Microelectronic assembly incorporating lead regions defined by gaps in a polymeric sheet
    102.
    发明授权
    Microelectronic assembly incorporating lead regions defined by gaps in a polymeric sheet 失效
    包含由聚合物片材中的间隙限定的引线区域的微电子组件

    公开(公告)号:US06486547B2

    公开(公告)日:2002-11-26

    申请号:US09798809

    申请日:2001-03-02

    Abstract: A sheet such as a polymeric dielectric has elongated lead regions partially separated from the main region of the sheet by gaps in the sheet, and has conductors extending along the lead regions. The lead regions are connected to contacts on a microelectronic element, and the microelectronic element is moved away from the main region of the sheet, thereby bending the lead regions downwardly to form leads projecting from the main region of the sheet.

    Abstract translation: 诸如聚合物电介质的片材具有通过片材中的间隙与片材的主要区域部分地分离的细长引线区域,并且具有沿引线区域延伸的导体。 引线区域连接到微电子元件上的触点,并且微电子元件移动离开片材的主要区域,从而将引线区域向下弯曲以形成从片材的主要区域突出的引线。

    Microelectronic unit forming methods and materials
    107.
    发明授权
    Microelectronic unit forming methods and materials 有权
    微电子单元成型方法和材料

    公开(公告)号:US06361959B1

    公开(公告)日:2002-03-26

    申请号:US09317675

    申请日:1999-05-24

    Abstract: Electrically conductive elements such as terminals and leads are held on a support structure by a degradable connecting layer such as a adhesive degradable by heat or radiant energy. After connecting these elements to a microelectronic element such as a chip or wafer, the conductive elements are released from the support structure by degrading the connecting layer. The support structure desirably has a predictable, isotropic coefficient of thermal expansion and such coefficient of thermal expansion may be close to that of silicon to minimize the effect of the temperature changes. The conductive elements may be mounted on a plurality of individual tiles rather than on an unitary sheet covering an entire wafer to minimize dimensional changes when the dielectric is released from the support structure.

    Abstract translation: 诸如端子和引线的导电元件通过可降解的连接层(例如通过热或辐射能降解的粘合剂)保持在支撑结构上。 在将这些元件连接到诸如芯片或晶片的微电子元件之后,通过降低连接层而将导电元件从支撑结构释放。 支撑结构理想地具有可预测的各向同性热膨胀系数,并且这种热膨胀系数可能接近于硅的热膨胀系数以最小化温度变化的影响。 导电元件可以安装在多个单独的瓦片上,而不是在覆盖整个晶片的整体片材上安装,以便当电介质从支撑结构释放时最小化尺寸变化。

Patent Agency Ranking