摘要:
A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device has a via-hole formed through the first semiconductor device, wherein the via-hole has a first opening adjacent to the first side; an interconnection structure disposed in the first semiconductor device, wherein the interconnection structure includes: a via structure disposed in the via-hole without exceeding the first opening; a first pad disposed on the first side of the first semiconductor device and covering the via-hole; and a second semiconductor device vertically integrated with the first semiconductor device.
摘要:
A semiconductor device includes an electrode including a plurality of pillars, a semiconductor element configured to be electrically-connected with the electrode, a substrate having electrode patterns, and a conductive adhesive layer located between the substrate and the electrode, the conductive adhesive layer including conductive substances configured to electrically-connect the pillars and the electrode patterns to each other, and including a body which encloses the conductive substances.
摘要:
Consistent with an example embodiment, there is an integrated circuit (IC) device in a packaging having electrically insulated connections. The IC device comprises a semiconductor device (100) mounted onto a die attachment area (10); the semiconductor device has a plurality of bonding pads (20a, 25a, 30a, 35a). A lead frame having a plurality of bonding fingers (20b, 25b, 30b, 35b) surrounds the die attachment area. A plurality of mutually isolated connection conductors (25d, 30d, 40, 50) having respective first ends are attached to respective bonding pads on the semiconductor device and the plurality of mutually isolated connection conductors having respective second respective second ends are attached to respective bonding fingers of the lead frame. An insulating material (45) coats at least a portion of the plurality of mutually isolated connection conductors. The mutually isolated connection conductors may include a bond wire (40, 50) for the signal connection and a conductive strap (25d, 30d) for the voltage reference connection. The insulating material (45) coating the bond wires reduces the likelihood of short circuits during encapsulation.
摘要:
A microelectronic package includes first and second encapsulated microelectronic elements, each of which includes a semiconductor die having a front face and contacts thereon. An encapsulant contacts at least an edge surface of each semiconductor die and extends in at least one lateral direction therefrom. Electrically conductive elements extend from the contacts and over the front face to locations overlying the encapsulant. The first and second microelectronic elements are affixed to one another such that one of the front or back surfaces of one of the first and second semiconductor dies is oriented towards one of the front or back surfaces of the other of the first and second semiconductor dies. A plurality of electrically conductive interconnects extend through the encapsulants of the first and second microelectronic elements and are electrically connected with at least one semiconductor die of the first and second microelectronic elements by the conductive elements.
摘要:
A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device has a via-hole formed through the first semiconductor device, wherein the via-hole has a first opening adjacent to the first side; an interconnection structure disposed in the first semiconductor device, wherein the interconnection structure includes: a via structure disposed in the via-hole without exceeding the first opening; a first pad disposed on the first side of the first semiconductor device and covering the via-hole; and a second semiconductor device vertically integrated with the first semiconductor device.
摘要:
The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conductive layers (29A, 29B); and moving the laser source and the substrate with respect to each other at a predetermined velocity and path so that a structurally modified zone is formed to the interface zone, the structurally modified zone overlapping with said electrical contacting zone and said substrate fusing zone. The invention provides a convenient way of manufacturing well-sealed joints and electrical contacts for multifunction electronic devices, for example.
摘要:
An integrated circuit comprises a lead frame portion having a plurality of leads; a first current conductor portion comprising at least two of the plurality of leads; a substrate having first and second opposing surfaces, the first surface proximate to said first current conductor portion and the second surface distal from said first current conductor portion; one or more magnetic field transducers disposed on the first surface of said substrate; and a second current conductor portion deposited on the first surface of the substrate, disposed proximate to the one or more magnetic field transducers, and coupled to the first current conductor portion.
摘要:
The invention relates to a method for contacting microchips, whereby an adhesive agent is applied to a side of a substrate on which a strip conductor is arranged, and/or to a side of a microchip on which at least one bump is situated, in such a way that a liquid layer of the adhesive agent is formed on the same. After the microchip has been adjusted in such a way that the at least one bump is situated over a pre-determined position on the strip conductor of the substrate, a pressure contact is established between the at least one bump and the pre-determined position by exerting pressure between the microchip and the substrate, said adhesive agent then being hardened.
摘要:
According to a typical invention of the inventions disclosed in the present application, a semiconductor chip with an electronic circuit formed therein is fixed to a die pad for a lead frame having projections formed on the back thereof, with an organic dies bonding agent. Pads on the semiconductor chip, and inner leads are respectively electrically connected to one another by metal thin lines. These portions are sealed with a molding resin. Further, each inner lead extends to the outside of the molding resin and is processed into gull-wing form for substrate mounting. Moreover, the inner lead is processed by soldering so that an external terminal is formed. Thus, since the projections are provided on the back of the die pad, the back of a packing material is brought into point contact with that of the die pad as compared with the conventional face-to-face contact. It is therefore possible to minimize the transfer of organic substances from the packing material. Further, since such transfer that a reduction in adhesive property occurs in the back of the die pad, is greatly reduced, the adhesiveness between the upper surface of the die pad and the molding resin is improved, whereby the resistance of SMD to the reflow is enhanced.
摘要:
A semiconductor device includes a metallic electrode (4) formed on a semiconductor substrate (1), and a metallic terminal (11E) formed on a metal base through an insulating material, in parallel to the metal electrode (4). A metallic wire (12) electrically connects the metallic electrode to the metallic terminal. In a metallic conductor (23) having a current capacity larger than that of the metallic wire, one end is in contact with the metallic electrode, and the other end is in contact with the metallic electrode.