公开(公告)号：US09947549B1

公开(公告)日：2018-04-17

申请号：US15332849

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Zhenjiang Cui ,  Soonam Park ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/3213 ,  H01L21/311 ,  C23F1/12 ,  H01J37/32 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  C23F1/12 ,  H01J37/32091 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32138 ,  H01L21/7684

Abstract: Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time an amorphized cobalt layer is formed near the surface. A carbon-and-nitrogen-containing precursor is later delivered to the substrate processing region to form volatile cobalt complexes which desorb from the surface of the cobalt film. Cobalt may be selectively removed. The concurrent production of cobalt halide and amorphized regions was found to markedly increase the overall etch rate and markedly improve surface smoothness upon exposure to the carbon-and-nitrogen-containing precursor. All the recited steps may now be performed in the same substrate processing chamber.

公开(公告)号：US20180102259A1

公开(公告)日：2018-04-12

申请号：US15332849

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Zhenjiang Cui ,  Soonam Park ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/311 ,  C23F1/12 ,  H01J37/32

CPC classification number: H01L21/32136 ,  C23F1/12 ,  H01J37/32091 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32138 ,  H01L21/7684

Abstract: Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time an amorphized cobalt layer is formed near the surface. A carbon-and-nitrogen-containing precursor is later delivered to the substrate processing region to form volatile cobalt complexes which desorb from the surface of the cobalt film. Cobalt may be selectively removed. The concurrent production of cobalt halide and amorphized regions was found to markedly increase the overall etch rate and markedly improve surface smoothness upon exposure to the carbon-and-nitrogen-containing precursor. All the recited steps may now be performed in the same substrate processing chamber.

公开(公告)号：US09874524B2

公开(公告)日：2018-01-23

申请号：US15061769

申请日：2016-03-04

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Junghoon Kim ,  Soonwook Jung ,  Soonam Park ,  Dmitry Lubomirsky

IPC: G01J3/44 ,  G01N21/68 ,  H01J37/10 ,  H01J37/32

CPC classification number: G01N21/68 ,  G01J3/0208 ,  G01J3/0229 ,  G01J3/0237 ,  G01J3/0289 ,  G01J3/06 ,  G01J3/443 ,  G01N21/73 ,  G01N2201/0638 ,  G01N2201/068 ,  H01J37/10 ,  H01J37/32458 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J2237/103 ,  H01J2237/3341

Abstract: Implementations of the present disclosure relate to a plasma chamber having an optical device for measuring emission intensity of plasma species. In one implementation, the plasma chamber includes a chamber body defining a substrate processing region therein, the chamber body having a sidewall, a viewing window disposed in the sidewall, and a plasma monitoring device coupled to the viewing window. The plasma monitoring device includes an objective lens and an aperture member having a pinhole, wherein the aperture member is movable relative to the objective lens by an actuator to adjust the focal point in the plasma using principles of optics, allowing only the light rays from the focal point in the plasma to reach the pinhole. The plasma monitoring device therefore enables an existing OES (coupled to the plasma monitoring device through an optical fiber) to monitor emission intensity of the species at any specific locations of the plasma.

公开(公告)号：US09773648B2

公开(公告)日：2017-09-26

申请号：US14468066

申请日：2014-08-25

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: C23C14/32 ,  H01J37/32

CPC classification number: H01J37/32596 ,  H01J37/32018 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568

Abstract: Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

公开(公告)号：US20170236691A1

公开(公告)日：2017-08-17

申请号：US15581357

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  B05B1/18 ,  H01L21/67 ,  B05B1/00 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US09659753B2

公开(公告)日：2017-05-23

申请号：US14454493

申请日：2014-08-07

Applicant: Applied Materials, Inc.

Inventor： Tae Cho ,  Sang Won Kang ,  Dongqing Yang ,  Raymond W. Lu ,  Peter Hillman ,  Nicholas Celeste ,  Tien Fak Tan ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/32082

Abstract: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

公开(公告)号：US20170062184A1

公开(公告)日：2017-03-02

申请号：US14838086

申请日：2015-08-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Toan Q. Tran ,  Soonam Park ,  Zilu Weng ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32532 ,  H01J37/32715

Abstract: An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

Abstract translation: 一种等离子体处理装置，包括第一等离子体源，第一平面电极，气体分配装置，等离子体阻挡屏和工件卡盘。 第一等离子体源产生通过第一等离子体源穿过第一平面电极中的第一孔的第一等离子体产物。 第一等离子体产物继续通过气体分配装置中的第二孔。 等离子体阻挡屏幕包括具有第四孔的第三板，面向气体分配装置，使得第一等离子体产物通过多个第四孔。 工件卡盘面对等离子体阻挡屏幕的第二侧，在等离子体阻挡屏幕和工件卡盘之间限定一个处理室。 第四孔具有足够小的尺寸以阻挡在处理室中产生的等离子体到达气体分配装置。

公开(公告)号：US20160240402A1

公开(公告)日：2016-08-18

申请号：US15139243

申请日：2016-04-26

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32972 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45559 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US20160118268A1

公开(公告)日：2016-04-28

申请号：US14989077

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/3213

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

公开(公告)号：US09299582B2

公开(公告)日：2016-03-29

申请号：US14512973

申请日：2014-10-13

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，硅锗和/或氮化硅，蚀刻选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 使用远程等离子体来激发含卤素的前体，并且在实施方案中可以使用局部等离子体。 在实施方案中，在将所得表面暴露于远离等离子体激发的卤素流出物之前，可以使用水分或其它含OH前体对基材上的含金属材料进行预处理。