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    FABRICATING METHODS OF SEMICONDUCTOR DEVICES AND PICK-UP APPARATUSES OF SEMICONDUCTOR DEVICES THEREIN
    5.
    发明申请
    FABRICATING METHODS OF SEMICONDUCTOR DEVICES AND PICK-UP APPARATUSES OF SEMICONDUCTOR DEVICES THEREIN 审中-公开
    半导体器件的制造方法及其半导体器件的拾取器件

    公开(公告)号：US20130149817A1

    公开(公告)日：2013-06-13

    申请号：US13559141

    申请日：2012-07-26

    申请人： Chang-Seong JEON ,  Sang-Sick PARK ,  Sang-Wook PARK ,  Teak-Hoon LEE ,  Kwang-Chul CHOI

    发明人： Chang-Seong JEON ,  Sang-Sick PARK ,  Sang-Wook PARK ,  Teak-Hoon LEE ,  Kwang-Chul CHOI

    IPC分类号： H01L21/762

    CPC分类号： H01L21/67144 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/13101 ,  H01L2224/16145 ,  H01L2224/75822 ,  H01L2224/75823 ,  H01L2224/8117 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/10253 ,  H01L2924/014 ,  H01L2924/00014

    摘要： A fabricating method of a semiconductor device may include forming a semiconductor die on a supporting wafer, and picking up the die from the wafer by attaching to the die a transfer unit, the transfer unit including a head unit configured to enable twisting movement, and performing the twisting movement. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer; and picking up the first semiconductor device from the wafer, moving the first semiconductor device onto a second semiconductor device, and bonding the first semiconductor device to the second semiconductor device while maintaining the first semiconductor device oriented so that a surface faces upwardly. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer, attaching to the first semiconductor device a transfer unit configured to enable twisting movement, and performing the twisting movement.

    摘要翻译： 半导体器件的制造方法可以包括在支撑晶片上形成半导体管芯，并且通过将转移单元附接到管芯而从晶片上拾取管芯，所述转移单元包括构造成能够进行扭转运动的头单元，以及执行 扭转运动。 半导体器件的制造方法可以包括在支撑晶片上形成第一半导体器件; 以及从所述晶片拾取所述第一半导体器件，将所述第一半导体器件移动到第二半导体器件上，并且将所述第一半导体器件接合到所述第二半导体器件，同时保持所述第一半导体器件定向成使得表面朝上。 半导体器件的制造方法可以包括在支撑晶片上形成第一半导体器件，附接到第一半导体器件，被配置为能够进行扭转运动并执行扭转运动的转移单元。

    Multi-Chip Package Having Semiconductor Chips Of Different Thicknesses From Each Other And Related Device
    6.
    发明申请
    Multi-Chip Package Having Semiconductor Chips Of Different Thicknesses From Each Other And Related Device 有权
    具有彼此不同厚度的半导体芯片和相关器件的多芯片封装

    公开(公告)号：US20110193229A1

    公开(公告)日：2011-08-11

    申请号：US13013290

    申请日：2011-01-25

    申请人： Keum-Hee Ma ,  Woo-Dong Lee ,  Min-Seung Yoon ,  Ju-il Choi ,  Sang-Sick Park ,  Son-Kwan Hwang

    发明人： Keum-Hee Ma ,  Woo-Dong Lee ,  Min-Seung Yoon ,  Ju-il Choi ,  Sang-Sick Park ,  Son-Kwan Hwang

    IPC分类号： H01L23/48

    CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/563 ,  H01L23/481 ,  H01L23/49816 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555

    摘要： A semiconductor device having semiconductor chips of different thicknesses is provided. The semiconductor device may include a first semiconductor chip, a sub-board on a first side of the first semiconductor chip, at least one second semiconductor chip on a second side of the first semiconductor chip, at least one external contact terminal on the at least one second semiconductor chip. In example embodiments the at least one second semiconductor chip may include a plurality of through silicon vias and the at least one external contact terminal may be in electrical contact with the first semiconductor chip and the at least one second semiconductor chip via the plurality of through silicon vias. In example embodiments, the at least one second semiconductor chip may be thinner than the first semiconductor chip.

    摘要翻译： 提供具有不同厚度的半导体芯片的半导体器件。 半导体器件可以包括第一半导体芯片，在第一半导体芯片的第一侧上的子板，在第一半导体芯片的第二侧上的至少一个第二半导体芯片，至少一个外部接触端子 一秒钟的半导体芯片。 在示例实施例中，所述至少一个第二半导体芯片可以包括多个通孔硅通孔，并且所述至少一个外部接触端子可以经由多个通孔与第一半导体芯片和至少一个第二半导体芯片电接触 通孔 在示例实施例中，至少一个第二半导体芯片可以比第一半导体芯片更薄。

    Multi-chip package having semiconductor chips of different thicknesses from each other and related device
    7.
    发明授权
    Multi-chip package having semiconductor chips of different thicknesses from each other and related device 有权
    具有彼此不同厚度的半导体芯片的多芯片封装和相关器件

    公开(公告)号：US08513802B2

    公开(公告)日：2013-08-20

    申请号：US13013290

    申请日：2011-01-25

    申请人： Keum-Hee Ma ,  Woo-Dong Lee ,  Min-Seung Yoon ,  Ju-Il Choi ,  Sang-Sick Park ,  Son-Kwan Hwang

    发明人： Keum-Hee Ma ,  Woo-Dong Lee ,  Min-Seung Yoon ,  Ju-Il Choi ,  Sang-Sick Park ,  Son-Kwan Hwang

    IPC分类号： H01L23/48

    CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/563 ,  H01L23/481 ,  H01L23/49816 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555

    摘要： A semiconductor device having semiconductor chips of different thicknesses is provided. The semiconductor device may include a first semiconductor chip, a sub-board on a first side of the first semiconductor chip, at least one second semiconductor chip on a second side of the first semiconductor chip, at least one external contact terminal on the at least one second semiconductor chip. In example embodiments the at least one second semiconductor chip may include a plurality of through silicon vias and the at least one external contact terminal may be in electrical contact with the first semiconductor chip and the at least one second semiconductor chip via the plurality of through silicon vias. In example embodiments, the at least one second semiconductor chip may be thinner than the first semiconductor chip.

    摘要翻译： 提供具有不同厚度的半导体芯片的半导体器件。 半导体器件可以包括第一半导体芯片，在第一半导体芯片的第一侧上的子板，在第一半导体芯片的第二侧上的至少一个第二半导体芯片，至少一个外部接触端子 一秒钟的半导体芯片。 在示例实施例中，所述至少一个第二半导体芯片可以包括多个通孔硅通孔，并且所述至少一个外部接触端子可以经由多个通孔与第一半导体芯片和至少一个第二半导体芯片电接触 通孔 在示例实施例中，至少一个第二半导体芯片可以比第一半导体芯片更薄。

    METHOD OF FABRICATING SEMICONDUCTOR STACK PACKAGE
    8.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR STACK PACKAGE 审中-公开
    制造半导体堆叠封装的方法

    公开(公告)号：US20120077314A1

    公开(公告)日：2012-03-29

    申请号：US13241945

    申请日：2011-09-23

    申请人： Sang-sick PARK ,  Dong-hyeon JANG ,  Chang-seong JEON ,  Teak-boon LEE

    发明人： Sang-sick PARK ,  Dong-hyeon JANG ,  Chang-seong JEON ,  Teak-boon LEE

    IPC分类号： H01L21/98

    CPC分类号： H01L25/0657 ,  H01L23/3107 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/15311

    摘要： Methods of fabricating a semiconductor stack package having a high capacity, a small volume and reliability. According to the method of fabricating a semiconductor stack package, a first semiconductor substrate including a plurality of first semiconductor chips is attached to a chip protection film. The chip protection film is expanded such that the plurality of the first semiconductor chips are spaced apart from each other. A plurality of second semiconductor chips are attached to the plurality of the first semiconductor chips, respectively. A molding layer is formed between the plurality of the first semiconductor chips and between the plurality of the second semiconductor chips. The molding layer and the chip protection film are sawed to separate the semiconductor stack package comprising the first semiconductor chip and the second semiconductor chip into a unit.

    摘要翻译： 制造具有高容量，小体积和可靠性的半导体堆叠封装的方法。 根据制造半导体堆叠封装的方法，将包括多个第一半导体芯片的第一半导体衬底附接到芯片保护膜。 芯片保护膜被扩张使得多个第一半导体芯片彼此间隔开。 多个第二半导体芯片分别附接到多个第一半导体芯片。 在多个第一半导体芯片之间和多个第二半导体芯片之间形成模制层。 将模制层和芯片保护膜锯切以将包括第一半导体芯片和第二半导体芯片的半导体堆叠封装分离成一个单元。