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    Flux Residue Cleaning System and Method
    3.
    发明申请
    Flux Residue Cleaning System and Method 审中-公开
    助焊剂残渣清洗系统及方法

    公开(公告)号：US20140332033A1

    公开(公告)日：2014-11-13

    申请号：US14444488

    申请日：2014-07-28

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： I-Ting Chen ,  Jing-Cheng Lin ,  Szu Wei Lu ,  Ying-Ching Shih

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02041 ,  H01L21/4864 ,  H01L21/67028 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2224/0401

    摘要： A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

    摘要翻译： 助焊剂残渣清洁系统包括第一和第二浸没室，第一和第二喷雾室以及干燥室。 当晶片浸入第一化学品中时，第一浸入室软化在介于晶片和管芯之间的微胶片周围形成的焊剂残余物的外部区域。 当晶片通过第一化学喷雾撞击以暴露焊剂残留物的内部区域时，第一喷雾室除去焊剂残余物的外部区域。 当晶片浸入第二种化学品中时，第二浸入室软化助焊剂残余物的内部区域。 当晶片被第二化学喷雾冲击时，第二喷雾室去除焊剂残余物的内部区域，以将晶片清洁至预定的标准。 干燥室干燥晶片。

    Semiconductor package
    6.
    发明授权
    Semiconductor package 有权

    公开(公告)号：US10090253B2

    公开(公告)日：2018-10-02

    申请号：US15811067

    申请日：2017-11-13

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Jing-Cheng Lin ,  Po-Hao Tsai ,  Ying Ching Shih ,  Szu Wei Lu

    IPC分类号： H01L23/48 ,  H01L23/538 ,  H01L25/00 ,  H01L25/10 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/00

    摘要： The present disclosure provides a manufacturing method of a semiconductor packaging, including forming a redistribution layer (RDL) on a carrier, defining an active portion and a dummy portion of the RDL, and placing a semiconductor die over the dummy portion of the RDL. The present disclosure also provides a manufacturing method of a package-on-package (PoP) semiconductor structure, including forming a first redistribution layer (RDL) on a polymer-based layer of a carrier, defining an active portion and a dummy portion of the first RDL, placing a semiconductor die over the dummy portion of the first RDL, a back side of the semiconductor die facing the first RDL, forming a second RDL over a front side of the semiconductor die, the front side having at least one contact pad, and attaching a semiconductor package at the back side of the semiconductor die.