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    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    61.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20160293381A1

    公开(公告)日：2016-10-06

    申请号：US15000374

    申请日：2016-01-19

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： Shogo OKITA ,  Atsushi HARIKAI ,  Noriyuki MATSUBARA

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32009 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/334 ,  H01L21/6833 ,  H01L21/68742

    摘要： A plasma processing apparatus includes: a reaction chamber; a stage which is disposed inside the reaction chamber and on which a conveyance carrier is mountable; an electrostatic chuck mechanism including an electrode portion that is disposed inside the stage; a support portion which supports the conveyance carrier between a stage-mounted position on the stage and a transfer position that is distant from the stage upward; and an elevation mechanism which elevates and lowers the support portion relative to the stage. In a case in which the conveyance carrier is mounted on the stage by lowering the support portion, the electrostatic chuck mechanism starts applying a voltage to the electrode portion before contact of an outer circumferential portion of a holding sheet which holds the conveyance carrier to the stage.

    摘要翻译： 一种等离子体处理装置，包括：反应室; 设置在反应室内的台架，输送载体可安装在该台上; 静电吸盘机构，其包括设置在所述台内部的电极部; 支撑部分，其在台架上的台安装位置和远离台架的传送位置之间支撑传送载体; 以及升降机构，其使支撑部相对于台升高并降低。 在通过降低支撑部分而将输送载体安装在载物架上的情况下，静电卡盘机构在将保持输送载体的保持片材的外周部分接触到台阶之前开始向电极部分施加电压 。

    PRELIMINARY TREATMENT METHOD FOR WORKPIECE
    63.
    发明申请
    PRELIMINARY TREATMENT METHOD FOR WORKPIECE 有权
    工作的初步处理方法

    公开(公告)号：US20160281237A1

    公开(公告)日：2016-09-29

    申请号：US14778309

    申请日：2014-05-30

    申请人： HONDA MOTOR CO., LTD.

    发明人： Koji Kobayashi ,  Junya Funatsu

    IPC分类号： C23C16/50 ,  C23C16/26 ,  C23C16/02

    CPC分类号： C23C16/50 ,  C23C16/02 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/26 ,  C23C16/455 ,  C23C16/515 ,  H01J37/32009

    摘要： Provided is a preliminary treatment method for a workpiece capable of shortening a cycle time by preventing a nodule from being formed on a carbon film. The preliminary treatment method for the workpiece is performed before a carbon film is formed on a surface of a workpiece W. A bias voltage is applied to the workpiece W disposed in a treatment space S maintained at a predetermined vacuum degree while an oxygen gas is supplied to the treatment space S before a material gas is supplied to the treatment space S, oxygen plasma is generated along the surface of the workpiece W, and oxygen, hydrogen, or water stuck to the surface of the workpiece W is removed.

    摘要翻译： 提供了能够通过防止在碳膜上形成结节来缩短循环时间的工件的预处理方法。 在将碳膜形成在工件W的表面之前进行工件的预处理方法。在供给氧气的同时，将设置在保持在规定的真空度的处理空间S中的工件W施加偏置电压 在将原料气体供给到处理空间S之前，向处理空间S施加氧化等离子体，沿着工件W的表面产生氧等离子体，除去附着在工件W表面的氧，氢或水。

    DRY ETCHING DEVICE AND DRY ETCHING METHOD
    66.
    发明申请
    DRY ETCHING DEVICE AND DRY ETCHING METHOD 审中-公开
    干蚀设备和干蚀刻方法

    公开(公告)号：US20160260586A1

    公开(公告)日：2016-09-08

    申请号：US14406694

    申请日：2014-06-03

    申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

    发明人： Li CHAI

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32449 ,  G02F1/1303 ,  H01J37/32009 ,  H01J37/32834 ,  H01J2237/334

    摘要： The present disclosure disclosed a dry etching device, comprising an etching cavity; a gas extraction system arranged on the bottom of the etching cavity, wherein, the system includes a gas passage, a gas extractor; controllable valves, each mounted on a respective gas inlet. The present disclosure disclosed a dry etching method, including the steps of: placing a workpiece to be etched on a base platform in an etching cavity; selecting a gas extraction mode from a group consisting of a circulatory working mode and a non-circulatory working mode according to procedures to be performed; performing a dry etching procedure while extracting gas under the circulatory mode or non-circulatory mode. The device can improve the uniformity of the dry etching process and the substrate to be manufactured, thus increase the quality of the product. In addition, the restriction to the design of the product due to the considerations of the uniformity can be reduced, and thus enlarge the room for designing the products.

    摘要翻译： 本公开公开了一种干蚀刻装置，包括蚀刻腔; 设置在蚀刻腔的底部的气体提取系统，其中，所述系统包括气体通道，气体提取器; 可控阀，每个安装在相应的气体入口上。 本公开公开了一种干蚀刻方法，包括以下步骤：将待蚀刻的工件放置在蚀刻腔中的基座上; 根据要执行的程序从循环工作模式和非循环工作模式组成的组中选择气体提取模式; 在循环模式或非循环模式下提取气体的同时执行干蚀刻过程。 该装置可以提高干蚀刻工艺和待制造的基板的均匀性，从而提高产品的质量。 此外，由于考虑均匀性而对产品的设计的限制可以减少，从而扩大了产品设计的空间。

    Isotropic atomic layer etch for silicon oxides using no activation
    68.
    发明授权
    Isotropic atomic layer etch for silicon oxides using no activation 有权
    使用无活化的氧化硅的各向同性原子层蚀刻

    公开(公告)号：US09425041B2

    公开(公告)日：2016-08-23

    申请号：US14590801

    申请日：2015-01-06

    申请人： Lam Research Corporation

    发明人： Ivan L. Berry, III ,  Pilyeon Park ,  Faisal Yaqoob

    IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/311

    CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/02252 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144

    摘要： Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of NO activation of an oxide surface. Once activated, a fluorine-containing gas or vapor etches the activated surface. Etching is self-limiting as once the activated surface is removed, etching stops since the fluorine species does not spontaneously react with the un-activated oxide surface. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where accurate removal of one or multiple atomic layers of material is desired.

    摘要翻译： 提供了以原子级保真度控制各向同性蚀刻氧化硅和氧化锗层的方法。 该方法利用氧化物表面的NO活化。 一旦活化，含氟气体或气体会蚀刻活化表面。 蚀刻是自限制的，因为一旦活化表面被去除，则蚀刻停止，因为氟物质不会与未活化的氧化物表面自发反应。 这些方法可以用于互连预清洁应用，栅极介质处理，存储器件的制造或其中期望精确去除一个或多个原子层材料的任何其它应用。