公开(公告)号：US20240304422A1

公开(公告)日：2024-09-12

申请号：US18668480

申请日：2024-05-20

申请人： Applied Materials, Inc.

发明人： Sandip NIYOGI ,  Wei LIU ,  Dileep Venkata Sai VADLADI ,  Lily HUANG

IPC分类号： H01J37/32 ,  H01L21/02

CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/0228 ,  H01J2237/334

摘要： Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. The method includes generating a plasma within the gas injection channel. The plasma includes helium radicals and nitrogen radicals. The method includes delivering the plasma from the plasma source to a process chamber including a substrate. The method includes producing a treated substrate by processing the substrate with the plasma within the process chamber, in which processing the substrate includes contacting the plasma including the helium radicals and nitrogen radicals with a first side of the substrate.

公开(公告)号：US20240304421A1

公开(公告)日：2024-09-12

申请号：US18668416

申请日：2024-05-20

申请人： TOKYO ELECTRON LIMITED

发明人： Yohei YAMAZAWA

IPC分类号： H01J37/32

CPC分类号： H01J37/32183 ,  H01J37/32724

摘要： There is provided a filter circuit provided in a plasma processing device for processing a substrate using plasma generated using power of a first frequency of 4 MHz or more and power of a second frequency of 100 Hz or more and less than 4 MHz. The filter circuit comprises: a first filter provided in a wiring between a conductive member provided in the plasma processing device and a power supply configured to supply power of a third frequency of less than 100 Hz or control power which is direct-current (DC) power, to the conductive member; and a second filter provided in a wiring between the first filter and the power supply.

公开(公告)号：US12087563B2

公开(公告)日：2024-09-10

申请号：US18162274

申请日：2023-01-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Liang Lin ,  Yu-Kang Huang ,  Yu-Chuan Tai

IPC分类号： C23C14/34 ,  C23C14/18 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/345 ,  C23C14/185 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32449 ,  H01J37/3426 ,  H01J37/3464 ,  H01J37/3476 ,  H01J37/32082 ,  H01J2237/24564 ,  H01J2237/332

摘要： The physical vapor deposition tool includes a magnet component, a single cathode, and a power circuit for biasing a pedestal that supports a semiconductor substrate. During a deposition operation that deposits an inert metal material, the physical vapor deposition tool may modulate an electromagnetic field emanating from the magnet component that includes spiral-shaped bands having different ranges of magnetic strength. The physical vapor deposition tool may have an increased throughput relative to a physical vapor deposition tool without the magnet component, the single cathode, and the power circuit. Additionally, or alternatively, the inert metal material may have a grain size that is greater relative to a grain size of an inert metal material deposited using the physical vapor deposition tool without the magnet component, the single cathode, and the power circuit.

公开(公告)号：US12087562B2

公开(公告)日：2024-09-10

申请号：US17586002

申请日：2022-01-27

申请人： Tokyo Electron Limited

发明人： Kazushi Hikawa ,  Katsuhito Hirose

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H05H1/46

CPC分类号： H01J37/32935 ,  C23C16/45536 ,  C23C16/505 ,  H01J37/32082 ,  H05H1/4645

摘要： A substrate processing apparatus includes a radio-frequency power supply part configured to supply radio-frequency power for plasma generation to a processing container, and a monitoring part configured to detect an abnormality in the supply of the radio-frequency power to the processing container, wherein the monitoring part is configured to detect the abnormality in the supply of the radio-frequency power to the processing container based on a signal data obtained by sampling a signal propagating between the radio-frequency power supply part and the processing container at a sampling frequency higher than a frequency of the radio-frequency power.

公开(公告)号：US12087561B2

公开(公告)日：2024-09-10

申请号：US18329791

申请日：2023-06-06

申请人： Lam Research Corporation

发明人： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Edmund Freeman

IPC分类号： H01J37/32 ,  C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01J37/32862 ,  C23C16/0236 ,  C23C16/4405 ,  C23C16/45544 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/67069 ,  H01J37/3211 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/186 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/02164 ,  H01L21/6833

摘要： A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US12087560B2

公开(公告)日：2024-09-10

申请号：US17216972

申请日：2021-03-30

申请人： SEMES CO., LTD.

发明人： Dukhyun Son ,  Byung Kyu Kim

IPC分类号： H01J37/32 ,  B25J11/00 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01J37/32743 ,  B25J11/005 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67766 ,  H01L21/67769 ,  H01L21/67778 ,  H01L21/68707

摘要： The substrate treating apparatus includes a processing module and an index module on which a cassette having the substrate received therein is placed and that includes an index robot that transfers the substrate between the cassette and the processing module. The processing module includes a process chamber and a transfer chamber. The process chamber includes a support unit. The support unit includes a support on which the substrate is placed and a ring member that surrounds the substrate placed on the support and that is provided so as to be detachable from the support. The apparatus further includes a carrier storage unit that stores a carrier that is mounted on a hand of the main transfer robot or the index robot and on which the ring member is placed when the ring member is transferred by the main transfer robot or the index robot.

公开(公告)号：US12087559B2

公开(公告)日：2024-09-10

申请号：US18073171

申请日：2022-12-01

申请人： Tokyo Electron Limited

发明人： Shinsuke Oka

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01J37/32724 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32926 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

摘要： A heater controller controls power supplied to a heater capable of adjusting the temperature of a placement surface such that the heater reaches a set temperature. A temperature monitor measures the power supplied in the non-ignited state where the plasma is not ignited and in the transient state where the power supplied to the heater decreases after the plasma is ignited, while the power is controlled such that the temperature of the heater becomes constant. A parameter calculator calculates a heat input amount and the thermal resistance by using the power supplied in the non-ignited state and in the transient state to perform a fitting on a calculation model for calculating the power supplied in the transient state. A set temperature calculator calculates the set temperature of the heater at which the wafer reaches the target temperature, using the heat input amount and thermal resistance.

公开(公告)号：US12087557B2

公开(公告)日：2024-09-10

申请号：US17016888

申请日：2020-09-10

申请人： LAM RESEARCH CORPORATION

发明人： Shen Peng ,  Tamarak Pandhumsoporn ,  Anthony Nguyen ,  Dan Marohl

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H01L21/67 ,  H10N30/082

CPC分类号： H01J37/32651 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32715 ,  H01L21/67069 ,  H01J2237/334 ,  H10N30/082

摘要： A substrate processing system includes a processing chamber including a dielectric window and a substrate support arranged therein to support a substrate. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A Faraday shield is arranged between the coil and the dielectric window. An RF generator is configured to supply RF power to the coil. The coil is coupled by stray capacitance and/or directly coupled to the Faraday shield. A capacitor is connected to one of the coil and the Faraday shield to adjust a position of a voltage standing wave along the coil.

公开(公告)号：US12087545B2

公开(公告)日：2024-09-10

申请号：US18171829

申请日：2023-02-21

申请人： Analogic Corporation

发明人： Ahmed A. Hussein

IPC分类号： H03M1/66 ,  H01J37/32 ,  H03F3/24 ,  H03G3/30

CPC分类号： H01J37/32146 ,  H03F3/245 ,  H03G3/3042 ,  H03M1/66 ,  H03F2200/451 ,  H03G2201/103 ,  H03G2201/307

摘要： One or more example relate, generally, to generating radio frequency (RF) signals. An apparatus may include a signal generator, an amplification stage, and a feedback control loop. The signal generator may generate a pulsed radio frequency (RF) signal at least partially responsive to a digital pulsed waveform defined by one or more commands. The amplification stage may amplify the pulsed RF signal. The feedback control loop may be coupled to the amplification stage to regulate a power level of respective steps of the pulsed RF signal.

公开(公告)号：US20240297025A1

公开(公告)日：2024-09-05

申请号：US18647077

申请日：2024-04-26

申请人： Tokyo Electron Limited

发明人： Kota SENO ,  Fumiaki ARIYOSHI

IPC分类号： H01J37/32

CPC分类号： H01J37/32605 ,  H01J37/32568 ,  H01J37/3288 ,  H01J37/32091

摘要： A plasma processing system includes a plasma processing apparatus and a transfer device. The plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed inside the plasma processing chamber and having a lower electrode; an upper electrode assembly disposed above the substrate support, and having an electrode support and a replaceable upper electrode plate disposed below the electrode support; and a lifter configured to move the replaceable upper electrode plate vertically between an upper position and a lower position inside the plasma processing chamber, and configured to fix the replaceable upper electrode plate to the electrode support when the replaceable upper electrode plate is in the upper position. The transfer device includes: a transfer chamber; and a transfer robot disposed inside the transfer chamber, and configured to transfer the replaceable upper electrode plate between the lower position inside the plasma processing chamber and the transfer chamber.