公开(公告)号：US20070040249A1

公开(公告)日：2007-02-22

申请号：US11589849

申请日：2006-10-31

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US06774466B1

公开(公告)日：2004-08-10

申请号：US09493080

申请日：2000-01-28

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H10L23495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US20120217556A1

公开(公告)日：2012-08-30

申请号：US13459839

申请日：2012-04-30

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/78

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.

摘要翻译： 一种具有半导体芯片的半导体器件，具有第一主表面和第二相对的主表面，并且包括形成在第一主表面上的源极和栅电极的MOSFET，以及形成在第二主表面上的漏电极，第一和第二导电 作为源电极和栅电极的引线端子的部件分别设置在第一主表面上，第一和第二导电部件中的每一个在平面图中与芯片重叠，密封体密封芯片和部件 的第一和第二导电构件，使得第一导电构件的一部分从密封体的第一侧表面向外突出，并且第一和第二导电构件的部分从密封体的相对的第二侧表面向外突出 在平面图中。

公开(公告)号：US20080169537A1

公开(公告)日：2008-07-17

申请号：US12046741

申请日：2008-03-12

申请人： Ryoichi KAJIWARA ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi KAJIWARA ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。

公开(公告)号：US07342267B2

公开(公告)日：2008-03-11

申请号：US11415290

申请日：2006-05-02

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。

公开(公告)号：US20070029540A1

公开(公告)日：2007-02-08

申请号：US11543030

申请日：2006-10-05

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/06 ,  H01L23/48 ,  H01L31/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。

公开(公告)号：US20060197200A1

公开(公告)日：2006-09-07

申请号：US11415291

申请日：2006-05-02

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。

公开(公告)号：US06798072B2

公开(公告)日：2004-09-28

申请号：US09793439

申请日：2001-02-27

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Asao Nishimura ,  Masayoshi Shinoda

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Asao Nishimura ,  Masayoshi Shinoda

IPC分类号： H01L2348

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L23/295 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/31 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/325 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48644 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75314 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81409 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83851 ,  H01L2224/85051 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/05624 ,  H01L2224/4554

摘要： A semiconductor device includes a semiconductor chip and a printed circuit board. Metal electrodes of the semiconductor chip and the internal connection terminals of the printed circuit board are electrically connected through the metallic joining via precious metal bumps. A melting point of a metal material constituting each of the metallic joining parts is equal to or higher than 275 degrees, and a space defined between the chip and the board is filled with resin (under fill) containing 50 vol % or more inorganic fillers.

摘要翻译： 半导体器件包括半导体芯片和印刷电路板。 半导体芯片的金属电极和印刷电路板的内部连接端子通过金属接合通过贵金属凸块电连接。 构成每个金属接合部件的金属材料的熔点等于或高于275度，并且在芯片和板之间限定的空间填充含有50体积％以上无机填料的树脂（填充物）。

公开(公告)号：US06784554B2

公开(公告)日：2004-08-31

申请号：US10321567

申请日：2002-12-18

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Masayoshi Shinoda ,  Akihiko Narisawa ,  Asao Nishimura ,  Toshiaki Morita ,  Kazuya Takahashi ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Masayoshi Shinoda ,  Akihiko Narisawa ,  Asao Nishimura ,  Toshiaki Morita ,  Kazuya Takahashi ,  Kazutoshi Itou

IPC分类号： H01L2348

CPC分类号： H01L24/16 ,  H01L24/02 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K3/244 ,  H05K3/4602 ,  H01L2924/00

摘要： In a semiconductor device in which an LSI chip comprising electrodes with a 100 &mgr;m pitch or less and 50 or more pins is mounted directly on an organic substrate, a mounting structure and a manufacturing method thereof are provided excellent in the solder resistant reflow property, temperature cycle reliability and high temperature/high humidity reliability of the semiconductor device. Electrode Au bumps of the chip and an Au film at the uppermost surface of connection terminals of the substrate are directly flip-chip bonded by Au/Au metal bonding and the elongation of the bonded portion of the Au bump is 2 &mgr;m or more. The method of obtaining the bonded structure involves a process of supersonically bonding both of the bonding surfaces within 10 min after sputter cleaning, under the bonding conditions selected from room temperature on the side of the substrate, room temperature to 150° C. on the side of the chip, a bonding load of ½S×100 MPa to S×180 MPa (S: contact area between bump and chip), a loading mode increasing during bonding, and supersonic application time of 50 to 500 ms.

摘要翻译： 在其中包括具有100mum间距的电极和50个或更多个引脚的电极的LSI芯片直接安装在有机基板上的半导体器件中，提供了优良的耐焊接回流性能，温度 半导体器件的循环可靠性和高温/高湿度可靠性。 电极在基板的连接端子的最上表面处的芯片的Au凸块和Au膜通过Au / Au金属接合直接倒装芯片接合，并且Au凸块的接合部分的伸长率为2μm以上。 获得接合结构的方法包括在溅射清洗后10分钟内在选自室温一侧的接合条件下在室温至室温至150℃之间的接合条件下将两个接合表面进行超声波接合的方法 芯片的接合负载为1/2S×100MPa至Sx180MPa（S：凸点与芯片之间的接触面积），接合期间的负载模式增加，超音速施加时间为50〜500ms。

公开(公告)号：US5884835A

公开(公告)日：1999-03-23

申请号：US686538

申请日：1996-07-26

申请人： Ryoichi Kajiwara ,  Toshiyuki Takahashi ,  Kazuya Takahashi ,  Masahiro Koizumi ,  Hiroshi Watanabe ,  Yukiharu Akiyama

发明人： Ryoichi Kajiwara ,  Toshiyuki Takahashi ,  Kazuya Takahashi ,  Masahiro Koizumi ,  Hiroshi Watanabe ,  Yukiharu Akiyama

IPC分类号： H01L21/607 ,  B23K20/00 ,  H01L21/60

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/78301 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/78 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20753

摘要： In a case of ultrasonic bonding of a bonding wire to a metal pad provided on a semiconductor substrate, the vibration amplitude of a tip end of the bonding tool is set to be smaller than the film thickness of the metal pad, and the vibration frequency of the bonding tool is set to be higher than 70 kHz. According physical damage, such as cracks produced in a portion beneath the metal pad, can be prevented.

摘要翻译： 在将接合线超声波接合到设置在半导体基板上的金属焊盘的情况下，将接合工具的前端的振动振幅设定为小于金属焊盘的膜厚，振动频率 接合工具设定为高于70kHz。 可以防止物理损坏，例如在金属垫下面的部分产生的裂纹。