号： H01L21/60 ,  H01L21/44 ,  H01L21/56 ,  H01L21/58

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a semiconductor device manufacturing method which can provide high reliability in electric connection between an electrode of a semiconductor chip and a substrate. Sealing resin is coated in a region of a substrate where a first electrode is not formed. A semiconductor chip formed with a second electrode on its end portion is prepared and disposed so as to face to a front surface of the substrate. The end portion of the semiconductor chip is pressed from its back surface by shifting a first movable plate downward to press the second electrode into contact with the first electrode. After then, a center portion of the semiconductor chip is pressed from its back surface by shifting a second movable plate downward to fill a space between the substrate and the semiconductor chip with the sealing resin.

摘要翻译： 本发明涉及一种半导体器件制造方法，其可以提供半导体芯片的电极与基板之间的电连接的高可靠性。 在不形成第一电极的基板的区域中涂布密封树脂。 制备在其端部上形成有第二电极的半导体芯片，并设置成面向基板的前表面。 半导体芯片的端部通过向下移动第一可动板而将第二电极与第一电极接触来从其背面按压。 然后，通过向下移动第二可移动板，用密封树脂填充基板和半导体芯片之间的空间，从其背面按压半导体芯片的中心部分。

公开(公告)号：US08609511B2

公开(公告)日：2013-12-17

申请号：US13220001

申请日：2011-08-29

申请人： Takashi Shirono ,  Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Tsuyoshi Matsumura

发明人： Takashi Shirono ,  Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Tsuyoshi Matsumura

IPC分类号： H01L21/46

CPC分类号： H01L27/14618 ,  H01L27/1464 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.

摘要翻译： 根据一个实施例，在第一基板的表面，背面和侧面上形成绝缘膜。 接下来，去除在第一基板的表面上形成的绝缘膜。 然后，在第一基板的表面上形成接合层，绝缘膜已经从该表面移除。 随后，第一基板经由接合层与第二基板接合。

公开(公告)号：US08404586B2

公开(公告)日：2013-03-26

申请号：US11635044

申请日：2006-12-07

申请人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

发明人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

IPC分类号： H01L21/44

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/1134 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid state device where a solid state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid state device side connection member.

摘要翻译： 半导体装置的制造方法包括：准备半导体芯片的步骤，该半导体芯片设置有形成在半导体基板的正面侧的功能元件，放置在贯通半导体基板的通孔内的馈通电极， 从前表面突出的前表面侧连接构件和在形成在后表面的凹部内具有接合表面的后表面侧连接构件; 制备固态器件的步骤，其中在一个表面上形成用于连接到前表面侧连接部件的固态器件侧连接部件; 并且通过保持半导体芯片的后表面并将前表面侧连接构件接合到固态器件侧连接构件，使半导体芯片的前表面面向固态器件的第一表面的接合步骤。

公开(公告)号：US08089163B2

公开(公告)日：2012-01-03

申请号：US11396797

申请日：2006-04-04

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05611 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166

摘要： A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成第一金属的阻挡掩模层的步骤，所述阻挡掩模层在其预定位置具有开口; 所述金属供给步骤将第二金属供给到所述阻挡掩模层的开口中，以形成所述第二金属的突起电极; 以及在金属供给步骤之后移除止动掩模层。

公开(公告)号：US20100213564A1

公开(公告)日：2010-08-26

申请号：US12556613

申请日：2009-09-10

申请人： Kazumasa Tanida ,  Hideo Numata ,  Eiji Takano

发明人： Kazumasa Tanida ,  Hideo Numata ,  Eiji Takano

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L24/13 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05686 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/04953 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A sensor chip includes: a semiconductor substrate that is provided with a light receiving portion on a main surface; a light transmissive member that is provided on the main surface of the semiconductor substrate, enclosing a hollow portion above the light receiving portion, to surround upper and periphery of the light receiving portion; and a light transmissive protective member that is provided on the light transmissive member.

摘要翻译： 传感器芯片包括：在主表面上设置有光接收部分的半导体衬底; 设置在半导体衬底的主表面上的光透射构件，其包围光接收部分上方的中空部分，以围绕光接收部分的上部和外围; 以及设置在透光构件上的透光保护构件。

公开(公告)号：US07456502B2

公开(公告)日：2008-11-25

申请号：US10593393

申请日：2005-08-04

申请人： Kazumasa Tanida ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/48

CPC分类号： H05K3/3452 ,  H01L23/49811 ,  H01L23/49866 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05559 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29109 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83385 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K2201/0989 ,  H05K2201/10674 ,  H05K2201/10977 ,  H01L2924/0132 ,  H01L2924/00 ,  H01L2224/05552

摘要： The invention provides a wiring board (2,15) to which a semiconductor chip (3) is to be bonded while directing a surface of the semiconductor chip toward the wiring board. The wiring board includes a connection electrode (14) that is formed on a bonding surface (2a, 15a) to which the semiconductor chip is to be bonded and that is used to make a connection with the semiconductor chip, an insulating film (6) that is formed on the bonding surface and that has an opening (6a) to expose the connection electrode, and a low-melting-point metallic part (16) that is provided on the connection electrode in the opening and that is made of a low-melting-point metallic material whose solidus temperature is lower than that of the connection electrode.

摘要翻译： 本发明提供了一种将半导体芯片的表面朝向布线板引导的要接合半导体芯片（3）的布线板（2,15）。 布线基板包括连接电极（14），其形成在要与半导体芯片接合的接合面（2a，15a）上并用于与半导体芯片连接的绝缘膜（14） 6），其形成在接合面上并具有露出连接电极的开口（6a）和设置在开口中的连接电极上的低熔点金属部分（16） 的固相线温度低于连接电极的低熔点金属材料。

公开(公告)号：US20080036043A1

公开(公告)日：2008-02-14

申请号：US11630162

申请日：2005-10-17

申请人： Kazumasa Tanida ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L29/06 ,  H05K7/00

CPC分类号： H01L23/49833 ,  H01L21/563 ,  H01L23/49805 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01078 ,  H05K3/0052 ,  H05K3/284 ,  H05K3/403 ,  H05K3/42 ,  H05K2201/0394 ,  H05K2201/09181 ,  H05K2203/1581 ,  H01L2924/00 ,  H01L2224/0401

摘要： A manufacture method for semiconductor device (1, 21) including: a sealing-resin-layer forming step of forming a sealing resin layer (7) on a conductive member (13) formed at lest on one surface of a base substrate (11) formed with a plurality of wiring boards (2) therein, the conductive member spanning a boundary between a respective pair of adjoining wiring boards; and a step of moving the base substrate and a cutting tool (B) relative to each other in a manner to allow the cutting tool to pass through the base substrate from the other surface (2b) opposite from the one surface thereof toward the one surface thereof, thereby cutting the base substrate along the boundary between the respective pair of adjoining wiring boards.

摘要翻译： 一种半导体器件（1,21）的制造方法，包括：密封树脂层形成步骤，在基底基板（11）的一个表面上形成的导电部件（13）上形成密封树脂层（7） 在其中形成有多个布线板（2），所述导电构件跨越相应的一对相邻布线板之间的边界; 以及相对于彼此移动所述基底基板和切割工具（B）的步骤，以允许所述切割工具从与所述基底基板和所述一个表面相对的另一个表面（2b）穿过所述基底基板， 从而沿着相邻的一对相邻布线板之间的边界切割基底基板。

公开(公告)号：US07253527B2

公开(公告)日：2007-08-07

申请号：US11518889

申请日：2006-09-12

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Naotaka Tanaka

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Naotaka Tanaka

IPC分类号： H01L23/48

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/11 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099

摘要： A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.