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    METHODS FOR FABRICATION OF SEMICONDUCTOR STRUCTURES INCLUDING INTERPOSERS WITH CONDUCTIVE VIAS, AND RELATED STRUCTURES AND DEVICES
    5.
    发明申请
    METHODS FOR FABRICATION OF SEMICONDUCTOR STRUCTURES INCLUDING INTERPOSERS WITH CONDUCTIVE VIAS, AND RELATED STRUCTURES AND DEVICES 有权
    用于制造包括导电VIAS的间隔器的半导体结构的方法以及相关的结构和器件

    公开(公告)号：US20130214423A1

    公开(公告)日：2013-08-22

    申请号：US13397954

    申请日：2012-02-16

    Applicant: Mariam Sadaka

    Inventor： Mariam Sadaka

    IPC: H01L23/522 ,  H01L21/762

    CPC classification number: H01L21/486 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/16

    Abstract: Methods of fabricating semiconductor devices that include interposers include the formation of conductive vias through a material layer on a recoverable substrate. A carrier substrate is bonded over the material layer, and the recoverable substrate is then separated from the material layer to recover the recoverable substrate. A detachable interface may be provided between the material layer and the recoverable substrate to facilitate the separation. Electrical contacts that communicate electrically with the conductive vias may be formed over the material layer on a side thereof opposite the carrier substrate. Semiconductor structures and devices are formed using such methods.

    Abstract translation: 制造包括插入件的半导体器件的方法包括通过可恢复衬底上的材料层形成导电通孔。 载体衬底接合在材料层上，然后将可回收衬底与材料层分离以回收可回收衬底。 可以在材料层和可回收衬底之间设置可拆卸界面，以便于分离。 与导电通孔电连通的电触点可以在与载体衬底相对的一侧上的材料层上形成。 使用这种方法形成半导体结构和器件。

    BONDED SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME
    7.
    发明申请
    BONDED SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME 有权
    粘结半导体结构及其形成方法

    公开(公告)号：US20130015442A1

    公开(公告)日：2013-01-17

    申请号：US13637565

    申请日：2011-02-22

    Applicant: Carlos Mazure ,  Bich-Yen Nguyen ,  Mariam Sadaka

    Inventor： Carlos Mazure ,  Bich-Yen Nguyen ,  Mariam Sadaka

    IPC: H01L29/04 ,  H01L29/06 ,  H01L21/302

    CPC classification number: H01L27/0688 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/187 ,  H01L21/8221 ,  H01L2924/00011 ,  H01L2224/80001

    Abstract: Methods of forming semiconductor structures include transferring a portion (116a) of a donor structure to a processed semiconductor structure (102) that includes at least one non-planar surface. An amorphous film (144) may be formed over at least one non-planar surface of the bonded semiconductor structure, and the amorphous film may be planarized to form one or more planarized surfaces. Semiconductor structures include a bonded semiconductor structure having at least one non-planar surface, and an amorphous film disposed over the at least one non-planar surface. The bonded semiconductor structure may include a processed semiconductor structure and a portion of a single crystal donor structure attached to a non-planar surface of the processed semiconductor structure.

    Abstract translation: 形成半导体结构的方法包括将施主结构的部分（116a）转移到包括至少一个非平面表面的经处理的半导体结构（102）。 可以在结合的半导体结构的至少一个非平面表面上形成非晶膜（144），并且可以将非晶膜平坦化以形成一个或多个平坦化表面。 半导体结构包括具有至少一个非平面表面的键合半导体结构和设置在所述至少一个非平面表面上的非晶膜。 键合的半导体结构可以包括处理的半导体结构和附接到处理的半导体结构的非平面表面的单晶体施主结构的一部分。

    Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the same
    8.
    发明授权
    Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the same 有权
    包括绝缘体上半导体区域的混合半导体衬底及其制造方法

    公开(公告)号：US08058158B2

    公开(公告)日：2011-11-15

    申请号：US12726800

    申请日：2010-03-18

    Applicant: Konstantin Bourdelle ,  Bich-Yen Nguyen ,  Mariam Sadaka

    Inventor： Konstantin Bourdelle ,  Bich-Yen Nguyen ,  Mariam Sadaka

    IPC: H01L21/425 ,  H01L21/70

    CPC classification number: H01L21/2007 ,  H01L21/187 ,  H01L21/26513 ,  H01L21/823412 ,  H01L21/823481 ,  H01L27/1207

    Abstract: A method for manufacturing a hybrid semiconductor substrate comprises the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOI) region, that comprises an insulating layer over a base substrate and a SeOI layer over the insulating layer, and a bulk semiconductor region, wherein the SeOI region and the bulk semiconductor region share the same base substrate; (b) providing a mask layer over the SeOI region; and (c) forming a first impurity level by doping the SeOI region and the bulk semiconductor region simultaneously such that the first impurity level in the SeOI region is contained within the mask. Thereby, a higher number of process steps involved in the manufacturing process of hybrid semiconductor substrates may be avoided.

    Abstract translation: 一种用于制造混合半导体衬底的方法包括以下步骤：（a）提供包括绝缘体上半导体（SeOI）区域的混合半导体衬底，其包括在基底衬底上的绝缘层和绝缘层上的SeOI层， 以及体半导体区域，其中所述SeOI区域和所述体半导体区域共享相同的基底基板; （b）在SeOI区域上提供掩模层; 和（c）通过同时掺杂SeOI区域和体半导体区域使得SeOI区域中的第一杂质水平包含在掩模内而形成第一杂质水平。 因此，可以避免在混合半导体衬底的制造过程中涉及的更多数量的工艺步骤。

    SEMICONDUCTOR DEVICE STRUCTURE AND METHOD THEREFOR
    10.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURE AND METHOD THEREFOR 有权
    半导体器件结构及其方法

    公开(公告)号：US20070235807A1

    公开(公告)日：2007-10-11

    申请号：US11742955

    申请日：2007-05-01

    Applicant: Ted White ,  Alexander Barr ,  Bich-Yen Nguyen ,  Marius Orlowski ,  Mariam Sadaka ,  Voon-Yew Thean

    Inventor： Ted White ,  Alexander Barr ,  Bich-Yen Nguyen ,  Marius Orlowski ,  Mariam Sadaka ,  Voon-Yew Thean

    IPC: H01L29/786

    CPC classification number: H01L29/78696 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/045 ,  H01L29/66772

    Abstract: Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and an overlying layer of the other crystal orientation. The underlying layer has a portion exposed on which is epitaxially grown an oxygen-doped semiconductor layer that maintains the crystalline structure of the underlying semiconductor layer. A semiconductor layer is then epitaxially grown on the oxygen-doped semiconductor layer. An oxidation step at elevated temperatures causes the oxide-doped region to separate into oxide and semiconductor regions. The oxide region is then used as an insulation layer in an SOI structure and the overlying semiconductor layer that is left is of the same crystal orientation as the underlying semiconductor layer. Transistors of the different types are formed on the different resulting crystal orientations.

    Abstract translation: 在不同的晶体取向上制作了两种不同的晶体管类型，其中两者都形成在SOI上。 衬底具有晶体取向之一的底层半导体层和另一晶体取向的上覆层。 底层具有暴露在其上的部分外延生长保持下面的半导体层的晶体结构的氧掺杂半导体层。 然后在氧掺杂半导体层上外延生长半导体层。 在高温下的氧化步骤使得氧化物掺杂区域分离成氧化物和半导体区域。 然后将氧化物区域用作SOI结构中的绝缘层，并且剩下的上覆半导体层具有与下面的半导体层相同的晶体取向。 不同类型的晶体管形成在不同的结晶取向上。

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