公开(公告)号：US20100037990A1

公开(公告)日：2010-02-18

申请号：US12606080

申请日：2009-10-26

申请人： Daewoong Suh

发明人： Daewoong Suh

IPC分类号： B23K35/22

CPC分类号： B23K1/0016 ,  C22C45/00 ,  H05K3/3463 ,  H05K3/3494

摘要： High strength, reliable bulk metallic glass (BMG) solder materials formed from alloys possessing deep eutectics with asymmetric liquidous slopes. BMG solder materials are stronger and have a higher elastic modulus than, and therefore are less likely than crystalline solder materials to damage fragile low k interlayer dielectric (ILD) materials due to thermal stress in materials with different coefficients of thermal expansion (CTE).BMG solder materials may physically, electrically, or thermally couple a feature to another feature, or any combination thereof. For example, in an embodiment of the invention, a BMG solder material may physically and electrically couple an electronic component to a printed circuit board. In another embodiment of the invention, a BMG solder material may physically and thermally couple an integrated heat sink to a semiconductor device.

摘要翻译： 高强度，可靠的大块金属玻璃（BMG）焊料，由具有非对称液相斜率的深共晶体的合金形成。 BMG焊料材料比其材料具有不同的热膨胀系数（CTE）时的热应力更强，具有更高的弹性模量，因此不太可能结晶焊料材料损坏脆性低k层间电介质（ILD）材料。 BMG焊料可以物理，电或热耦合特征到另一特征，或其任何组合。 例如，在本发明的一个实施例中，BMG焊料材料可以将电子部件物理和电耦合到印刷电路板。 在本发明的另一个实施例中，BMG焊料材料可以将集成散热器物理和热耦合到半导体器件。

公开(公告)号：US20100035021A1

公开(公告)日：2010-02-11

申请号：US12461268

申请日：2009-08-05

申请人： Chiho Ogihara

发明人： Chiho Ogihara

IPC分类号： B32B3/10 ,  B32B7/02 ,  B23K31/02 ,  B23K31/12

CPC分类号： B23K1/0016 ,  B23K3/0607 ,  B23K2101/42 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H05K1/0269 ,  H05K3/3436 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/09781 ,  H05K2203/0278 ,  H05K2203/043 ,  H05K2203/0465 ,  Y10T29/4913 ,  Y10T428/24331 ,  Y10T428/2495 ,  H01L2224/0401

摘要： A substrate includes a base material, a first solder part disposed on a surface of the base material and used for connection to an electronic component, and a second solder part disposed on the surface of the base material and made of the same solder as that of the first solder part. The top surface of the first solder part is made to be a flat surface, and the maximum height of the second solder part from the surface of the base material is lower than the height of the flat surface of the first solder part from the surface of the base material. Thus, a substrate for which the kind of solder can be determined easily and with certainty, a device provided with this substrate, a method of manufacturing the substrate, and a determining method are provided.

摘要翻译： 基板包括基材，设置在基材的表面上并用于连接到电子部件的第一焊料部分和设置在基材表​​面上并由与第二焊料相同的焊料制成的第二焊料部分 第一个焊接部分。 第一焊料部分的顶表面被制成平坦表面，并且第二焊料部分从基材表面的最大高度低于第一焊料部分的平坦表面的高度， 基材。 因此，提供了一种可以容易且可靠地确定焊料种类的衬底，设置有该衬底的器件，制造衬底的方法和确定方法。

公开(公告)号：US07659614B2

公开(公告)日：2010-02-09

申请号：US12116916

申请日：2008-05-07

申请人： Vivek Mehrotra

发明人： Vivek Mehrotra

IPC分类号： H01L23/12

CPC分类号： H05K3/3463 ,  H01L23/3735 ,  H01L23/4924 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3651 ,  H05K1/0306 ,  H05K2203/0278 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012

摘要： A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.

摘要翻译： 一种形成包含SiC或其他半导体器件的封装的方法，其利用瞬态液相（TLP）接合结合到其它部件或导电表面，以使用导电金属的原位形成的三元或四元混合物和使用TLP产生的器件产生高温熔点键 三元或四元材料的键。 组合物满足互连或接头的相互冲突的要求，其可以暴露于高温下，并且在导热，导电，空隙和抗蠕变性，耐腐蚀性以及在温度和功率循环方面是可靠的。

公开(公告)号：US20090304545A1

公开(公告)日：2009-12-10

申请号：US12281430

申请日：2007-03-08

申请人： Masamoto Tanaka ,  Tsutomu Sasaki ,  Takayuki Kobayashi ,  Kazuto Kawakami ,  Masayoshi Fujishima

发明人： Masamoto Tanaka ,  Tsutomu Sasaki ,  Takayuki Kobayashi ,  Kazuto Kawakami ,  Masayoshi Fujishima

IPC分类号： C22C13/02 ,  C22C13/00

CPC分类号： C22C13/00 ,  B23K35/26 ,  B23K35/262 ,  H05K3/3463

摘要： A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

摘要翻译： 在耐冲击性和抗振性方面表现出良好性能的无铅焊料合金。 还提供了使用这种无铅焊料合金的焊球，以及使用这种无铅合金的具有焊锡凸块的电子部件。 具体地说，无铅焊料合金由1.0〜2.0质量％的Ag，0.3〜1.0质量％的Cu，0.005〜0.1质量％的Ni组成，余量包含Sn和不可避免的杂质。 在Cu电极上的Sn-Ag-Cu基焊料部中，在Cu电极上直接形成Cu 3 Sn金属间化合物层，然后在其上形成Cu6Sn5金属间化合物层。 Cu6Sn5金属间化合物层中的Cu原子位置被原子半径小于Cu的Ni代替，从而减小Cu6Sn5金属间化合物层的应变，从而可以提高耐冲击性和抗振性。

公开(公告)号：US07626274B2

公开(公告)日：2009-12-01

申请号：US11346728

申请日：2006-02-03

申请人： Masazumi Amagai

发明人： Masazumi Amagai

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/40

CPC分类号： H01L23/3128 ,  B23K35/262 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13021 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/81447 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/351 ,  H05K3/244 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/10992 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01047 ,  H01L2924/01028 ,  H01L2924/01027

摘要： A semiconductor device with an improved solder joint system is described. The solder system includes two copper contact pads connected by a body of solder and the solder is an alloy including tin, silver, and at least one metal from the transition groups IIIA, IVA, VA, VIA, VIIA, and VIIIA of the Periodic Table of the Elements. The solder joint system also includes, between the pads and the solder, layers of intermetallic compounds, which include grains of copper and tin compounds and copper, silver, and tin compounds. The compounds contain the transition metals. The inclusion of the transition metals in the compound grains reduce the compound grains size and prevent grain size increases after the solder joint undergoes repeated solid/liquid/solid cycles.

摘要翻译： 描述了具有改进的焊点系统的半导体器件。 焊料系统包括通过焊料体连接的两个铜接触焊盘，焊料是包含锡，银以及来自周期表的过渡族IIIA，IVA，VA，VIA，VIIA和VIIIA中的至少一种金属的合金 的元素。 焊点系统还在焊盘和焊料之间包括金属间化合物层，其包括铜和锡化合物的晶粒以及铜，银和锡化合物。 化合物含有过渡金属。 过渡金属在复合晶粒中的包含减少了复合晶粒尺寸，并防止了焊点经历重复的固/液/固体循环之后的晶粒尺寸增加。

公开(公告)号：US07626273B2

公开(公告)日：2009-12-01

申请号：US12356432

申请日：2009-01-20

申请人： Julian Partridge ,  James W. Cady ,  James Wilder ,  David L. Roper ,  James Douglas Wehrly, Jr.

发明人： Julian Partridge ,  James W. Cady ,  James Wilder ,  David L. Roper ,  James Douglas Wehrly, Jr.

IPC分类号： H01L23/538

CPC分类号： H01L25/0657 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L23/5387 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/105 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/16237 ,  H01L2224/73253 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06579 ,  H01L2225/06586 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/3011 ,  H05K1/141 ,  H05K1/147 ,  H05K1/189 ,  H05K3/3463 ,  H05K3/363 ,  H05K2201/056 ,  H05K2201/10689 ,  H05K2201/10734 ,  H01L2924/00

摘要： The present invention provides a system and method that mounts integrated circuit devices onto substrates and a system and method for employing the method in stacked modules. The contact pads of a packaged integrated circuit device are substantially exposed. A solder paste that includes higher temperature solder paste alloy is applied to a substrate or to the integrated circuit device to be mounted. The integrated circuit device is positioned to contact the contacts of the substrate. Heat is applied to create high temperature joints between the contacts of the substrate and the integrated circuit device resulting in a device-substrate assembly with high temperature joints. The formed joints are less subject to re-melting in subsequent processing steps. The method may be employed in devising stacked module constructions such as those disclosed herein as preferred embodiments in accordance with the invention. Typically, the created joints are low in profile.

摘要翻译： 本发明提供了一种将集成电路器件安装到衬底上的系统和方法，以及用于将堆叠模块中采用该方法的系统和方法。 封装的集成电路器件的接触焊盘基本上露出。 将包括较高温度的焊膏合金的焊膏施加到要安装的基板或集成电路器件上。 集成电路器件定位成与衬底的触点接触。 施加热量以在基板的触点和集成电路装置之间形成高温接头，从而形成具有高温接头的装置 - 基板组件。 形成的接头在随后的加工步骤中较少受到再熔化。 该方法可以用于设计堆叠的模块结构，例如根据本发明的优选实施例中公开的那些。 通常，创建的关节的轮廓较低。

公开(公告)号：US07621762B2

公开(公告)日：2009-11-24

申请号：US12156059

申请日：2008-05-28

申请人： Been-Yang Liaw

发明人： Been-Yang Liaw

IPC分类号： H01R12/00 ,  H05K1/00

CPC分类号： H05K3/3436 ,  B23K35/02 ,  B23K35/0244 ,  B23K35/262 ,  H05K3/3426 ,  H05K3/3463 ,  H05K2201/09136 ,  H05K2201/10234 ,  H05K2203/041 ,  Y02P70/613

摘要： A solder ball is adapted for a ball grid array socket and comprises a core portion (1) and a layer (2) of solder alloy coated an outer surface of the core portion. The core portion is consisting of tin essentially, and the layer of solder alloy contains at least two metal materials.

摘要翻译： 焊球适用于球栅阵列插座，并且包括芯部分（1）和涂覆有芯部分的外表面的焊料合金层（2）。 核心部分由锡组成，焊料合金层含有至少两种金属材料。

公开(公告)号：US20090197114A1

公开(公告)日：2009-08-06

申请号：US12254790

申请日：2008-10-20

申请人： Da-Yuan Shih ,  Donald W. Henderson ,  Sung K. Kang ,  Minhua Lu ,  Jae-Woong Nah ,  Kamalesh Srivastava

发明人： Da-Yuan Shih ,  Donald W. Henderson ,  Sung K. Kang ,  Minhua Lu ,  Jae-Woong Nah ,  Kamalesh Srivastava

IPC分类号： B32B15/01 ,  B23K1/20

CPC分类号： B23K1/008 ,  B23K1/0016 ,  B23K1/203 ,  B23K2101/42 ,  C22C13/00 ,  H01L2224/16225 ,  H05K3/3463 ,  Y10T428/12708 ,  Y10T428/12715

摘要： A solder joint comprising a solder capture pad on a substrate having a circuit; and a lead free solder selected from the group comprising Sn—Ag—Cu solder and Sn—Ag solder adhered to the solder capture pad; the solder selected from the group comprising between 0.1 to 2.0% by weight Sb or Bi, and 0.5 to 3.0% Ag. Formation of voids at an interface between the solder and the solder capture pad is suppressed, by including Zn. Interlayer dielectric delamination is suppressed, and electromigration characteristics are greatly improved. Methods for forming solder joints using the solders.

公开(公告)号：US07560373B1

公开(公告)日：2009-07-14

申请号：US12059281

申请日：2008-03-31

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： H01L21/44

CPC分类号： H05K3/3463 ,  H05K3/3484 ,  H05K2201/10734

摘要： Methods of forming a microelectronic structure are described. Those methods include applying a solder paste to a portion of a board, wherein the solder paste is not applied to a ball grid array region, and placing a BGA package comprising at least one low temperature solder ball on the ball grid array region, wherein the at least one low temperature solder ball comprises a eutectic tin bismuth based solder doped with at least one of copper and nickel.

摘要翻译： 描述形成微电子结构的方法。 这些方法包括将焊膏施加到板的一部分，其中焊膏不施加到球栅阵列区域，并且将包括至少一个低温焊球的BGA封装放置在球栅阵列区域上，其中， 至少一个低温焊球包括掺杂有铜和镍中的至少一种的共晶锡铋基焊料。

公开(公告)号：US07554201B2

公开(公告)日：2009-06-30

申请号：US11513173

申请日：2006-08-31

申请人： Uu-Byung Kang ,  Yong-Hwan Kwon ,  Jong-Ho Lee ,  Chung-Sun Lee

发明人： Uu-Byung Kang ,  Yong-Hwan Kwon ,  Jong-Ho Lee ,  Chung-Sun Lee

IPC分类号： H01L23/48

CPC分类号： C22C30/06 ,  B23K35/025 ,  B23K35/262 ,  B23K35/264 ,  B23K2101/40 ,  C22C12/00 ,  C22C13/00 ,  C22C13/02 ,  C22C30/02 ,  C22C30/04 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15787 ,  H05K3/3463 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014

摘要： Example embodiments of the present invention relate to an alloy solder and a semiconductor device using the alloy solder. Other example embodiments relate to an alloy solder capable of increasing reliability of a junction between a semiconductor chip and a substrate. According to still In still other example embodiments of the present invention, there may be a tin-bismuth (Sn—Bi) family alloy solder between a semiconductor chip and a substrate, and a semiconductor device using the alloy solder. The semiconductor device may include a semiconductor chip formed with a plurality of gold bumps, a substrate having metal wirings connected to the gold bumps, and a junction including a tin-bismuth family alloy solder interposed between and connecting the gold bump and the metal wiring.

摘要翻译： 本发明的示例性实施例涉及合金焊料和使用该合金焊料的半导体器件。 其他示例实施例涉及能够增加半导体芯片和基板之间的结的可靠性的合金焊料。 根据本发明的另一个示例性实施例，可以在半导体芯片和基板之间存在锡 - 铋（Sn-Bi）族合金焊料，以及使用该合金焊料的半导体器件。 半导体器件可以包括形成有多个金凸块的半导体芯片，具有连接到金凸块的金属布线的基板以及插入在金凸块和金属布线之间并连接金凸块和金属布线的锡 - 铋系合金焊料的接合部。