公开(公告)号：US6031858A

公开(公告)日：2000-02-29

申请号：US925764

申请日：1997-09-09

Applicant: Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

Inventor： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01S5/32

CPC classification number: H01S5/32341 ,  H01S2301/166 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087

Abstract: A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

公开(公告)号：US5905275A

公开(公告)日：1999-05-18

申请号：US876739

申请日：1997-06-16

Applicant: Shinya Nunoue ,  Masahiro Yamamoto

Inventor： Shinya Nunoue ,  Masahiro Yamamoto

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L23/13

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/24

Abstract: A gallium nitride compound semiconductor light-emitting device uses a sapphire substrate as a support and has n- and p-type electrodes on the top and bottom surfaces. A trench is formed in the sapphire substrate. This trench has two side wall surfaces which extend from the top surface to the bottom surface and so incline as to converge downward. A buffer layer is formed on the sapphire substrate. A gallium nitride compound semiconductor multiple layer having an n-type layer and a p-type layer are formed on the buffer layer. This semiconductor multiple layer has two side portions arranged along the two side wall surfaces of the trench and a central portion positioned between these two side portions and formed integrally with the two side portions. N- and p-type electrodes are so formed as to oppose each other on the two sides of the central portion of the semiconductor multiple layer.

Abstract translation: 氮化镓系化合物半导体发光元件使用蓝宝石基板作为支撑体，在上下表面具有n型和p型电极。 在蓝宝石衬底中形成沟槽。 该沟槽具有从顶表面延伸到底表面的两个侧壁表面，因此倾斜以向下会聚。 在蓝宝石衬底上形成缓冲层。 在缓冲层上形成具有n型层和p型层的氮化镓化合物半导体多层。 该半导体多层具有沿着沟槽的两个侧壁表面布置的两个侧面部分和位于这两个侧部之间的中心部分并且与两个侧部分一体地形成。 N型和p型电极在半导体多层的中心部分的两侧形成为彼此相对。

公开(公告)号：US09040322B2

公开(公告)日：2015-05-26

申请号：US13601231

申请日：2012-08-31

Applicant: Taisuke Sato ,  Kotaro Zaima ,  Jumpei Tajima ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Taisuke Sato ,  Kotaro Zaima ,  Jumpei Tajima ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L21/00 ,  H01L33/12 ,  H01L33/24 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/24

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.

Abstract translation: 根据一个实施例，公开了一种用于制造半导体发光元件的方法。 该方法可以包括将结构体的层叠主体接合到基板主体。 结构体包括生长衬底和设置在生长衬底上的层叠主体。 堆叠主体包括第一氮化物半导体膜，设置在第一氮化物半导体膜上的发光膜和设置在发光膜上的第二氮化物半导体膜。 该方法可以包括去除生长底物。 该方法可以包括形成多个堆叠体。 该方法可以包括在第一氮化物半导体层的表面中形成不均匀部分。 该方法可以包括形成多个半导体发光元件。

公开(公告)号：US08994054B2

公开(公告)日：2015-03-31

申请号：US13195926

申请日：2011-08-02

Applicant: Eiji Muramoto ,  Shinya Nunoue ,  Toshiyuki Oka

Inventor： Eiji Muramoto ,  Shinya Nunoue ,  Toshiyuki Oka

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/38 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.

Abstract translation: 根据一个实施例，半导体发光器件包括层叠结构体，第一电极，第二电极，第三电极和第四电极。 层叠结构体包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极电连接到第一半导体层。 第二电极与第二半导体层形成欧姆接触。 第二电极对于从发光层发射的光是半透明的。 第三电极穿过第二电极并与第二电极电连接以与第二半导体层形成肖特基接触。 第三电极设置在第四电极和第二半导体层之间。 沿第一半导体层，发光层和第二半导体层的堆叠方向观察的第四电极的形状与沿着层叠方向观察的第三电极的形状相同。

公开(公告)号：US08921870B2

公开(公告)日：2014-12-30

申请号：US13037740

申请日：2011-03-01

Applicant: Takahiro Sato ,  Shinya Nunoue

Inventor： Takahiro Sato ,  Shinya Nunoue

IPC: H01L29/18 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L25/0753 ,  H01L33/60 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265

Abstract: According to one embodiment, a light emitting device includes a base substrate, first and second substrates, first and second semiconductor light emitting elements. The first and second substrates are provided on a major surface of the base substrate and include first and second reflection regions, respectively. The first and second semiconductor light emitting elements include first and second structural bodies including first and second light emitting layers, respectively. Each of the first and second semiconductor light emitting elements is inputted with a power not less than 1 Watt. An area of a face of the first semiconductor light emitting element is S1, and a gap between the first light emitting layer and the first substrate is t1. An area R1 of the first reflection region satisfies a relationship (S1+100t12)≦R1≦(S1+10000t12). A gap L between the first and the second semiconductor light emitting elements satisfies the relationships 100t1≦L≦10000t1.

Abstract translation: 根据一个实施例，发光器件包括基底衬底，第一和第二衬底，第一和第二半导体发光元件。 第一和第二基板设置在基底基板的主表面上，分别包括第一和第二反射区域。 第一和第二半导体发光元件分别包括包括第一和第二发光层的第一和第二结构体。 第一和第二半导体发光元件中的每一个都输入不小于1瓦特的功率。 第一半导体发光元件的面的面积为S1，第一发光层与第一基板的间隔为t1。 第一反射区域的区域R1满足关系（S1 + 100t12）＆nlE; R1＆nlE;（S1 + 10000t12）。 第一和第二半导体发光元件之间的间隙L满足关系式100t1＆nlE; L＆nlE; 10000t1。

公开(公告)号：US08878213B2

公开(公告)日：2014-11-04

申请号：US13220072

申请日：2011-08-29

Applicant: Naoharu Sugiyama ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Naoharu Sugiyama ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/22 ,  H01L33/08

CPC classification number: H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

Abstract translation: 根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。 发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。 透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

公开(公告)号：US08859307B2

公开(公告)日：2014-10-14

申请号：US13601120

申请日：2012-08-31

Applicant: Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue ,  Hiroshi Katsuno

Inventor： Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue ,  Hiroshi Katsuno

IPC: H01L21/00 ,  B23K26/00 ,  B23K26/20 ,  B23K26/18 ,  H01L23/34 ,  H01L23/00

CPC classification number: H01L23/34 ,  B23K26/0006 ,  B23K26/009 ,  B23K26/18 ,  B23K26/20 ,  B23K2103/56 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29099 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/29184 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/75262 ,  H01L2224/75985 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83399 ,  H01L2224/834 ,  H01L2224/83449 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/8346 ,  H01L2224/83466 ,  H01L2224/83471 ,  H01L2224/83472 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00

Abstract: According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.

Abstract translation: 根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。 放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。 接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。 接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

公开(公告)号：US08858835B2

公开(公告)日：2014-10-14

申请号：US13221042

申请日：2011-08-30

Applicant: Aoi Okada ,  Yumi Fukuda ,  Naotoshi Matsuda ,  Iwao Mitsuishi ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

Inventor： Aoi Okada ,  Yumi Fukuda ,  Naotoshi Matsuda ,  Iwao Mitsuishi ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

IPC: C09K11/64 ,  C09K11/77 ,  C09K11/08 ,  H01L33/50

CPC classification number: C09K11/7734 ,  C09K11/0883 ,  C09K11/7728 ,  F21K9/64 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  Y02B20/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd  (1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0

Abstract translation: 本实施方案提供由下式（1）表示的红色发光荧光物质：（M1-xECx）aM1bAlOcNd（1）。 在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，IIIB族元素，稀土元素和IVA族元素的元素; EC是选自Eu，Ce，Mn，Tb，Yb，Dy，Sm，Tm，Pr，Nd，Pm，Ho，Er，Cr，Sn，Cu，Zn，As，Ag，Cd， Sb，Au，Hg，Tl，Pb，Bi和Fe; M1与M不同，选自四价元素; 并且x，a，b，c和d分别是满足0

公开(公告)号：US08847271B2

公开(公告)日：2014-09-30

申请号：US13729563

申请日：2012-12-28

Applicant: Hiroshi Katsuno ,  Satoshi Mitsugi ,  Toshihide Ito ,  Shinya Nunoue

Inventor： Hiroshi Katsuno ,  Satoshi Mitsugi ,  Toshihide Ito ,  Shinya Nunoue

IPC: H01L33/38 ,  H01L29/20 ,  H01L33/62 ,  H01L33/22 ,  H01L33/44 ,  H01L33/20

CPC classification number: H01L33/42 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。 第一层具有第一和第二表面。 第二层设置在第一层的第二表面的一侧。 发光层设置在第一和第二层之间。 电介质层接触第二表面，折射率低于第一层的折射率。 第一电极包括第一和第二部分。 第一部分接触第二表面并邻近介电层设置。 第二部分与第一半导体层与电介质层的相对侧接触。 第二电极与第二层与发光层的相对侧接触。

公开(公告)号：US08835950B2

公开(公告)日：2014-09-16

申请号：US13398170

申请日：2012-02-16

Applicant: Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L29/22 ,  H01L33/02 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/32 ,  H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

Abstract translation: 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。