Solder in cavity interconnection structures

    公开(公告)号:US10468367B2

    公开(公告)日:2019-11-05

    申请号:US15884167

    申请日:2018-01-30

    申请人: INTEL CORPORATION

    摘要: The present disclosure relates to the field of fabricating microelectronic packages, wherein cavities are formed in a dielectric layer deposited on a first substrate to maintain separation between soldered interconnections. In one embodiment, the cavities may have sloped sidewalls. In another embodiment, a solder paste may be deposited in the cavities and upon heating solder structures may be formed. In other embodiments, the solder structures may be placed in the cavities or may be formed on a second substrate to which the first substrate may be connected. In still other embodiments, solder structures may be formed on both the first substrate and a second substrate. The solder structures may be used to form solder interconnects by contact and reflow with either contact lands or solder structures on a second substrate.

    Multi-layer package
    19.
    发明授权

    公开(公告)号:US10535634B2

    公开(公告)日:2020-01-14

    申请号:US15106761

    申请日:2015-07-22

    申请人: INTEL CORPORATION

    摘要: Embodiments herein relate to a system in package (SiP). The SiP may have a first layer of one or more first functional components with respective first active sides and first inactive sides opposite the first active sides. The SiP may further include a second layer of one or more second functional components with respective second active sides and second inactive sides opposite the second active sides. In embodiments, one or more of the first active sides are facing and electrically coupled with one or more of the second active sides through a through-mold via or a through-silicon via.