公开(公告)号：US09034695B2

公开(公告)日：2015-05-19

申请号：US13444662

申请日：2012-04-11

申请人： Cheng-Chieh Hsieh ,  Shang-Yun Hou ,  Shin-Puu Jeng

发明人： Cheng-Chieh Hsieh ,  Shang-Yun Hou ,  Shin-Puu Jeng

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L23/427 ,  H01L21/48 ,  H01L23/498 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/50 ,  H01L21/4878 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/427 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/33107 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92225 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2924/00

摘要： A method includes attaching a wafer on a carrier through an adhesive, and forming trenches in the carrier to convert the carrier into a heat sink. The heat sink, the carrier, and the adhesive are sawed into a plurality of packages.

摘要翻译： 一种方法包括通过粘合剂将晶片附着在载体上，并在载体中形成沟槽以将载体转换成散热器。 散热器，载体和粘合剂被锯成多个包装。

公开(公告)号：US20130020698A1

公开(公告)日：2013-01-24

申请号：US13189127

申请日：2011-07-22

申请人： Cheng-Chieh Hsieh ,  Cheng-Lin Huang ,  Po-Hao Tsai ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Shin-Puu Jeng

发明人： Cheng-Chieh Hsieh ,  Cheng-Lin Huang ,  Po-Hao Tsai ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Shin-Puu Jeng

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/11616 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13013 ,  H01L2224/13015 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1362 ,  H01L2224/13655 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/16056 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81121 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06555 ,  H01L2225/06565 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/12 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/384 ,  H01L2924/3841 ,  H01L2924/00014

摘要： A system and method for conductive pillars is provided. An embodiment comprises a conductive pillar having trenches located around its outer edge. The trenches are used to channel conductive material such as solder when a conductive bump is formed onto the conductive pillar. The conductive pillar may then be electrically connected to another contact through the conductive material.

摘要翻译： 提供了一种用于导电柱的系统和方法。 一个实施例包括具有位于其外边缘周围的沟槽的导电柱。 当在导电柱上形成导电凸块时，沟槽用于引导诸如焊料的导电材料。 导电柱然后可以通过导电材料电连接到另一接触件。

公开(公告)号：US20120306080A1

公开(公告)日：2012-12-06

申请号：US13298046

申请日：2011-11-16

申请人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Kuo-Ching Hsu ,  Cheng-Chieh Hsieh ,  Ying-Ching Shih ,  Po-Hao Tsai ,  Cheng-Lin Huang ,  Jing-Cheng Lin

发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Kuo-Ching Hsu ,  Cheng-Chieh Hsieh ,  Ying-Ching Shih ,  Po-Hao Tsai ,  Cheng-Lin Huang ,  Jing-Cheng Lin

IPC分类号： H01L23/52

CPC分类号： H01L24/11 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/04 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05184 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10145 ,  H01L2224/10156 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11831 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/13578 ,  H01L2224/13686 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/3651 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2924/00

摘要： A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier.

摘要翻译： 封装组件不含其中的有源器件。 封装部件包括衬底，衬底中的通孔，衬底上的顶部电介质层和在顶部电介质层的顶表面上方具有顶表面的金属柱。 金属柱电连接到通孔。 扩散阻挡层在金属支柱的上表面之上。 焊料帽设置在扩散阻挡层上。

公开(公告)号：US20110277980A1

公开(公告)日：2011-11-17

申请号：US13189389

申请日：2011-07-22

申请人： Zhihua Li ,  Cheng-Chieh Hsieh ,  Xuejiao Hu ,  Hakan Erturk ,  George Chen

发明人： Zhihua Li ,  Cheng-Chieh Hsieh ,  Xuejiao Hu ,  Hakan Erturk ,  George Chen

IPC分类号： F28F7/00

CPC分类号： H05K7/20418 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3733 ,  H01L23/3735 ,  H01L23/3737 ,  H01L2924/0002 ,  Y10T29/4935 ,  H01L2924/00

摘要： The present invention discloses a method of cooling an ultramobile device with microfins attached to an external wall of an enclosure surrounding the ultramobile device.

摘要翻译： 本发明公开了一种用连接到围绕超移动装置的外壳的外壁的微结构冷却超移动装置的方法。

公开(公告)号：US08816498B2

公开(公告)日：2014-08-26

申请号：US13189127

申请日：2011-07-22

申请人： Cheng-Chieh Hsieh ,  Cheng-Lin Huang ,  Po-Hao Tsai ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Shin-Puu Jeng

发明人： Cheng-Chieh Hsieh ,  Cheng-Lin Huang ,  Po-Hao Tsai ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Shin-Puu Jeng

IPC分类号： H01L23/485 ,  H01L21/768

摘要： A system and method for conductive pillars is provided. An embodiment comprises a conductive pillar having trenches located around its outer edge. The trenches are used to channel conductive material such as solder when a conductive bump is formed onto the conductive pillar. The conductive pillar may then be electrically connected to another contact through the conductive material.

公开(公告)号：US08604619B2

公开(公告)日：2013-12-10

申请号：US13302653

申请日：2011-11-22

申请人： Cheng-Chieh Hsieh ,  Hung-An Teng ,  Shang-Yun Hou ,  Shin-Puu Jeng

发明人： Cheng-Chieh Hsieh ,  Hung-An Teng ,  Shang-Yun Hou ,  Shin-Puu Jeng

IPC分类号： H01L23/48

CPC分类号： H01L23/562 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while the first KOZ contains only those points at which a stress impact caused by the TSV is larger than or equal to the first performance threshold. A second KOZ for the TSV can be similarly formed by a second performance threshold. A plurality of TSVs can be placed in a direction that the KOZ of the TSV has smallest radius to a center of the TSV, which may be in a crystal orientation [010] or [100]. A plurality of TSV stress plug can be formed at the boundary of the overall KOZ of the plurality of TSVs.

摘要翻译： 为硅通孔（TSV）形成保留区（KOZ）。 设备可以放置在由第一性能阈值确定的TSV的第一KOZ之外，使得由设备的TSV引起的应力冲击小于第一性能阈值，而第一KOZ仅包含应力冲击的那些点 由TSV引起的大于或等于第一个性能阈值。 用于TSV的第二KOZ可以类似地由第二性能阈值形成。 多个TSV可以沿着TSV的KOZ具有最小半径的方向被放置到TSV的中心，其可以是晶体取向[010]或[100]。 可以在多个TSV的整个KOZ的边界处形成多个TSV应力塞。

公开(公告)号：US08519537B2

公开(公告)日：2013-08-27

申请号：US12813212

申请日：2010-06-10

申请人： Shin-Puu Jeng ,  Kim Hong Chen ,  Shang-Yun Hou ,  Chao-Wen Shih ,  Cheng-Chieh Hsieh ,  Chen-Hua Yu

发明人： Shin-Puu Jeng ,  Kim Hong Chen ,  Shang-Yun Hou ,  Chao-Wen Shih ,  Cheng-Chieh Hsieh ,  Chen-Hua Yu

IPC分类号： H01L23/13 ,  H01L23/538 ,  H01L23/488

CPC分类号： H01L25/50 ,  H01L23/13 ,  H01L23/3677 ,  H01L23/42 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

摘要： A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die.

摘要翻译： 提供了使用插入器的3D半导体封装。 在一个实施例中，提供了具有电耦合到插入器的第一侧的第一管芯的插入器和电耦合到插入件的第二侧的第二管芯。 插入器电耦合到诸如封装衬底，高密度互连，印刷电路板等的下面的衬底。 衬底具有腔，使得第二管芯位于腔内。 使用空腔可以允许使用更小的导电凸块，从而允许使用更多数量的导电凸块。 散热器可以放置在空腔内以帮助从第二模具散热。

公开(公告)号：US08381994B2

公开(公告)日：2013-02-26

申请号：US13025172

申请日：2011-02-11

申请人： Cheng-Chieh Hsieh

发明人： Cheng-Chieh Hsieh

IPC分类号： G06K19/06

CPC分类号： H05K5/0278 ,  H05K5/026 ,  Y10T29/49069

摘要： A data storage device, a stacking method thereof, and a data storage device assembly are provided. The data storage device assembly includes a first data storage device and a second data storage device respectively having a body, a magnetic element, and a storage device. Each body has a first containing space and a second containing space. Each magnetic element is disposed in the corresponding first containing space. At least one of the magnetic elements of the first and the second data storage device is a magnet. Each storage device is disposed in the corresponding second containing space and includes an electrical connector terminal, a memory chip, and a memory controller with no crystal oscillator. The magnetic elements of the first and the second data storage device attract each other so that the body of the first data storage device is stacked on the body of the second data storage device.

摘要翻译： 提供了数据存储装置，其堆叠方法和数据存储装置组件。 数据存储装置组件包括分别具有主体，磁性元件和存储装置的第一数据存储装置和第二数据存储装置。 每个主体具有第一容纳空间和第二容纳空间。 每个磁性元件设置在相应的第一容纳空间中。 第一和第二数据存储装置的至少一个磁性元件是磁体。 每个存储装置设置在对应的第二容纳空间中，并且包括电连接器端子，存储芯片和不具有晶体振荡器的存储器控​​制器。 第一和第二数据存储装置的磁性元件彼此吸引，使得第一数据存储装置的主体堆叠在第二数据存储装置的主体上。

公开(公告)号：US08664760B2

公开(公告)日：2014-03-04

申请号：US13343582

申请日：2012-01-04

申请人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Cheng-Chieh Hsieh ,  Kuo-Ching Hsu ,  Ying-Ching Shih ,  Po-Hao Tsai ,  Chin-Fu Kao ,  Cheng-Lin Huang ,  Jing-Cheng Lin

发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Cheng-Chieh Hsieh ,  Kuo-Ching Hsu ,  Ying-Ching Shih ,  Po-Hao Tsai ,  Chin-Fu Kao ,  Cheng-Lin Huang ,  Jing-Cheng Lin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/04 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05184 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10145 ,  H01L2224/10156 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11831 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/13578 ,  H01L2224/13686 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/3651 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2924/00

摘要： A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.

公开(公告)号：US20140015106A1

公开(公告)日：2014-01-16

申请号：US13546218

申请日：2012-07-11

申请人： Cheng-Chieh Hsieh ,  Way Lee Cheng ,  Shang-Yun Hou ,  Shin-Puu Jeng

发明人： Cheng-Chieh Hsieh ,  Way Lee Cheng ,  Shang-Yun Hou ,  Shin-Puu Jeng

IPC分类号： H01L23/34

CPC分类号： H01L23/427 ,  H01L21/563 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/562 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/06589

摘要： One or more heat pipes are utilized along with a substrate in order to provide heat dissipation through the substrate for heat that can build up at an interface between the substrate and one or more semiconductor chips in a package. In an embodiment the heat pipe may be positioned on a side of the substrate opposite the semiconductor chip and through-substrate vias may be utilized to dissipate heat through the substrate. In an alternative embodiment, the heat pipe may be positioned on a same side of the substrate as the semiconductor chip and may be thermally connected to the one or more semiconductor chips.

摘要翻译： 一个或多个热管与衬底一起使用，以便提供通过衬底的热量，其可以在衬底和封装中的一个或多个半导体芯片之间的界面处积聚。 在一个实施例中，热管可以位于与半导体芯片相对的一侧的衬底上，并且通孔衬底可以用于通过衬底散热。 在替代实施例中，热管可以位于与半导体芯片相同的衬底侧上，并且可以热连接到一个或多个半导体芯片。