Method for Transferring Semiconductor Bodies and Semiconductor Chip

    公开(公告)号:US20200035855A1

    公开(公告)日:2020-01-30

    申请号:US16488571

    申请日:2018-03-06

    Inventor: Lutz Höppel

    Abstract: A method for transferring semiconductor bodies and a semiconductor chip are disclosed. In an embodiment a method includes providing a semiconductor structure on a growth substrate, arranging a cover layer on a side of the semiconductor structure facing away from the growth substrate, wherein the cover layer is mechanically fixedly connected to the semiconductor structure, arranging a transfer structure on a side of the cover layer facing away from the semiconductor structure, wherein the transfer structure is mechanically fixedly connected to the cover layer via at least one contact structure, wherein a sacrificial layer is arranged between the cover layer and the transfer structure, and wherein the sacrificial layer does not cover any of the at least one contact structure, removing the growth substrate from the semiconductor structure, subdividing the semiconductor structure into a plurality of semiconductor bodies, arranging a carrier on a side of the semiconductor body facing away from the transfer structure, selectively removing the sacrificial layer and removing the transfer structure from the semiconductor bodies.

    Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component

    公开(公告)号:US10008639B2

    公开(公告)日:2018-06-26

    申请号:US15120457

    申请日:2015-02-20

    Abstract: A method for producing optoelectronic semiconductor components (100) is specified, wherein a carrier (1) having a carrier main side (11) is provided. Furthermore, a plurality of singulated optoelectronic semiconductor chips (2) are provided, wherein the semiconductor chips (2) each have a main emission side (21) and a contact side (22) opposite the main emission side (21). The singulated semiconductor chips (2) are then applied to the carrier main side (11), such that the contact side (22) in each case faces the carrier main side (11). In regions between the semiconductor chips, a mask frame (3) is applied, wherein the mask frame (3) is a grid of partitions (31). In a plan view of the carrier main side (11), each semiconductor chip (2) is surrounded all around by the partitions (31). The semiconductor chips (2) are potted with a conversion material (4) such that a conversion element (41) is respectively formed on the semiconductor chips (2). In this case, the conversion element (41) at least partly covers the main emission side (21) of the respective semiconductor chip (2). The carrier (1) is then removed. In a further step, the optoelectronic semiconductor components (100) are detached from the mask frame (3), the mask frame (3) being destroyed.

    Method of separating a component using predetermined breaking position and a component obatined by such method

    公开(公告)号:US11088297B2

    公开(公告)日:2021-08-10

    申请号:US16485414

    申请日:2018-03-20

    Inventor: Lutz Höppel

    Abstract: A method for producing a component and a component are disclosed. In an embodiment a method includes providing a substrate, applying a composite of components to the substrate, forming an anchoring layer on the composite of components, attaching a carrier to the anchoring layer, wherein the anchoring layer is disposed between the substrate and the carrier and removing the substrate, wherein the composite of components is divided into a plurality of components by forming a plurality of separating trenches, wherein, after removing the substrate, the components continue to be held on the carrier by the anchoring layer, and wherein the anchoring layer comprises at least one predetermined breaking layer having at least one predetermined breaking position, the predetermined breaking position being laterally surrounded by the separating trenches and—in a plan view of the carrier—being covered by one of the components.

    Method of producing a plurality of optoelectronic semiconductor components and optoelectronic semiconductor component

    公开(公告)号:US10361345B2

    公开(公告)日:2019-07-23

    申请号:US15542150

    申请日:2016-01-13

    Inventor: Lutz Höppel

    Abstract: A method of producing a plurality of optoelectronic semiconductor components includes a) preparing a composite with a semiconductor layer sequence, wherein the composite includes a plurality of component areas mechanically connected to one another; b) forming a plurality of connecting surfaces on the semiconductor layer sequence, wherein at least one connecting surface is formed on each component area; c) forming a molding compound on the semiconductor layer sequence, wherein the molding compound fills interstices between the connecting surfaces; and d) singulating the composite with the molding compound, wherein during singulation a plurality of molded bodies is formed from the molding compound, each of which is associated with a semiconductor body obtained from a component area of the composite.

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING SAME

    公开(公告)号:US20180254386A1

    公开(公告)日:2018-09-06

    申请号:US15756676

    申请日:2016-08-22

    CPC classification number: H01L33/486 H01L33/58 H01L33/60 H01L33/62 H01L33/642

    Abstract: An optoelectronic semiconductor component includes an active layer arranged between a p-type semiconductor region and an n-type semiconductor region, a carrier including a plastic and a first via and a second via, a p-contact layer and an n-contact layer arranged between the carrier and a semiconductor body at least in some regions, wherein the p-contact layer electrically joins the first via and the p-type semiconductor region, and the n-contact layer electrically joins the second via and the n-type semiconductor region, a metallic reinforcing layer arranged at least in some regions between the n-contact layer and the carrier, wherein the metallic reinforcing layer is at least 5 μm thick, and at least one p-contact feed-through arranged between the first via and the p-contact layer, wherein the p-contact feed-through is at least 5 μm thick and surrounded in a lateral direction by the reinforcing layer at least in some regions.

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