Abstract:
The invention provides multilayer circuit boards and methods for formation of a sequential build circuit board. Among other things, glass fiber reinforced copper clad epoxy substrates, required to provide strength or rigidity to prior boards, are not required for preferred circuit boards of the invention. Preferred methods of the invention include applying a dielectric coating onto a support; forming recesses in the dielectric coating that define openings including opening for at least one reinforcing member; depositing copper metal into the recesses to form a first layer; applying a second dielectric coating onto the first circuit layer; forming recesses in the second dielectric coating that define openings including openings for at least one reinforcing member in registration with the one or more reinforcing members in the first layer; depositing metal into the recesses in the dielectric coating to form the second layer; and repeating the process to form sequential build board having the desired number of layers.
Abstract:
An electronic device and method of making same wherein the device includes a substrate (e.g., a printed wiring board or semiconductor chip) having a circuit thereon, a first non-photosensitive layer (e.g., polyimide resin) positioned on the substrate and over the substrate's circuit, a second, photosensitive layer (e.g., epoxy resin) positioned on the first layer, and an electrically conductive layer positioned on the first, non-photosensitive layer and electrically coupled to the circuit through a hole in the first layer.
Abstract:
The invention relates to a process for the metallization of an insulator and/or a dielectric, wherein the insulator is firstly activated, it is subsequently coated with another insulator and the latter is patterned, then the first is seeded and lastly metallized.
Abstract:
The invention relates to a method for production of three-dimensionally arranged conducting and connecting structures for volumetric and energy flows. Various light-setting materials are used for the production of the layers. Upon exchanging the materials, those layer regions in which no setting occurred during the preceding setting process, are also filled with new material, such that, in the subsequent setting process, not only is the upper layer linked to the one lying directly beneath it, but also material of the upper layer is connected to the material of a layer lying below the penultimate layer. It is thus possible, within the layer sequence, to connect a structure with varying properties from layer to layer.
Abstract:
A printed circuit board has a layer including a resin material, which has a tensile breaking strain of approximately 1% or more at a tensile strain rate of 40%/sec at 25° C., and an Izod impact strength of approximately 1 kgf·cm/cm or more at 25° C. Otherwise, the resin material has a peak value of dynamic loss tangent of 0.05 or more in a range of −100° C. to −50° C. by &bgr; relaxation, and a peak value of dynamic loss tangent of 0.02 or more in a range of 0° C. to 100° C. by &bgr;′ relaxation in a dynamic viscoelasticity spectral measurement. Accordingly, thermal shock resistance and drop shock resistance of the printed circuit board can be improved.
Abstract translation:印刷电路板具有包括树脂材料的层,其在25℃的拉伸应变速率为40%/秒,拉伸断裂应变为约1%以上,艾佐德冲击强度为约1kgf。 cm 2以上,另外,通过β弛豫,树脂材料在-100℃〜-50℃的范围内具有0.05以上的动态损耗角正切峰值,峰值 在动态粘弹性光谱测量中通过β'松弛在0℃至100℃的范围内的0.02或更大的动态损耗角正切。 因此,可以提高印刷电路板的耐热冲击性和耐跌落冲击性。
Abstract:
A method of utilizing electroless copper deposition to form interconnects on a semiconductor wafer. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is blanket deposited. Then, a contact displacement technique is used to form a thin activation seed layer of copper on the barrier layer. An electroless deposition technique is then used to auto-catalytically deposit copper on the activated barrier layer. The electroless copper deposition continues until the via/trench is filled. Subsequently, the surface is polished by an application of chemical-mechanical polishing (CMP) to remove excess copper and barrier material from the surface, so that the only copper and barrier material remaining are in the via/trench openings. Then an overlying silicon nitride (SiN) layer is formed above the exposed copper in order to form a dielectric barrier layer. The copper interconnect is fully encapsulated from the adjacent material by the TiN (or Ta) and the SiN layers.
Abstract:
This invention relates to an interconnection structure comprising one or more insulating films and one or more layers of conductor electrode patterns, wherein at least one of the insulating films consists of a fluorene skeleton-containing epoxy acrylate resin, and to a method of making a multilayer interconnection structure including the steps of roughening the surface of an insulating resin layer and forming a conductor thereon by electroless plating, wherein the average roughness (Ra), maximum roughness (Ry) and conductor thickness (T) of the roughened surface of the insulating resin layer satisfy the following relations: 0.2.ltoreq.Ra.ltoreq.0.6 (unit: .mu.m) (1) 0.02.ltoreq.Ra/T.ltoreq.0.2 (2) 0.05.ltoreq.Ry/T.ltoreq.0.5 (3) and catalyst nuclei for electroless plating are supplied by applying a solution of a metallic salt to the roughened surface of the insulating resin layer or dipping the substrate in a solution of a metallic salt, drying and heat-treating the substrate, and then subjecting it to displacement palladium plating.
Abstract translation:本发明涉及一种互连结构,其包括一个或多个绝缘膜和一层或多层导体电极图案,其中绝缘膜中的至少一层由含芴骨架的环氧丙烯酸酯树脂组成,以及制备多层 互连结构,包括通过无电解电镀使绝缘树脂层的表面粗糙化并在其上形成导体的步骤,其中绝缘树脂的粗糙表面的平均粗糙度(Ra),最大粗糙度(Ry)和导体厚度(T) 层满足以下关系:0.2 = Ra = 0.6(单位:μm)(1)0.02 = Ra / T <= 0.2(2)0.05 Ry / T < 3)和用于无电镀的催化剂核通过将金属盐溶液施加到绝缘树脂层的粗糙表面上或将基板浸入金属盐溶液中,干燥和热处理基板,然后对其进行 它到位移球 镀锡。
Abstract:
An adhesive for electroless plating is formed by dispersing particular heat-resistant granules easily soluble in an oxidizing agent into a particular heat-resistant resin sparingly soluble in the oxidizing agent through a curing treatment. A printed circuit board is manufactured by using such an adhesive.
Abstract:
A High-Density-Multi-Chip (HDMI) substrate structure (10) includes alternating conductor metallization (24,28,36,54,56) and insulating dielectric layers (14,38). The dielectric layers (14,38) are formed by curtain coating of ultraviolet photoimageable epoxy material, and the metallization (24,28,36,54,56) is formed by electroless plating or sputtering of copper. The dielectric layers (14,38) are photoimaged and developed to form via holes (16,40,44), and vias (18,42,46) are formed in the holes (16,40,44) by electroless copper plating. The metallization (24,28,36,54,56) can be formed in the same manner as the dielectric layers (14,38), or can alternatively be formed by subtractive photolithography using photoresist masks.
Abstract:
A method of selectively seeding or activating metal interconnections patterned on polyimide dielectric surfaces using an aqueous solution of palladium sulfate, palladium perchlorate, palladium trifluoromethane sulfonate, palladium nitrate or other palladium salts having poorly coordinating counter ions. This strongly selective seeding and the corresponding ability to reliably remove all traces of the seeding material from the polyimide surface eliminates shorting, bridging and reduction of breakdown voltage during electroless plating of a thin layer of nickel or cobalt.