Dual wafer spin coating
    71.
    发明授权
    Dual wafer spin coating 有权
    双晶圆片旋涂

    公开(公告)号:US08512491B2

    公开(公告)日:2013-08-20

    申请号:US12974611

    申请日:2010-12-21

    IPC分类号: B32B41/00

    CPC分类号: H01L22/12 H01L21/67092

    摘要: A method of bonding a first substrate and a second substrate includes the steps of rotating first substrate with an adhesive mass thereon, and second substrate contacting the mass and overlying the first substrate, controlling a vertical height of a heated control platen spaced apart from and not contacting the second substrate so as to control a temperature of the adhesive mass, so as to at least one of bond the first and second substrates in alignment with one another, or achieve a sufficiently planar adhesive interface between the first and second substrates.

    摘要翻译: 接合第一基板和第二基板的方法包括以下步骤:使第一基板与其上的粘合剂质量物质旋转,第二基板接触物料并覆盖第一基板,控制加热的控制台板的垂直高度, 使所述第二基板接触以控制所述粘合剂物料的温度,以便使所述第一和第二基板彼此对准的至少一个接合,或在所述第一和第二基板之间实现足够平坦的粘合界面。

    LOW CTE INTERPOSER
    80.
    发明申请

    公开(公告)号:US20130063918A1

    公开(公告)日:2013-03-14

    申请号:US13232436

    申请日:2011-09-14

    摘要: An interconnection component includes a first support portion has a plurality of first conductive vias extending therethrough substantially perpendicular to surfaces thereof such that each via has a first end adjacent a first surface and a second end adjacent a second surface. A second support portion has a plurality of second conductive vias extending therethrough substantially perpendicular to surfaces thereof such that each via has a first end adjacent the first surface and a second end adjacent the second surface. A redistribution layer is disposed between the second surfaces of the first and second support portions, electrically connecting at least some of the first vias with at least some of the second vias. The first and second support portions can have a coefficient of thermal expansion (“CTE”) of less than 12 parts per million per degree, Celsius (“ppm/° C.”).

    摘要翻译: 互连部件包括第一支撑部分,其具有大致垂直于其表面延伸的多个第一导电通孔,使得每个通孔具有邻近第一表面的第一端和邻近第二表面的第二端。 第二支撑部分具有大致垂直于其表面延伸穿过的多个第二导电通路,使得每个通孔具有邻近第一表面的第一端和邻近第二表面的第二端。 再分配层设置在第一和第二支撑部分的第二表面之间,将至少一些第一通孔与至少一些第二通孔电连接。 第一和第二支撑部分的热膨胀系数(CTE)可以低于每百万摄氏度(ppm /℃)的百万分之十二。