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公开(公告)号：US20100200271A1
公开(公告)日：2010-08-12
申请号：US12704592
申请日：2010-02-12
申请人： Charles L. Arvin , Alexandre Blander , Peter J. Brofman , Donald W. Henderson , Gareth G. Hougham , Hsichang Liu , Eric D. Perfecto , Srinivasa S.N. Reddy , Krystyna W. Semkow , Kamalesh K. Srivastava , Brian R. Sundlof , Julien Sylvestre , Renee L. Weisman
发明人： Charles L. Arvin , Alexandre Blander , Peter J. Brofman , Donald W. Henderson , Gareth G. Hougham , Hsichang Liu , Eric D. Perfecto , Srinivasa S.N. Reddy , Krystyna W. Semkow , Kamalesh K. Srivastava , Brian R. Sundlof , Julien Sylvestre , Renee L. Weisman
CPC分类号： H01B1/02 , B23K35/0244 , B23K35/262 , B23K35/36 , B23K35/3602 , B82Y30/00 , C22C13/00 , H01B13/00 , H01L23/49866 , H01L2924/0002 , H05K3/3436 , H05K3/3463 , H05K2201/0209 , H05K2201/0257 , Y10T29/49117 , H01L2924/00
摘要： In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.
摘要翻译： 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。
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公开(公告)号：US20130252418A1
公开(公告)日：2013-09-26
申请号：US13874509
申请日：2013-05-01
申请人： CHARLES L. ARVIN , KENNETH BIRD , CHARLES C. GOLDSMITH , SUNG K. KANG , MINHUA LU , CLARE J. MCCARTHY , ERIC D. PERFECTO , SRINIVASA S.N. REDDY , KRYSTYNA W. SEMKOW , THOMAS A. WASSICK
发明人： CHARLES L. ARVIN , KENNETH BIRD , CHARLES C. GOLDSMITH , SUNG K. KANG , MINHUA LU , CLARE J. MCCARTHY , ERIC D. PERFECTO , SRINIVASA S.N. REDDY , KRYSTYNA W. SEMKOW , THOMAS A. WASSICK
IPC分类号： H01L21/768
CPC分类号： H01L21/7685 , H01L21/321 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/742 , H01L24/81 , H01L2224/0382 , H01L2224/0401 , H01L2224/11003 , H01L2224/11005 , H01L2224/1111 , H01L2224/1131 , H01L2224/11462 , H01L2224/1147 , H01L2224/1184 , H01L2224/11849 , H01L2224/11903 , H01L2224/13017 , H01L2224/13027 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13562 , H01L2224/13566 , H01L2224/1357 , H01L2224/136 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81801 , H01L2924/181 , H01L2924/01028 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.
摘要翻译： 本发明的实施例包括无铅焊料互连结构和用于制造无铅互连结构的方法。 该结构包括具有最后金属层的半导体衬底，附着于最后金属层的铜基座，附着于铜基座的阻挡层，与阻挡层连接的阻挡保护层，以及与该阻挡层相接触的无铅焊料层 铜底座的最小一侧。
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公开(公告)号：US20090181533A1
公开(公告)日：2009-07-16
申请号：US11954828
申请日：2007-12-12
IPC分类号： H01L21/441
CPC分类号： H05K3/3457 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/051 , H01L2224/05572 , H01L2224/11334 , H01L2224/13099 , H01L2224/16 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H05K2203/0113 , H05K2203/0338 , H01L2224/29099 , H01L2224/05599
摘要： A method is provided for the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and determines if any off-set resulted between the solder mold array and the wafer capture array during the transfer process. The amount of off-set enables the operator to adjust the transfer tool before solder transfer to compensate for the off-set caused by the transfer process and provides a more cost-effective and efficient solder transfer process. A solder reactive material surrounding the capture pads is used to determine where the solder reacts with the solder reactive material showing the off-set resulting from the transfer process. Copper is a preferred solder reactive material.
摘要翻译： 提供了一种用于在晶片或其他电子设备上制造互连焊料凸块的方法。 该方法对于众所周知的C4NP互连技术特别有用，并且确定在传输过程期间在焊料模具阵列和晶片捕获阵列之间是否产生偏移。 偏移量使操作员能够在焊接传输之前调整传送工具，以补偿由传送过程引起的偏移，并提供更具成本效益和更有效的焊接传输过程。 使用围绕捕获垫的焊料反应性材料来确定焊料与焊料反应性材料反应的位置，显示由转移过程导致的偏移。 铜是优选的焊料反应性材料。
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公开(公告)号：US20130249066A1
公开(公告)日：2013-09-26
申请号：US13427940
申请日：2012-03-23
申请人： CHARLES L. ARVIN , KENNETH BIRD , CHARLES C. GOLDSMITH , SUNG K. KANG , MINHUA LU , CLARE JOHANNA MCCARTHY , ERIC DANIEL PERFECTO , SRINIVASA S.N. REDDY , KRYSTYNA WALERIA SEMKOW , THOMAS ANTHONY WASSICK
发明人： CHARLES L. ARVIN , KENNETH BIRD , CHARLES C. GOLDSMITH , SUNG K. KANG , MINHUA LU , CLARE JOHANNA MCCARTHY , ERIC DANIEL PERFECTO , SRINIVASA S.N. REDDY , KRYSTYNA WALERIA SEMKOW , THOMAS ANTHONY WASSICK
IPC分类号： H01L23/495 , H01L21/28
CPC分类号： H01L21/7685 , H01L21/321 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/742 , H01L24/81 , H01L2224/0382 , H01L2224/0401 , H01L2224/11003 , H01L2224/11005 , H01L2224/1111 , H01L2224/1131 , H01L2224/11462 , H01L2224/1147 , H01L2224/1184 , H01L2224/11849 , H01L2224/11903 , H01L2224/13017 , H01L2224/13027 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13562 , H01L2224/13566 , H01L2224/1357 , H01L2224/136 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81801 , H01L2924/181 , H01L2924/01028 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.
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5.发明申请METHOD OF FORMING UNDERBUMP METALLURGY STRUCTURE EMPLOYING SPUTTER-DEPOSITED NICKEL COPPER ALLOY 审中-公开形成金属结构的方法使用溅射沉积镍合金公开(公告)号：US20120202343A1
公开(公告)日：2012-08-09
申请号：US13448500
申请日：2012-04-17
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , C22C19/03 , C23C14/025 , C23C14/165 , H01L24/11 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/0554 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11334 , H01L2224/13006 , H01L2224/13099 , H01L2224/13111 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/00014 , H01L2924/013
摘要： A metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Cu alloy in which the weight percentage of Ni is from about 50% to about 70% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. Optionally, a wetting layer comprising Cu or Au may be deposited by sputtering. A C4 ball is applied to a surface of the underbump metallic layer comprising the Ni—Cu alloy or the wetting layer for C4 processing. The sputter deposition of the Ni—Cu alloy offers economic advantages relative to known methods in the art since the Ni—Cu alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Cu alloy is limited during C4 processing.
摘要翻译： 在暴露在钝化层的开口中的最后一级金属板上形成金属粘附层。 通过溅射将Ni的重量百分比为约50％至约70％的Ni-Cu合金沉积到金属粘合层上以形成下凸块金属层。 任选地，可以通过溅射沉积包含Cu或Au的润湿层。 将C4球施加到包含Ni-Cu合金或用于C4加工的润湿层的底部基底金属层的表面上。 Ni-Cu合金的溅射沉积相对于本领域已知的方法提供经济优势，因为本发明组合物中的Ni-Cu合金是非磁性的并且易于溅射，并且本发明的Ni-Cu C4加工时合金有限。
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公开(公告)号：US20090140423A1
公开(公告)日：2009-06-04
申请号：US11947070
申请日：2007-11-29
CPC分类号： H01L24/13 , C22C19/007 , C22C19/03 , C23C14/025 , C23C14/165 , H01L24/11 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/0554 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13006 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2224/13099 , H01L2924/00014 , H01L2924/013
摘要： A a metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Ti alloy in which the weight percentage of Ti is from about 6.5% to about 30% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. A wetting layer comprising Cu or Ag or Au is deposited on top of Ni—Ti layer by sputtering. A C4 ball is applied to a surface of the wetting layer for C4 processing. The sputter deposition of the Ni—Ti alloy offers economic and performance advantages relative to known methods in the art since the Ni—Ti alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Ti alloy is limited during C4 processing. Also, Sn in the solder reacts uniformly with both Ni and Ti and the consumption of Ni—Ti by Sn solder is less than that for pure Ni.
摘要翻译： 在暴露在钝化层的开口中的最后一级金属板上形成金属粘合层。 其中Ti的重量百分数为约6.5％至约30％的Ni-Ti合金通过溅射沉积到金属粘合层上以形成底部金属层。 通过溅射将包含Cu或Ag或Au的润湿层沉积在Ni-Ti层的顶部上。 将C4球施加到用于C4加工的润湿层的表面。 Ni-Ti合金的溅射沉积相对于本领域已知的方法提供经济和性能优点，因为本发明组合物中的Ni-Ti合金是非磁性的并且易于溅射，并且本发明的Ni -Ti合金在C4加工过程中受到限制。 此外，焊料中的Sn与Ni和Ti均匀地反应，Sn焊料的Ni-Ti的消耗小于纯Ni的消耗。
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7.发明申请UNDERBUMP METALLURGY EMPLOYING SPUTTER-DEPOSITED NICKEL TITANIUM COPPER ALLOY 审中-公开金属冶金采用溅射沉积镍合金铜合金公开(公告)号：US20090134016A1
公开(公告)日：2009-05-28
申请号：US11946231
申请日：2007-11-28
IPC分类号： C23C14/00
CPC分类号： H01L24/13 , C22C19/03 , C23C14/025 , C23C14/165 , H01L24/11 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/0554 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11334 , H01L2224/13006 , H01L2224/13099 , H01L2224/13111 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/00014 , H01L2924/013
摘要： A metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Cu alloy in which the weight percentage of Ni is from about 50% to about 70% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. Optionally, a wetting layer comprising Cu or Au may be deposited by sputtering. A C4 ball is applied to a surface of the underbump metallic layer comprising the Ni—Cu alloy or the wetting layer for C4 processing. The sputter deposition of the Ni—Cu alloy offers economic advantages relative to known methods in the art since the Ni—Cu alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Cu alloy is limited during C4 processing.
摘要翻译： 在暴露在钝化层的开口中的最后一级金属板上形成金属粘附层。 通过溅射将Ni的重量百分比为约50％至约70％的Ni-Cu合金沉积到金属粘合层上以形成下凸块金属层。 任选地，可以通过溅射沉积包含Cu或Au的润湿层。 将C4球施加到包含Ni-Cu合金或用于C4加工的润湿层的底部基底金属层的表面上。 Ni-Cu合金的溅射沉积相对于本领域已知的方法提供经济优势，因为本发明组合物中的Ni-Cu合金是非磁性的并且易于溅射，并且本发明的Ni-Cu C4加工时合金有限。
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