公开(公告)号：US11688612B2

公开(公告)日：2023-06-27

申请号：US15846014

申请日：2017-12-18

申请人： STATS ChipPAC Pte. Ltd.

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo ,  HeeJo Chi

IPC分类号： H01L21/56 ,  H01L21/683 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L25/16 ,  H01L23/552

CPC分类号： H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L23/552 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/05552 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/45015 ,  H01L2224/4816 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48158 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2924/014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/0105 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/1532 ,  H01L2924/15151 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/3025 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/97 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2224/16225 ,  H01L2924/13091 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/0002 ,  H01L2224/05552 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.

公开(公告)号：US20170018507A1

公开(公告)日：2017-01-19

申请号：US15280632

申请日：2016-09-29

申请人： STATS ChipPAC Pte. Ltd.

发明人： Reza A. Pagaila ,  Flynn Carson ,  Seung Uk Yoon

IPC分类号： H01L23/552 ,  H01L23/528 ,  H01L21/56 ,  H01L23/06 ,  H01L23/00 ,  H01L21/48 ,  H01L25/065 ,  H01L23/10

CPC分类号： H01L23/552 ,  H01L21/4871 ,  H01L21/561 ,  H01L21/568 ,  H01L23/06 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/5286 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/95 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/115 ,  H01L2223/6677 ,  H01L2224/02166 ,  H01L2224/0217 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/215 ,  H01L2224/221 ,  H01L2224/73253 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2225/06524 ,  H01L2225/06537 ,  H01L2225/06548 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down to the interface layer. A conductive material is deposited in the channel and electrically connected to the shielding layer. The interface layer and carrier are removed. An interconnect structure is formed over conductive material, encapsulant, and first die. The conductive material is electrically connected through the interconnect structure to a ground point. The conductive material is singulated to separate the first die. A second semiconductor die can be mounted over the first die such that the shielding layer covers the second die and the conductive material surrounds the second die or the first and second die.

摘要翻译： 半导体器件具有安装在形成在临时载体上的界面层上的多个第一半导体管芯。 密封剂沉积在第一模具和载体上。 在密封剂上形成平坦的屏蔽层。 通过屏蔽层和密封剂形成通道，直到界面层。 导电材料沉积在通道中并电连接到屏蔽层。 界面层和载体被去除。 在导电材料，密封剂和第一模具上形成互连结构。 导电材料通过互连结构电连接到接地点。 将导电材料分开以分离第一模具。 可以将第二半导体管芯安装在第一管芯上，使得屏蔽层覆盖第二管芯，并且导电材料围绕第二管芯或第一和第二管芯。

公开(公告)号：US20170062390A1

公开(公告)日：2017-03-02

申请号：US15349838

申请日：2016-11-11

申请人： STATS ChipPAC Pte. Ltd.

发明人： Linda Pei Ee Chua ,  Byung Tai Do ,  Reza A. Pagaila

IPC分类号： H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L23/498 ,  H01L21/78 ,  H01L21/288 ,  H01L21/768 ,  H01L21/56 ,  H01L23/31 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/288 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76879 ,  H01L21/76885 ,  H01L21/78 ,  H01L23/13 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/52 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/17 ,  H01L24/19 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/50 ,  H01L29/40 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/20 ,  H01L2224/2518 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32502 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/82 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant over the first semiconductor die. The recess has sloped or stepped sides. A first interconnect structure is formed over the first surface of the encapsulant. The first interconnect structure follows a contour of the recess in the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant and first semiconductor die. The first and second interconnect structures are electrically connected to the conductive pillars. A second semiconductor die is mounted in the recess. A third semiconductor die is mounted over the recess and second semiconductor die.

摘要翻译： 半导体器件具有在载体上形成的导电柱。 第一半导体管芯安装在载体之间的导电柱之间。 密封剂沉积在第一半导体管芯和载体上并且围绕导电柱。 在第一半导体管芯上的密封剂的第一表面中形成凹部。 凹槽有倾斜或阶梯。 在密封剂的第一表面上形成第一互连结构。 第一互连结构遵循密封剂中的凹部的轮廓。 载体被移除。 在密封剂和第一半导体管芯的第二表面上形成第二互连结构。 第一和第二互连结构电连接到导电柱。 第二半导体管芯安装在凹槽中。 第三半导体管芯安装在凹槽和第二半导体管芯上。

公开(公告)号：US20180108542A1

公开(公告)日：2018-04-19

申请号：US15846014

申请日：2017-12-18

申请人： STATS ChipPAC Pte. Ltd.

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo ,  HeeJo Chi

IPC分类号： H01L21/56

CPC分类号： H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48158 ,  H01L2224/4816 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.