公开(公告)号：US20050139644A1

公开(公告)日：2005-06-30

申请号：US11020406

申请日：2004-12-22

Applicant: Nathaniel Brese ,  Michael Toben

Inventor： Nathaniel Brese ,  Michael Toben

IPC: H01L23/10 ,  B23K31/02 ,  B23K35/02 ,  B23K35/26 ,  B23K35/30 ,  G02B6/42 ,  H01L21/52 ,  H01L23/12 ,  H01L23/28 ,  H01L23/48 ,  H05K1/18 ,  H05K3/34

CPC classification number: B23K35/025 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/3013 ,  B23K2103/52 ,  B23K2103/54 ,  G02B6/4202

Abstract: Disclosed are methods of forming an electronic device. The methods involve (a) providing a substrate and a component to be bonded to the substrate, wherein the component is chosen from an electronic component, an optical component, a device lid, and a combination thereof; (b) applying solder paste to the substrate and/or the component, wherein the solder paste includes a carrier vehicle and a metal portion with metal particles; and (c) bringing the substrate and the component into contact with each other. The solder paste has a solidus temperature lower than the solidus temperature that would result after melting of the solder paste and re-solidification of the melt. Also provided are electronic devices which can be formed by the inventive methods. Particular applicability can be found in the electronics industry in the formation of hermetic electronic device packages, for example, hermetic optoelectronic device packages, formed from semiconductor wafers.

Abstract translation: 公开了形成电子设备的方法。 所述方法包括（a）提供衬底和要结合到衬底的部件，其中所述部件选自电子部件，光学部件，器件盖及其组合; （b）将焊膏施加到基板和/或部件上，其中焊膏包括载体载体和具有金属颗粒的金属部分; 和（c）使基板和部件彼此接触。 焊膏的固相线温度低于焊膏熔化后的固相线温度和熔体的再凝固。 还提供了可以通过本发明的方法形成的电子设备。 在电子工业中可以发现形成密封电子器件封装的特殊适用性，例如由半导体晶片形成的密封光电器件封装。

公开(公告)号：US20050133572A1

公开(公告)日：2005-06-23

申请号：US11022235

申请日：2004-12-22

Applicant: Nathaniel Brese ,  Michael Toben

Inventor： Nathaniel Brese ,  Michael Toben

IPC: H01L21/60 ,  B23K3/06 ,  B23K31/02 ,  H05K3/00 ,  H05K3/12 ,  H05K3/34 ,  H05K13/04

CPC classification number: B23K3/0638 ,  B23K2101/40 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0257 ,  H05K2203/043 ,  H01L2924/00 ,  H01L2924/00014

Abstract: Disclosed are methods of forming solder areas on electronic components. The methods involve: (a) providing a substrate having one or more contact pads; and (b) applying a solder paste over the contact pads. The solder paste includes a carrier vehicle and a metal component having metal particles. The solder paste has a solidus temperature lower than the solidus temperature that would result after melting of the solder paste and resolidification of the melt. Also provided are electronic components which can be formed by the inventive methods. Particular applicability can be found in the semiconductor industry in the formation of interconnect bumps on a semiconductor component, for example, for bonding an integrated circuit to a module circuit or printed wiring board using a bump bonding process.

Abstract translation: 公开了在电子部件上形成焊料区域的方法。 所述方法包括：（a）提供具有一个或多个接触垫的基底; 和（b）将焊膏涂覆在接触垫上。 焊膏包括载体载体和具有金属颗粒的金属组分。 焊膏的固相线温度低于焊膏熔化后的固相线温度和熔融物的再凝固。 还提供了可以通过本发明的方法形成的电子部件。 在半导体工业中，在形成半导体部件上的互连凸点的情况下，可以发现具体的适用性，例如，使用凸块接合工艺将集成电路与模块电路或印刷线路板接合。

公开(公告)号：US20060153990A1

公开(公告)日：2006-07-13

申请号：US11287672

申请日：2005-11-28

Applicant: Peter Levey ,  Nathaniel Brese ,  Neil Brown ,  Stanley Jasne

Inventor： Peter Levey ,  Nathaniel Brese ,  Neil Brown ,  Stanley Jasne

IPC: B05D1/36 ,  B01J31/00

CPC classification number: C23C18/1837 ,  C08G59/68 ,  C23C18/1651 ,  C23C18/2033 ,  C23C18/206 ,  C23C18/2066 ,  C23C18/31 ,  C25D5/54 ,  C25D5/56 ,  H05K3/185 ,  H05K3/387 ,  Y10T428/25

Abstract: UV curable compositions and methods for depositing one or more metal or metal alloy films on substrates are disclosed. The UV curable compositions contain a catalyst, one or more carrier particles, one or more UV curing agents, and one or more water-soluble or water-dispersible organic compounds. Metal or metal alloys may be deposited on the substrates by electroless or electrolytic deposition.

公开(公告)号：US20050025960A1

公开(公告)日：2005-02-03

申请号：US10875254

申请日：2004-06-24

Applicant: Peter Levey ,  Nathaniel Brese

Inventor： Peter Levey ,  Nathaniel Brese

IPC: B01J23/58 ,  B01J23/38 ,  B01J23/66 ,  B01J23/70 ,  B01J23/72 ,  B01J23/89 ,  B01J29/76 ,  B01J31/12 ,  B01J35/00 ,  B01J37/02 ,  B01J37/16 ,  C23C18/12 ,  C23C18/16 ,  C23C18/18 ,  C23C18/20 ,  C23C18/30 ,  C25D5/54 ,  C25D7/06 ,  H01B5/14 ,  B01J31/00 ,  B01J23/00 ,  B01J23/02 ,  B01J23/42 ,  B32B9/00

CPC classification number: C23C18/206 ,  B01J23/38 ,  B01J23/66 ,  B01J23/70 ,  B01J23/72 ,  B01J23/8946 ,  B01J35/0013 ,  B01J35/0033 ,  B01J37/0219 ,  B01J37/0228 ,  B01J37/16 ,  C23C18/1608 ,  C23C18/1879 ,  C23C18/30 ,  Y10T428/265

Abstract: Compositions and methods for depositing one or more metal or metal alloy films on substrates. The compositions contain a catalyst, one or more carrier particles and one or more water-soluble or water-dispersible organic compounds. Metal or metal alloys may be deposited on the substrates by electroless or electrolytic deposition.

Abstract translation: 用于在基底上沉积一种或多种金属或金属合金膜的组合物和方法。 组合物含有催化剂，一种或多种载体颗粒和一种或多种水溶性或水分散性有机化合物。 金属或金属合金可以通过化学镀或电解沉积沉积在基板上。

公开(公告)号：US20060167174A1

公开(公告)日：2006-07-27

申请号：US11387669

申请日：2006-03-23

Applicant: Angelo Lamola ,  Nathaniel Brese

Inventor： Angelo Lamola ,  Nathaniel Brese

IPC: C08L9/00 ,  H01L21/50

CPC classification number: H01L21/563 ,  H01L23/293 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/351 ,  Y10T428/31855 ,  Y10T428/31931 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/0401

Abstract: Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.

Abstract translation: 提供适合用作集成电路组件中的底部填充材料的组合物。 还提供了制备包含某些底部填充材料的集成电路组件以及包含这种集成电路组件的电子设备的方法。

公开(公告)号：US20070128837A1

公开(公告)日：2007-06-07

申请号：US11607632

申请日：2006-12-01

Applicant: Jitendra Goela ,  Nathaniel Brese ,  Michael Pickering

Inventor： Jitendra Goela ,  Nathaniel Brese ,  Michael Pickering

IPC: H01L21/20 ,  H01L21/00

CPC classification number: C30B31/10 ,  C23C16/4404 ,  C23C16/4581 ,  C30B29/36 ,  C30B33/005 ,  C30B33/10 ,  C30B35/00

Abstract: Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.

Abstract translation: 公开了提供减少产生颗粒的碳化硅的方法。 碳化硅制品可用作用于处理半导体晶片的装置中的组成部分。 在半导体处理期间减少的颗粒产生减少对半导体晶片的污染，从而提高其产量。

公开(公告)号：US20050191515A1

公开(公告)日：2005-09-01

申请号：US11113680

申请日：2005-04-25

Applicant: Nathaniel Brese ,  Garo Khanarian ,  Craig Allen

Inventor： Nathaniel Brese ,  Garo Khanarian ,  Craig Allen

IPC: B32B15/02 ,  C01G25/00 ,  C01G25/02 ,  C01G41/00 ,  C04B35/48 ,  C04B35/495 ,  C09C1/00

CPC classification number: C04B35/495 ,  B82Y30/00 ,  C01G25/00 ,  C01G25/02 ,  C01G41/00 ,  C01P2004/64 ,  C04B35/48 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3258 ,  C04B2235/44 ,  C04B2235/443 ,  C04B2235/449 ,  C04B2235/80 ,  C04B2235/9607 ,  C09C1/00 ,  Y10T428/12611 ,  Y10T428/12618

Abstract: Disclosed are composites having very low coefficients of thermal expansion and methods of preparing the composites. Also disclosed are composites having negative coefficients of thermal expansion. Applications of the composites to a wide variety of uses, such as electronic and optoelectronic devices are also disclosed.

Abstract translation: 公开了具有非常低的热膨胀系数和制备复合材料的方法的复合材料。 还公开了具有负的热膨胀系数的复合材料。 还公开了将复合材料应用于各种用途，例如电子和光电子器件。

公开(公告)号：US20050165169A1

公开(公告)日：2005-07-28

申请号：US11021041

申请日：2004-12-23

Applicant: Peter Levey ,  Stanley Jasne ,  Neil Brown ,  Nathaniel Brese

Inventor： Peter Levey ,  Stanley Jasne ,  Neil Brown ,  Nathaniel Brese

IPC: C09J183/00 ,  C08F8/00 ,  C08G63/695 ,  C08G65/336 ,  C08K3/00 ,  C08K5/00 ,  C08L9/00 ,  C08L13/00 ,  C08L63/00 ,  C08L67/00 ,  C08L101/06 ,  C08L101/10 ,  C09D167/00 ,  C09J9/02 ,  C09J113/00 ,  C09J123/00 ,  C09J123/20 ,  C09J167/00 ,  C09J171/00 ,  C09J171/02 ,  C09J175/00 ,  C09J175/04 ,  C09K3/00 ,  F16J15/06 ,  F16J15/10 ,  F16J15/14 ,  H05K9/00

CPC classification number: C08L25/10 ,  C08G63/695 ,  C08G65/336 ,  C08K3/013 ,  C08K5/0008 ,  C08L9/00 ,  C08L13/00 ,  C08L63/00 ,  C08L67/00 ,  C08L101/06 ,  C08L101/10 ,  C08L2666/02 ,  C09D167/00 ,  C09J9/02 ,  C09J171/02 ,  F16J15/064 ,  F16J15/102 ,  F16J15/14 ,  H05K9/0015 ,  C08L2666/14 ,  C08L2666/04 ,  C08L2666/08

Abstract: A composition is provided which includes at least one silyl-terminated polymer, at least one polymer with anhydride functionalities, acid functionalities or combinations thereof, and one or more catalysts.

Abstract translation: 提供了一种组合物，其包括至少一种甲硅烷基封端的聚合物，至少一种具有酸酐官能团的聚合物，酸官能团或其组合以及一种或多种催化剂。

公开(公告)号：US20050000412A1

公开(公告)日：2005-01-06

申请号：US10909667

申请日：2004-08-02

Applicant: Nathaniel Brese ,  Jitendra Goela ,  Michael Pickering

Inventor： Nathaniel Brese ,  Jitendra Goela ,  Michael Pickering

IPC: C01B31/36 ,  C04B35/565 ,  C23C16/32 ,  C23C16/42 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C23C16/325 ,  C04B35/565

Abstract: A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Abstract translation: 化学气相沉积，β相多晶碳化硅具有高导热性和减少堆垛层错。 使用氢气和甲基三氯硅烷气体作为反应物，在特定条件下合成碳化硅。 碳化硅的热导率足够高，使得其可以用作产生高热负荷的电气装置的装置和部件的部件。 这些组件可以包括有源热电冷却器，散热器和风扇。