公开(公告)号：US10566318B2

公开(公告)日：2020-02-18

申请号：US16008276

申请日：2018-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Hye Seok Noh ,  Han Kyu Seong ,  Sung Hyun Sim ,  Ha Nul Yoo

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62 ,  H01L27/12 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  H01L33/30 ,  H01L33/40

Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

公开(公告)号：US10103301B2

公开(公告)日：2018-10-16

申请号：US15617669

申请日：2017-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanul Yoo ,  Yong Il Kim ,  Sung Hyun Sim ,  Wan Tae Lim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/58 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12 ,  H01L33/50 ,  H01L33/40 ,  H01L33/00 ,  F21K9/235 ,  F21V29/76 ,  F21K9/238 ,  F21K9/232

Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.

公开(公告)号：US09997561B2

公开(公告)日：2018-06-12

申请号：US15413079

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park

IPC: H01L33/00 ,  H01L27/15 ,  H01L25/065 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L33/44 ,  H01L25/075

CPC classification number: H01L27/156 ,  H01L25/0655 ,  H01L25/0753 ,  H01L33/0012 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/50 ,  H01L33/507 ,  H01L33/52 ,  H01L33/62 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

公开(公告)号：US09954028B2

公开(公告)日：2018-04-24

申请号：US15449396

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Sung Hyun Sim ,  Wan Tae Lim ,  Yong Il Kim ,  Hanul Yoo

IPC: H01L27/15 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/50

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

公开(公告)号：US09406635B2

公开(公告)日：2016-08-02

申请号：US14693749

申请日：2015-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon Yoon ,  Yong Il Kim ,  Myong Soo Cho

IPC: H01L23/00 ,  H01L33/62

CPC classification number: H01L24/16 ,  H01L24/05 ,  H01L24/13 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13111 ,  H01L2224/1607 ,  H01L2224/16106 ,  H01L2224/16258 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014

Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.

Abstract translation: 半导体发光器件包括多区域焊盘。 半导体发光器件包括具有第一表面和第二表面的发光二极管（LED）芯片，第一表面设置有第一和第二电极以及与第一表面相对的第二表面。 钝化层设置在LED芯片的表面上，使得第一和第二电极的接合区域通过钝化层露出。 在每个相应的接合区域中设置有焊盘，并且具有多个分离的区域。 焊料凸块设置在每个相应的接合区域中并且覆盖相应焊垫的多个分离区域。 在半导体发光器件中，通过确保焊盘和焊料凸块之间的界面不被完全损坏，从而可以有效地防止焊盘和焊料凸点之间的分离。

公开(公告)号：US09099629B2

公开(公告)日：2015-08-04

申请号：US13929431

申请日：2013-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In Yang ,  Yong Il Kim ,  Kwang Min Song ,  Wan Tae Lim ,  Se Jun Han ,  Hyun Kwon Hong

IPC: H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Abstract translation: 半导体发光器件包括第一导电半导体层，有源层，第二导电半导体层，第一内部电极，第二内部电极，绝缘部分以及第一和第二焊盘电极。 有源层设置在第一导电半导体层的第一部分上，并且其上设置有第二导电层。 第一内部电极设置在与第一部分分离的第一导电半导体层的第二部分上。 第二内部电极设置在第二导电半导体层上。 绝缘部分设置在第一和第二内部电极之间，并且第一和第二焊盘电极设置在绝缘部分上以连接到第一和第二内部电极中的相应一个。

公开(公告)号：US11764336B2

公开(公告)日：2023-09-19

申请号：US17385193

申请日：2021-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Sim ,  Yong Il Kim ,  Ha Nul Yoo ,  Ji Hye Yeon ,  Jun Bu Youn ,  Ji Hoon Yun ,  Su Hyun Jo

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/504 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

公开(公告)号：US10707393B2

公开(公告)日：2020-07-07

申请号：US15995546

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Han Kyu Seong ,  Ji Hye Yeon ,  Jin Sub Lee ,  Young Jin Choi

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/44 ,  H01L33/60 ,  H01L25/075 ,  H01L33/50 ,  H01L27/15 ,  H01L33/46

Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

公开(公告)号：US10401557B2

公开(公告)日：2019-09-03

申请号：US15078488

申请日：2016-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In Kim ,  Ho Young Song ,  Yong Il Kim

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  F21V8/00 ,  F21Y101/00

Abstract: A semiconductor light emitting device includes a wiring board including a mounting surface on which a first wiring electrode and a second wiring electrode are disposed; a semiconductor light emitting diode (LED) chip including a first surface on which a first electrode and a second electrode are disposed, the first surface facing the mounting surface, the semiconductor LED chip further including a second surface positioned opposite to the first surface, and side surfaces positioned between the first and second surfaces, the first and second electrodes being connected to the first and second wiring electrodes, respectively; and a reflective layer disposed on at least one of the second surface and the side surfaces of the semiconductor LED chip.

公开(公告)号：US10170666B2

公开(公告)日：2019-01-01

申请号：US15389808

申请日：2016-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L33/08 ,  G09G3/20 ,  H01L33/38 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  G09G3/32 ,  H01L33/46 ,  H01L33/62

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.