Patent search cpc:"H01L2224/81208" Page 1

1.

发明专利
室温金属直接ボンディング有权

公开(公告)号：JP6396386B2

公开(公告)日：2018-09-26

申请号：JP2016200348

申请日：2016-10-11

Applicant: インベンサス・ボンディング・テクノロジーズ・インコーポレイテッド , Invensas Bonding Technologies,Inc.

Inventor： チン−イ・トン , ポール・エム.・エンクィスト , アンソニー・スコット・ローズ

IPC: B23K20/00 , H01L21/02

CPC classification number: H01L21/76251 , B23K20/02 , H01L21/481 , H01L24/09 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/28 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/89 , H01L24/90 , H01L25/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/13011 , H01L2224/13099 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/32145 , H01L2224/80801 , H01L2224/81011 , H01L2224/81013 , H01L2224/81014 , H01L2224/81136 , H01L2224/81143 , H01L2224/81193 , H01L2224/81208 , H01L2224/8121 , H01L2224/81801 , H01L2224/81815 , H01L2224/8183 , H01L2224/81894 , H01L2224/83095 , H01L2224/8319 , H01L2224/8334 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/8385 , H01L2224/83894 , H01L2224/83895 , H01L2224/83907 , H01L2224/9202 , H01L2225/06513 , H01L2924/00013 , H01L2924/01003 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/1532 , H01L2924/351 , Y10T29/49126 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/05644 , H01L2924/00014 , H01L2224/05664 , H01L2224/05669 , H01L2224/05124 , H01L2224/05147

2.

发明专利
室温金属直接ボンディング审中-公开

公开(公告)号：JP2017112383A

公开(公告)日：2017-06-22

申请号：JP2017006744

申请日：2017-01-18

Applicant: ジプトロニクス・インコーポレイテッド

Inventor： チン−イ・トン , ポール・エム.・エンクィスト , アンソニー・スコット・ローズ

IPC: H01L25/065 , H01L25/07 , H01L25/18 , H01L21/60 , B23K20/00 , H01L21/02

CPC classification number: H01L21/76251 , B23K20/02 , H01L21/481 , H01L24/09 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/89 , H01L24/90 , H01L25/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/13011 , H01L2224/13099 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/32145 , H01L2224/80801 , H01L2224/81011 , H01L2224/81013 , H01L2224/81014 , H01L2224/81136 , H01L2224/81143 , H01L2224/81193 , H01L2224/81208 , H01L2224/8121 , H01L2224/81801 , H01L2224/81815 , H01L2224/8183 , H01L2224/81894 , H01L2224/83095 , H01L2224/8319 , H01L2224/8334 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/8385 , H01L2224/83894 , H01L2224/83895 , H01L2224/83907 , H01L2224/9202 , H01L2225/06513 , H01L24/28 , H01L2924/00013 , H01L2924/01003 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/1532 , H01L2924/351 , Y10T29/49126

Abstract: 【課題】単一のボンディング工程によりウエーハーとダイの間の機械的および電気的接触を獲得すること。【解決手段】ボンディングされたデバイス構造は、デバイスまたは回路に接続された第1の組の金属ボンディングパッド12および第1の基板上の金属ボンディングパッドに隣接する第1の非金属領域11を有する第1の基板10と、デバイスまたは回路に接続された第1の組の金属ボンディングパッドに隣接する第2の組の金属ボンディングパッド15および第2の基板上の金属ボンディングパッドに隣接する第2の非金属領域14を有する第2の基板13並びに第2の非金属領域に対して第1の非金属領域を接触ボンディングさせることにより形成される第1と第2の組の金属ボンディングパッドの間の接触ボンディングされた界面を含む。第1と第2の基板の少なくとも一方は、弾性的に変形され得る。【選択図】図1A

3.

发明专利
フリップチップ接合方法、および当該フリップチップ接合方法を含むことを特徴とする固体撮像装置の製造方法审中-公开
Title translation: 倒装芯片接合方法，以及用于制造该固态成像装置的特征在于，包括倒装芯片接合方法的方法

公开(公告)号：JPWO2014077044A1

公开(公告)日：2017-01-05

申请号：JP2014546902

申请日：2013-10-02

Applicant: シャープ株式会社

Inventor： 迫田　直樹 , 直樹迫田

IPC: H01L21/603 , H01L21/607

CPC classification number: H01L27/14683 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L27/14618 , H01L2224/1134 , H01L2224/13111 , H01L2224/13144 , H01L2224/16238 , H01L2224/75251 , H01L2224/75252 , H01L2224/75343 , H01L2224/81047 , H01L2224/8112 , H01L2224/81193 , H01L2224/81205 , H01L2224/81208 , H01L2224/81986 , H01L2924/15787 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00

Abstract: 電子部品素子(1)の電極を、バンプ(2)を介して基板(4)の電極(5)に接合させる際、バンプ(2)のバルク材料の降伏応力以上の第1圧力のみを印加した後、第1圧力の印加を低下もしくは停止し、バンプ(2)に所定の超音波振動を印加して、バンプ(2)のバルク材料の降伏応力以上の第2圧力になるまで圧力を段階的に印加する。

Abstract translation: 电子元件单元的电极（1），当要接合到电极通过（2）（4）（5）施加到仅第一压力比所述凸块的块体材料的屈服应力更高凸点衬底（2）还原后的第一压力的施加或停止时，通过将预定超声波振动凸点（2）中，阶段性地压力，直到第二压力比所述凸块的块体材料的屈服应力（2）高应用到。

4.

发明专利
Semiconductor device and method for forming bump-on-lead interconnection 审中-公开
Title translation: 半导体器件及其形成前导互连的方法

公开(公告)号：JP2012119649A

公开(公告)日：2012-06-21

申请号：JP2011010289

申请日：2011-01-20

Applicant: Stats Chippac Ltd , スタッツチップパックリミテッド

Inventor： RAJENDRA D VANS

IPC: H01L21/60 , H01L21/3205 , H01L21/768 , H01L23/522

CPC classification number: H01L24/17 , H01L21/563 , H01L23/3128 , H01L23/3157 , H01L23/49811 , H01L23/49838 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L33/62 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13016 , H01L2224/13018 , H01L2224/13019 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1411 , H01L2224/16 , H01L2224/1601 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16237 , H01L2224/16238 , H01L2224/17107 , H01L2224/27013 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/75 , H01L2224/75301 , H01L2224/81191 , H01L2224/81193 , H01L2224/81194 , H01L2224/81203 , H01L2224/81208 , H01L2224/81345 , H01L2224/81385 , H01L2224/81801 , H01L2224/83051 , H01L2224/83191 , H01L2224/83192 , H01L2224/83385 , H01L2224/83856 , H01L2224/93 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15787 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2224/13109 , H01L2924/3512 , H01L2924/0665 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/81805

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device.SOLUTION: The method for manufacturing a semiconductor device comprises a step for providing a semiconductor die having a plurality of composite bumps formed on a surface of the semiconductor die, where the plurality of composite bumps have soluble parts and insoluble parts; a step for providing a substrate; a step for forming a plurality of conductive traces on the substrate with an interconnection part having rims in parallel with conductive traces from a plan view for increasing an escape routing density, where the composite bumps have widths being wider than that of the interconnection part; a step for bonding the soluble parts of the composite bumps to the interconnection part so as to cover a top and side surfaces of the interconnection part by the soluble parts; and a step for depositing encapsulation members around the composite bumps between the semiconductor die and the substrate.

Abstract translation: 要解决的问题：提供一种制造半导体器件的方法。解决方案：半导体器件的制造方法包括提供具有形成在半导体管芯的表面上的多个复合凸块的半导体管芯的步骤，其中多个复合凸块具有可溶部分和不溶部分; 提供衬底的步骤; 用于在基板上形成多个导电迹线的步骤，其中互连部分具有从平面图与导电迹线平行的边缘，用于增加逃逸路由密度，其中复合凸块的宽度大于互连部分的宽度; 将复合凸块的可溶部分粘合到互连部分以便通过可溶部分覆盖互连部分的顶表面和侧表面的步骤; 以及用于在半导体管芯和衬底之间的复合凸块周围沉积封装构件的步骤。版权所有（C）2012，JPO＆INPIT

5.

发明专利
Element having an assembly comprising a plurality of rigid conductive microchip, as well, and such a device, a device having a flexible conductive protrusions, the electrical connection method 有权

公开(公告)号：JP4907539B2

公开(公告)日：2012-03-28

申请号：JP2007534063

申请日：2005-09-29

Applicant: コミッサリアアレネルジーアトミークエオゼネルジザルタナテイヴ

Inventor： セシール・ダボワイヌ , フランソワ・マリオン

IPC: H01L21/60

CPC classification number: H05K13/0469 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/1147 , H01L2224/13099 , H01L2224/81193 , H01L2224/81208 , H01L2224/81345 , H01L2224/81801 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H05K3/321 , H05K3/4007 , H05K2201/0367 , H05K2201/0373 , H05K2203/0278 , H01L2224/05599

Abstract: A component and process for making an electrical connection between a first component comprising a set of first pads and a set of hard conducting tips on one face, and a second component comprising a set of second pads and a set of ductile conducting bumps on the other face, in which the two faces are made to face each other and they are brought towards each other such that the tips can penetrate into these bumps, in which the space between two tips is less than the width of a bump and less than the width of a first pad. The process is applicable to such a component on which the set of conducting tips are installed.

6.

发明专利
A method of manufacturing a semiconductor device and a semiconductor device 有权

公开(公告)号：JP4353263B2

公开(公告)日：2009-10-28

申请号：JP2007069190

申请日：2007-03-16

Applicant: セイコーエプソン株式会社

Inventor： 茂久多次見

IPC: H01L21/60

CPC classification number: H05K3/3436 , H01L22/12 , H01L23/13 , H01L23/49838 , H01L24/13 , H01L24/81 , H01L2224/13144 , H01L2224/16 , H01L2224/81191 , H01L2224/81203 , H01L2224/81208 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H05K1/189 , H05K3/326 , H05K3/4092 , H05K2201/0382 , H05K2201/10674 , H05K2203/0278 , Y02P70/613 , H01L2224/0401

Abstract: A method for manufacturing a semiconductor device includes: preparing a wiring board having a base substrate and wiring that is plated on surface with a plating metal; pressing a bump that is formed on the active side of the semiconductor chip against an end part of the wiring of the wiring board, thereby exfoliating the area surrounding the pressed portion of the wiring from the base substrate while keeping the end of the wiring bonded with the base substrate; melting the plating metal that is located on the end part of the wiring, thereby causing the plating metal and the bump to form an alloy that bonds the bump and the wiring and infiltrate the plating metal into a space between the wiring and the base substrate; and judging that the bump and the wiring are well bonded if the plating metal has infiltrated a space between the wiring and the base substrate so as to have an area, width or length of infiltration that exceeds a reference value.