公开(公告)号：US09461195B2

公开(公告)日：2016-10-04

申请号：US14380591

申请日：2013-02-22

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： Jens Dirk Moschner ,  Henning Nagel ,  Agata Lachowicz ,  Markus Fiedler

IPC分类号： H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/1868 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/1804 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the surface of the substrate and an antireflection layer applied to the silicon oxide layer, which antireflection layer is deposited onto the dielectric passivation layer in a process chamber. According to the invention, in order to achieve a stability of corresponding solar cells or solar cell modules produced therefrom against a potential induced degradation (PID), the dielectric passivation layer is formed from the surface of the substrate in the process chamber by means of a plasma containing an oxidizing gas.

摘要翻译： 本发明涉及一种太阳能电池的制造方法，该太阳能电池具有由硅构成的基板，该基板具有存在于基板表面上的氧化硅层和涂敷在该氧化硅层上的防反射层，该防反射层被沉积到 介质钝化层在处理室中。 根据本发明，为了实现由此而产生的对应的太阳能电池或太阳能电池模块相对于潜在的感应劣化（PID）的稳定性，介电钝化层由处理室中的基板的表面借助于 含有氧化气体的等离子体。

公开(公告)号：US20160284916A1

公开(公告)日：2016-09-29

申请号：US15179682

申请日：2016-06-10

申请人： International Business Machines Corporation

发明人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/074 ,  H01L31/036 ,  H01L31/0336 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0236

CPC分类号： H01L31/074 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/26513 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/0336 ,  H01L31/036 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1852 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/544

摘要： A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

公开(公告)号：US20160268456A1

公开(公告)日：2016-09-15

申请号：US15161597

申请日：2016-05-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Tzu-Huan CHENG ,  Chia-Hung TSAI

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/0216

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/0749 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/541 ,  Y02P70/521

摘要： A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacers. The absorber layer is partially in contact with the spacers and partially in direct contact with the back contact layer. The solar cell substrate is heated to form voids between the absorber layer and the back contact layer at the locations of the spacers.

公开(公告)号：US20160247945A1

公开(公告)日：2016-08-25

申请号：US15024587

申请日：2014-09-23

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： Julia Kumm ,  Hassan Samadi ,  Winfried Wolke ,  Philip Hartmann ,  Andreas Wolf ,  Daniel Biro

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/02008 ,  H01L31/18 ,  H01L31/1868

摘要： The invention relates to a method for producing a metallic contact-connection of a photovoltaic solar cell, including the following method steps: A providing a semiconductor substrate, and B applying an aluminum-containing contact-connection layer indirectly or directly to a side of the semiconductor substrate. The invention is characterized in that in a method step C, a diffusion barrier layer, which acts as a diffusion barrier at least with respect to aluminum, is applied indirectly or directly to the contact-connection layer, and in a method step D, a solderable layer comprised of a solderable material is applied indirectly or directly to the diffusion barrier layer, and in that the diffusion barrier layer and the contact-connection layer are applied by a PVD method.

摘要翻译： 本发明涉及一种用于制造光伏太阳能电池的金属接触连接的方法，包括以下方法步骤：提供半导体衬底;以及B间接地或直接地将含铝的接触连接层施加到 半导体衬底。 本发明的特征在于，在方法步骤C中，间接地或直接地将至少相对于铝充当扩散阻挡层的扩散阻挡层施加到接触连接层，并且在方法步骤D中， 由可焊接材料构成的可焊层间接或直接施加到扩散阻挡层，并且通过PVD法施加扩散阻挡层和接触连接层。

公开(公告)号：US09406834B2

公开(公告)日：2016-08-02

申请号：US14269152

申请日：2014-05-04

申请人： HITACHI CHEMICAL COMPANY, LTD.

发明人： Akihiro Orita ,  Masato Yoshida ,  Takeshi Nojiri ,  Yoichi Machii ,  Mitsunori Iwamuro ,  Shuichiro Adachi ,  Tetsuya Sato ,  Toru Tanaka

IPC分类号： H01L35/24 ,  H01L31/18 ,  C08K3/22 ,  C08K5/05 ,  H01L23/29 ,  H01L23/31 ,  H01L31/0216 ,  H01L31/068 ,  C09D127/18 ,  H01L21/02 ,  H01L21/306 ,  C08J5/24 ,  C08K3/28 ,  C08K3/34 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/05 ,  H01L51/50

CPC分类号： H01L31/1868 ,  B82Y10/00 ,  C08J5/24 ,  C08J2363/00 ,  C08J2425/08 ,  C08J2433/24 ,  C08K3/22 ,  C08K3/28 ,  C08K3/34 ,  C08K5/05 ,  C09D127/18 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/30604 ,  H01L23/293 ,  H01L23/3171 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/1804 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5012 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

摘要翻译： 本发明提供一种用于形成用于半导体衬底的钝化膜的材料。 该材料包括具有阴离子基团或阳离子基团的高分子化合物。

公开(公告)号：US09373743B2

公开(公告)日：2016-06-21

申请号：US14662597

申请日：2015-03-19

申请人： International Business Machines Corporation

发明人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/18 ,  H01L31/0336 ,  H01L31/074 ,  H01L31/0304 ,  H01L31/072 ,  H01L31/036 ,  H01L31/0236

CPC分类号： H01L31/074 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/26513 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/0336 ,  H01L31/036 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1852 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/544

摘要： A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

公开(公告)号：US09373731B2

公开(公告)日：2016-06-21

申请号：US14128465

申请日：2012-06-28

申请人： Alison Joan Lennon ,  Zhongtian Li ,  Stuart Ross Wenham ,  Pei Hsuan Lu

发明人： Alison Joan Lennon ,  Zhongtian Li ,  Stuart Ross Wenham ,  Pei Hsuan Lu

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L21/225 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/056

CPC分类号： H01L31/022441 ,  H01L21/2254 ,  H01L31/02168 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/1868 ,  H01L31/188 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A dielectric, structure and a method of forming a dielectric structure for a rear surface of a silicon solar cell are provided. The method comprises forming a first dielectric layer over the rear surface of the silicon solar cell, and then depositing a layer of metal such as aluminum over the first dielectric layer. The metal layer is then anodized to form a porous layer and a material layer is deposited over a surface of the porous layer such that the material deposits on the surface of the porous layer without contacting the silicon surface.

摘要翻译： 提供了形成用于硅太阳能电池的后表面的电介质结构的电介质，结构和方法。 该方法包括在硅太阳能电池的后表面上形成第一介电层，然后在第一介电层上沉积诸如铝的金属层。 然后阳极氧化金属层以形成多孔层，并且材料层沉积在多孔层的表面上，使得材料沉积在多孔层的表面上而不与硅表面接触。

公开(公告)号：US20160148959A1

公开(公告)日：2016-05-26

申请号：US14950902

申请日：2015-11-24

申请人： Artilux, Inc

发明人： Szu-Lin Cheng ,  Shu-Lu Chen

IPC分类号： H01L27/144 ,  H01L21/8234 ,  H01L23/535 ,  H01L31/028 ,  H01L31/0216 ,  H01L29/78 ,  H01L31/105 ,  H01L31/18 ,  H01L21/02

CPC分类号： H01L31/02019 ,  H01L21/70 ,  H01L21/77 ,  H01L21/823475 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/1443 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/0657 ,  H01L29/78 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01L31/1808 ,  H01L31/1868 ,  H01L31/1876

摘要： Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

摘要翻译： 这里介绍的各种技术的示例包括但不限于在浅沟槽隔离形成期间的台面高度调节方法，通过第一种方法的晶体管和多吸收层方法。 如下面进一步描述的，本文介绍的技术包括可以单独地和/或共同地解决或减轻在相同衬底上制造PD和晶体管所涉及的一个或多个传统限制的各种方面，例如上述可靠性，性能和过程 温度问题。

公开(公告)号：US20160141329A1

公开(公告)日：2016-05-19

申请号：US14940572

申请日：2015-11-13

申请人： Artilux Inc.

发明人： Szu-Lin CHENG ,  Han-Din LIU ,  Shu-Lu CHEN

IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/036 ,  H01L31/18 ,  H01L31/105

CPC分类号： H01L27/14685 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1469 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/036 ,  H01L31/105 ,  H01L31/18 ,  H01L31/1808 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.

摘要翻译： 光吸收装置包括基板，位于第一选区上的基板上方的光吸收层，光吸收层上方的硅层，围绕光吸收层的侧壁的至少一部分的隔离物， 至少部分间隔物，其中光吸收装置可实现高带宽和低暗电流。

公开(公告)号：US09340678B2

公开(公告)日：2016-05-17

申请号：US13703592

申请日：2011-06-14

申请人： Douglas A. Keszler ,  Wei Wang

发明人： Douglas A. Keszler ,  Wei Wang

IPC分类号： B05D5/12 ,  C09D1/00 ,  H01L31/0216 ,  H01L31/18 ,  C23C18/12

CPC分类号： C09D1/00 ,  C23C18/1216 ,  C23C18/1245 ,  C23C18/1283 ,  H01L31/02168 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： One disclosed embodiment concerns an aqueous inorganic coating precursor solution comprising a mixture of water, polynuclear aluminum hydroxide cations, and polyatomic ligands selected from nitrate (NO3−), nitrite (NO2−), or combinations thereof. In certain embodiments, the composition has a molar concentration ratio of polyatomic ligands to aluminum of less than 3; an aluminum cation concentration of from about 0.01 M to about 3.5 M; and/or a polyatomic anion concentration of from about 0.1 to about 2.5 times the aluminum cation concentration. Embodiments of a method for forming the precursor solution also are disclosed. For example, certain embodiments comprise adding a metal having a sufficient reduction potential to reduce nitric acid to an aqueous solution comprising aluminum nitrate (Al(NO3)3).

摘要翻译： 一个公开的实施方案涉及包含水，多核氢氧化铝阳离子和选自硝酸盐（NO 3 - ），亚硝酸盐（NO 2 - ）或其组合）的多原子配体的混合物的水性无机涂层前体溶液。 在某些实施方案中，组合物的多原子配体与铝的摩尔浓度比小于3; 铝阳离子浓度为约0.01M至约3.5M; 和/或多原子阴离子浓度为铝阳离子浓度的约0.1至约2.5倍。 还公开了用于形成前体溶液的方法的实施方案。 例如，某些实施方案包括加入具有足够还原电位的金属以将硝酸还原成包含硝酸铝（Al（NO 3）3）的水溶液）。