Abstract:
A halogen-free resin composition, a copper clad laminate using the same, and a printed circuit board using the same are introduced. The halogen-free resin composition comprising (A) 100 parts by weight of epoxy resin; (B) 3 to 15 parts by weight of diaminodiphenyl sulfone (DDS); and (C) 5 to 70 parts by weight of phenolic co-hardener. The halogen-free resin composition features specific ingredients and proportion to thereby achieve satisfactory maximum preservation period of the prepreg manufactured from the halogen-free resin composition, control the related manufacturing process better, and attain satisfactory laminate properties, such as a high degree of water resistance, a high degree of heat resistance, and satisfactory dielectric properties, and thus is suitable for producing a prepreg or a resin film to thereby be applicable to copper clad laminates and printed circuit boards.
Abstract:
An epoxy curative is provided comprising: a) a Lewis base, b) calcium nitrate, and c) a polyamine amide salt. The present disclosure additionally provides a composition which is a mixture obtained by mixing the epoxy curative and a curable epoxy resin. The present disclosure additionally provides cured compositions which result from cure of such a mixture.
Abstract:
A halogen-free resin composition includes (A) 100 parts by weight of epoxy resin; (B) 10 to 100 parts by weight of styrene-maleic anhydride (SMA) copolymer; and (C) 5 to 50 parts by weight of bisphenol S. The halogen-free resin composition includes specific ingredients, and is characterized by specific proportions thereof, to thereby achieve a high glass transition temperature, high heat resistance, and attractive appearance, and thus is suitable for producing a prepreg or resin film to thereby be applicable to copper clad laminates and printed circuit boards.
Abstract:
Disclosed herein are a resin composition of a printed circuit board including a liquid crystal oligomer, an epoxy resin, and a phenolic curing agent having five or more functional groups, an insulating film and a prepreg manufactured using the resin composition, and a printed circuit board including the insulating film or the prepreg. The resin composition for a printed circuit board according to the present invention, and the insulating film and the prepreg manufactured using the same, may have low coefficient of thermal expansion, excellent heat resistance property, and a high glass transition temperature.
Abstract:
A method for sealing electrodes on a semiconductor device using a sealing film which includes a resin layer having a flow within the range of 150 to 1800 μm at 80° C., or having a resin layer with a viscosity within the range of 10,000 to 100,000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement, and containing: (A) both (a1) a high-molecular-weight component including crosslinking functional groups and having a weight-average molecular weight of 100,000 or more and a Tg within the range of −50 to 50° C. and (a2) a thermosetting component including an epoxy resin as a main component, (B) a filler having an average particle size within the range of 1 to 30 μm, and (C) a colorant.
Abstract:
An aqueous electrodeposition coating composition comprising a cathodically electrodepositable binder, the binder comprising a phosphorylated resin and a carboxyl group separated by from 2 to 4 carbons from an ester group, provides corrosion protection equivalent to that obtained by the conventional phosphate pretreatment-electrodeposition coating process.
Abstract:
Disclosed is a resin composition for encapsulating a semiconductor containing an epoxy resin (A), a curing agent (B), and an inorganic filler (C), wherein the epoxy resin (A) includes an epoxy resin (A1) having a predetermined structure, and the curing agent (B) includes a phenol resin (B1) having a predetermined structure, wherein the content of a c=1 component included in the total amount of the phenol resin (B1) is not less than 40% in terms of area percentage and the content of a C≧4 component is not more than 20% in terms of area percentage, as measured by the area method of gel permeation chromatography. Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.
Abstract:
The problem of the present invention is to provide a chip-on-chip type semiconductor electronic component and a semiconductor device which can meet the requirements for further density increase of semiconductor integrated circuits.The present invention provides: a chip-on-chip type semiconductor electronic component in which a circuit surface of a first semiconductor chip and a circuit surface of a second semiconductor chip are opposed to each other, wherein the distance X between the first semiconductor chip and the second semiconductor chip is 50 μm or less, and the shortest distance Y between the side surface of the second semiconductor chip and the first external electrode is 1 mm or less; and a semiconductor device comprising the same.
Abstract:
Disclosed is a prepreg obtained by impregnating a woven fabric base with a thermosetting resin composition, wherein the thermosetting resin composition contains 80 to 200 volume parts of an inorganic filler per 100 volume parts of a thermosetting resin, and the inorganic filler contains (A) gibbsite aluminum hydroxide particles having an average particle diameter (D50) of 2 to 15 μm, (B) at least one inorganic component selected from the group consisting of boehmite particles having an average particle diameter (D50) of 2 to 15 μm and inorganic particles that have an average particle diameter (D50) of 2 to 15 μm and that contain crystal water having a release initiation temperature of 400° C. or higher or contain no crystal water, and (C) aluminum oxide particles having an average particle diameter (D50) of 1.5 μm or smaller, the compounded ratio (volume ratio) of the gibbsite aluminum hydroxide particles (A), the at least one inorganic component (B) selected from the group consisting of the boehmite particles and the inorganic particles, and the aluminum oxide particles (C) being 1:0.1 to 2.5:0.1 to 1.