公开(公告)号：US08482104B2

公开(公告)日：2013-07-09

申请号：US13346507

申请日：2012-01-09

申请人： Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

发明人： Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

IPC分类号： H01L29/20

CPC分类号： H01L21/02433 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02499 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003

摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.

摘要翻译： 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。

公开(公告)号：US20120241798A1

公开(公告)日：2012-09-27

申请号：US13459279

申请日：2012-04-30

申请人： Aurelien J.F. David ,  Michael R. Krames ,  Melvin B. McLaurin

发明人： Aurelien J.F. David ,  Michael R. Krames ,  Melvin B. McLaurin

IPC分类号： H01L33/58 ,  H01L33/48

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

摘要： Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.

摘要翻译： 本发明的实施方案包括包含与主体结合的主体和种子层的基板，以及包括设置在种子层上生长的n型区域和p型区域之间的发光层的半导体结构。 在垂直于半导体结构的生长方向的方向上的折射率的变化设置在主体和发光层之间。

公开(公告)号：US20120187372A1

公开(公告)日：2012-07-26

申请号：US13423625

申请日：2012-03-19

申请人： Rafael I. Aldaz ,  John E. Epler ,  Patrick N. Grillot ,  Michael R. Krames

发明人： Rafael I. Aldaz ,  John E. Epler ,  Patrick N. Grillot ,  Michael R. Krames

IPC分类号： H01L33/06 ,  H01L33/30

CPC分类号： H01L33/0079 ,  H01L33/405 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm in some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.

摘要翻译： AlGaInP发光器件形成为薄的倒装芯片器件。 该器件包括包括设置在n型区域和p型区域之间的AlGaInP发光层的半导体结构。 电连接到n型和p型区的N-和p-触点都形成在半导体结构的同一侧上。 半导体结构通过触点连接到安装座。 从半导体结构去除生长衬底，并且省略厚的透明衬底，使得在一些实施例中，器件中的半导体层的总厚度小于15μm，在一些实施例中小于10μm。 半导体结构的顶侧可以是纹理的。

公开(公告)号：US08114692B2

公开(公告)日：2012-02-14

申请号：US12985394

申请日：2011-01-06

申请人： Michael R. Krames

发明人： Michael R. Krames

IPC分类号： H01L21/00

CPC分类号： H01L33/504 ,  G02F1/133603 ,  H01L33/46

摘要： A semiconductor light emitting device comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material is adapted to absorb the first light and emit second light having a second peak wavelength. A second wavelength converting material is adapted to absorb either the first light or the second light and emit third light having a third peak wavelength. A filter is adapted to reflect fourth light having a fourth peak wavelength. The fourth light is either a portion of the second light or a portion of the third light. The filter is configured to transmit light having a peak wavelength longer or shorter than the fourth peak wavelength. The filter is disposed over the light emitting device in the path of at least a portion of the first, second, and third light.

摘要翻译： 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层适于发射具有第一峰值波长的第一光。 第一波长转换材料适于吸收第一光并发射具有第二峰值波长的第二光。 第二波长转换材料适于吸收第一光或第二光并发射具有第三峰值波长的第三光。 滤光器适于反射具有第四峰值波长的第四光。 第四个光是第二个光的一部分或第三个光的一部分。 滤光器被配置为透射具有比第四峰值波长更长或更短的峰值波长的光。 滤光器在第一，第二和第三光的至少一部分的路径中设置在发光器件上方。

公开(公告)号：US08062916B2

公开(公告)日：2011-11-22

申请号：US12266162

申请日：2008-11-06

申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。

公开(公告)号：US20110114987A1

公开(公告)日：2011-05-19

申请号：US12897866

申请日：2010-10-05

申请人： John E. Epler ,  Michael R. Krames ,  James G. Neff ,  Stefano Schiaffino

发明人： John E. Epler ,  Michael R. Krames ,  James G. Neff ,  Stefano Schiaffino

IPC分类号： H01L33/62 ,  H01L21/60

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1403

摘要： A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.

摘要翻译： 发光器件包括：半导体结构，包括设置在n型区域和p型区域之间的发光层，设置在p型区域上的金属p型触点和设置在n型区域上的金属n型触点 型区域。 金属p型接触和金属n型接触都形成在半导体结构的同一侧。 发光器件通过接合结构连接到安装件。 接合结构包括由间隙隔开的多个金属区域和设置在发光器件和靠近发光器件的边缘的安装件之间的金属结构。 金属结构构造成使得在接合期间，金属结构在发光器件和安装座之间形成连续的密封。

公开(公告)号：US20110097833A1

公开(公告)日：2011-04-28

申请号：US12985394

申请日：2011-01-06

申请人： Michael R. Krames

发明人： Michael R. Krames

IPC分类号： H01L33/44

CPC分类号： H01L33/504 ,  G02F1/133603 ,  H01L33/46

摘要： A semiconductor light emitting device comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material is adapted to absorb the first light and emit second light having a second peak wavelength. A second wavelength converting material is adapted to absorb either the first light or the second light and emit third light having a third peak wavelength. A filter is adapted to reflect fourth light having a fourth peak wavelength. The fourth light is either a portion of the second light or a portion of the third light. The filter is configured to transmit light having a peak wavelength longer or shorter than the fourth peak wavelength. The filter is disposed over the light emitting device in the path of at least a portion of the first, second, and third light.

摘要翻译： 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层适于发射具有第一峰值波长的第一光。 第一波长转换材料适于吸收第一光并发射具有第二峰值波长的第二光。 第二波长转换材料适于吸收第一光或第二光并发射具有第三峰值波长的第三光。 滤光器适于反射具有第四峰值波长的第四光。 第四个光是第二个光的一部分或第三个光的一部分。 滤光器被配置为透射具有比第四峰值波长更长或更短的峰值波长的光。 滤光器在第一，第二和第三光的至少一部分的路径中设置在发光器件上方。

公开(公告)号：US06903376B2

公开(公告)日：2005-06-07

申请号：US10158360

申请日：2002-05-29

申请人： Yu-Chen Shen ,  Michael R. Krames ,  Michael J. Ludowise

发明人： Yu-Chen Shen ,  Michael R. Krames ,  Michael J. Ludowise

IPC分类号： H01L27/15 ,  H01L33/02 ,  H01L33/08 ,  H01L33/38 ,  H01L33/40 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L33/64 ,  H01L29/267

CPC分类号： H01L33/405 ,  G09G2360/148 ,  H01L27/156 ,  H01L33/025 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00014

摘要： In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In a first embodiment, the separation between the light emitting region and the reflective contact is between about 0.5λn and about 0.9λn, where λn is the wavelength of radiation emitted from the light emitting region in an area of the device separating the light emitting region and the reflective contact. In a second embodiment, the separation between the light emitting region and the reflective contact is between about λn and about 1.4λn. The light emitting region may be, for example, III-nitride, III-phosphide, or any other suitable material.

摘要翻译： 根据本发明的实施例，发光器件包括发光区域和从发光区域分离一层或多层的反射接触。 在第一实施例中，发光区域和反射接触件之间的间隔在约0.5λ至约0.9λ之间，其中λ< SUB>是在分离发光区域和反射接触的器件的区域中从发光区域发射的辐射的波长。 在第二实施例中，发光区域和反射接触件之间的间隔在约λλ至约1.4λ之间。 发光区域可以是例如III族氮化物，III-磷化物或任何其它合适的材料。

公开(公告)号：US06849472B2

公开(公告)日：2005-02-01

申请号：US09992192

申请日：2001-11-13

申请人： Michael R. Krames ,  Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Michael R. Krames ,  Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01S5/02 ,  H01S5/32 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/1844 ,  H01L31/1852 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333 ,  Y02E10/544

摘要： A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.

摘要翻译： 一种制造包括III-氮化物量子阱层的发光半导体器件的方法包括选择量子阱层的面取向以控制压电场的场强和/或自发电场的场强 量子阱层，并用选定的面取向生长量子阱层。 例如，可以选择小面取向以减小压电场的大小和/或自发电场的大小。 也可以选择面取向以控制或减小组合的压电和自发电场强度的大小。

公开(公告)号：US06784463B2

公开(公告)日：2004-08-31

申请号：US10095552

申请日：2002-03-11

申请人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

发明人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684

摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

摘要翻译： 发光半导体器件包括包括有源区的层叠层。 有源区包括选自III-磷化物，III-砷化物及其合金的半导体。 对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。 电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。 在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。 因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。