公开(公告)号：US20050092935A1

公开(公告)日：2005-05-05

申请号：US10698726

申请日：2003-10-30

申请人： Alexandros Demos ,  Hari Ponnekanti ,  Jun Zhao ,  Helen Armer

发明人： Alexandros Demos ,  Hari Ponnekanti ,  Jun Zhao ,  Helen Armer

IPC分类号： H01J37/077 ,  H01J37/317

CPC分类号： H01J37/317 ,  H01J3/025 ,  H01J37/077

摘要： One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

摘要翻译： 本发明的一个实施例是一种电子束处理装置，包括：（a）室; （b）具有暴露于所述室内部的相对较大面积表面的阴极; （c）其中具有孔的阳极，其设置在室内并与阴极间隔开工作距离; （d）设置在面向阳极的腔室内的晶片保持器; （e）负电压源，其输出被施加到阴极以提供阴极电压; （f）其输出端施加到阳极的电压源; （g）气体入口，其适于以引入速率将气体引入所述腔室; 以及（h）适于以排气速度从所述室排出气体的泵，所述引入速率和排气速率在所述室中提供气体压力; 其中阴极电压，气体压力和工作距离的值使得阴极和阳极之间没有电弧，并且工作距离大于电子平均自由程。

公开(公告)号：US20050239293A1

公开(公告)日：2005-10-27

申请号：US10830203

申请日：2004-04-21

申请人： Zhenjiang Cui ,  Josephine Chang ,  Alexandros Demos ,  Reza Arghavani ,  Derek Witty ,  Helen Armer ,  Girish Dixit ,  Hichem M'Saad

发明人： Zhenjiang Cui ,  Josephine Chang ,  Alexandros Demos ,  Reza Arghavani ,  Derek Witty ,  Helen Armer ,  Girish Dixit ,  Hichem M'Saad

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H01L21/42 ,  H01L21/469 ,  H01L21/477

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

摘要翻译： 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。 一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

公开(公告)号：US20070275569A1

公开(公告)日：2007-11-29

申请号：US11838742

申请日：2007-08-14

申请人： FARHAD MOGHADAM ,  Jun Zhao ,  Timothy Weidman ,  Rick Roberts ,  Li-Qun Xia ,  Alexandros Demos

发明人： FARHAD MOGHADAM ,  Jun Zhao ,  Timothy Weidman ,  Rick Roberts ,  Li-Qun Xia ,  Alexandros Demos

IPC分类号： H01L21/31

CPC分类号： B05D1/60 ,  B05D3/068 ,  B05D3/141 ,  B05D5/08 ,  B05D5/12 ,  C08G77/50 ,  C23C16/26 ,  C23C16/401 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/0276 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/316 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76829

摘要： One embodiment of the present invention is a method for fabricating a dielectric film, comprising chemical vapor depositing a dielectric film, and curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising one or more organo-silicon compounds and one or more carbon-carbon bond containing hydrocarbon compounds.

摘要翻译： 本发明的一个实施例是一种用于制造电介质膜的方法，包括化学气相沉积电介质膜和固化电介质膜，其中电介质膜包括硅和碳，并且化学气相沉积利用包含一个或多个 有机硅化合物和一种或多种含碳 - 碳键的烃化合物。

公开(公告)号：US20050130404A1

公开(公告)日：2005-06-16

申请号：US11045650

申请日：2005-01-28

申请人： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick Roberts ,  Li-Qun Xia ,  Alexandros Demos

发明人： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick Roberts ,  Li-Qun Xia ,  Alexandros Demos

IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/26 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/31 ,  H01L21/00 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/84

CPC分类号： B05D1/60 ,  B05D3/068 ,  B05D3/141 ,  B05D5/08 ,  B05D5/12 ,  C08G77/50 ,  C23C16/26 ,  C23C16/401 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/0276 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/316 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76829

摘要： One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

摘要翻译： 本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

公开(公告)号：US20080233366A1

公开(公告)日：2008-09-25

申请号：US11690248

申请日：2007-03-23

申请人： Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

发明人： Daniel C. Edelstein ,  Alexandros Demos ,  Stephen M. Gates ,  Alfred Grill ,  Steven E. Molis ,  Vu Ngoc Tran Nguyen ,  Steven Reiter ,  Darryl D. Restaino ,  Kang Sub Yim

IPC分类号： B32B3/00 ,  B05D5/12

CPC分类号： C23C16/401 ,  C23C16/0272 ,  C23C16/029 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10T428/24851 ,  Y10T428/249961

摘要： Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

摘要翻译： 公开了一种用于形成包括具有增加的机械强度的SiCOH层的结构的结构和方法。 该结构包括具有电介质或导电材料层的基底，介电层或导电材料层上的氧化物层，氧化物层基本上不含碳，氧化物层上的渐变过渡层，梯度过渡层基本上 在与氧化物层的界面处没有碳并逐渐向多孔SiCOH层增加碳，并且在渐变过渡层上的多孔SiCOH（pSiCOH）层，多孔pSiCOH层在整个层中具有均匀的组成。 该方法包括一种方法，其中在渐变过渡层中，在碳浓度中没有峰，而在氧浓度中没有下降。

公开(公告)号：US20080041415A1

公开(公告)日：2008-02-21

申请号：US11925611

申请日：2007-10-26

申请人： Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

发明人： Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

IPC分类号： B08B6/00

CPC分类号： B08B7/0035 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/4405 ,  C23C16/56 ,  H01J37/3174 ,  Y10S438/905

摘要： One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

摘要翻译： 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

公开(公告)号：US20070134435A1

公开(公告)日：2007-06-14

申请号：US11304847

申请日：2005-12-13

申请人： Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

发明人： Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

IPC分类号： C23C16/00 ,  C08J7/04

CPC分类号： C23C16/401 ,  C08J7/065 ,  C08J7/08 ,  C08J7/12 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31633

摘要： A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si—C bonds per Si atom. The second organosilicon compound has an average number of Si—C bonds per Si atom that is greater than the average number of Si—C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.

摘要翻译： 提供了一种从包含两种有机硅化合物的混合物在室中的衬底上沉积低介电常数膜的方法。 该混合物还可包括烃化合物和氧化气体。 第一有机硅化合物每Si原子平均具有一个或多个Si-C键。 第二有机硅化合物具有比Si原子中Si-C键的平均数大于第一有机硅化合物中每Si原子的Si-C键的平均数。 低介电常数膜具有良好的等离子/湿蚀刻损伤电阻，良好的机械性能和期望的介电常数。

公开(公告)号：US20060289795A1

公开(公告)日：2006-12-28

申请号：US11383383

申请日：2006-05-15

申请人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

发明人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

IPC分类号： G21G5/00

CPC分类号： H01J37/317 ,  H01J2237/2001

摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

摘要翻译： 提供了用于基板的电子束处理的方法和装置。 一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括阴极，阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

公开(公告)号：US20060192150A1

公开(公告)日：2006-08-31

申请号：US11414649

申请日：2006-04-27

申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/317 ,  H01J2237/0041

摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US20050233591A1

公开(公告)日：2005-10-20

申请号：US11046090

申请日：2005-01-28

申请人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

发明人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

IPC分类号： B44C1/22 ,  C23C16/40 ,  C23C16/56 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

摘要翻译： 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2/2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。