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公开(公告)号：US09862617B2
公开(公告)日：2018-01-09
申请号：US14749212
申请日：2015-06-24
发明人： Matthew Law , Sean Seefeld , James Puthussery
IPC分类号： B05D5/12 , C01G49/12 , B82Y30/00 , B82Y40/00 , C23C16/30 , C23C16/44 , H01L31/032 , H01L31/072 , B05D1/00 , B05D1/02 , B05D1/18 , C23C16/22 , C23C16/56
CPC分类号： C01G49/12 , B05D1/005 , B05D1/02 , B05D1/18 , B82Y30/00 , B82Y40/00 , C01P2002/72 , C01P2004/03 , C01P2004/32 , C01P2004/64 , C01P2006/22 , C23C16/22 , C23C16/305 , C23C16/4417 , C23C16/56 , H01L31/032 , H01L31/072 , Y02E10/50
摘要： Systems and methods are provided for the fabrication and manufacture of efficient, low-cost p-n heterojunction pyrite solar cells. The p-n heterojunction pyrite solar cells can include a pyrite thin cell component, a window layer component, and a top surface contact component. The pyrite thin cell component can be fabricated from nanocrystal paint deposited onto metal foils or microcrystalline pyrite deposited onto foil by chemical vapor deposition. A method of synthesizing colloidal pyrite nanocrystals is provided. Methods of manufacturing the efficient, low-cost p-n heterojunction pyrite solar cells are also provided.
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12.发明申请公开(公告)号：US20170287914A1
公开(公告)日：2017-10-05
申请号：US15472486
申请日：2017-03-29
发明人： Mitsuhiro OKADA
IPC分类号： H01L27/108 , C23C16/22 , H01L21/265 , C23C16/458 , C23C16/455 , H01L21/02 , C23C16/02 , C23C16/52
CPC分类号： H01L27/1085 , C23C16/0272 , C23C16/22 , C23C16/45523 , C23C16/4582 , C23C16/52 , H01L21/02532 , H01L21/0262 , H01L21/02645 , H01L21/26506 , H01L28/00
摘要： A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.
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13.发明授权公开(公告)号：US09768016B2
公开(公告)日：2017-09-19
申请号：US14899552
申请日：2014-06-25
申请人： Ultratech, Inc.
IPC分类号： H01L21/20 , H01L21/36 , H01L21/04 , H01L21/02 , B23K26/03 , B23K26/073 , B23K26/122 , B23K26/12 , C23C16/22 , C23C16/56 , H01L21/268 , H01L21/324 , H01L29/20 , B23K103/00
CPC分类号： H01L21/0262 , B23K26/034 , B23K26/0738 , B23K26/122 , B23K26/1224 , B23K2103/56 , C23C16/22 , C23C16/56 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02598 , H01L21/02675 , H01L21/02694 , H01L21/268 , H01L21/3245 , H01L29/2003
摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.
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14.发明申请公开(公告)号：US20170243740A1
公开(公告)日：2017-08-24
申请号：US15511911
申请日：2015-09-25
发明人： Carsten VON HAENISCH , Kerstin VOLZ , Wolfgang STOLZ , Eduard STERZER , Andreas BEYER , Dominik KEIPER , Benjamin RINGLER
CPC分类号： H01L21/02538 , C07F9/46 , C07F9/504 , C07F9/72 , C07F9/90 , C23C16/22 , C23C16/301 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/0262
摘要： The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E′R3R4 (I) or R5E(E′R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.
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公开(公告)号：US09732422B2
公开(公告)日：2017-08-15
申请号：US14604470
申请日：2015-01-23
发明人： Ying She , James T. Beals
IPC分类号： C23C16/44 , B22F1/02 , C23C16/442 , C23C16/22 , C23C16/01 , B05D1/22 , B01J2/04 , B01J8/24 , B22F3/105 , C23C16/24 , B33Y70/00 , B33Y40/00 , C23C16/448 , C23C16/455
CPC分类号： C23C16/4417 , B01J2/04 , B01J8/24 , B05D1/22 , B22F1/02 , B22F3/1055 , B22F2201/00 , B22F2998/00 , B33Y40/00 , B33Y70/00 , C23C16/01 , C23C16/22 , C23C16/24 , C23C16/442 , C23C16/4481 , C23C16/45561 , Y02P10/295
摘要： A method and system for coating metallic powder particles is provided. The method includes: disposing an amount of metallic powder particulates within a fluidizing reactor; removing moisture adhered to the powder particles disposed within the reactor using a working gas; coating the powder particles disposed within the reactor using a precursor gas; and purging the precursor gas from the reactor using the working gas.
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公开(公告)号：US09714578B2
公开(公告)日：2017-07-25
申请号：US15103261
申请日：2014-11-07
发明人： Glen Harold Kirby
IPC分类号： C23C24/00 , F01D5/28 , C04B41/85 , C04B41/89 , C04B41/00 , C04B41/50 , C04B41/52 , F01D11/12 , C04B35/515 , C04B35/622 , C04B35/624 , C04B41/87 , C23C16/22 , C23C16/44 , C23C16/56 , F01D9/02 , F01D25/08
CPC分类号： F01D5/288 , C04B35/5156 , C04B35/62222 , C04B35/624 , C04B41/0009 , C04B41/009 , C04B41/5024 , C04B41/52 , C04B41/85 , C04B41/87 , C04B41/89 , C04B2235/3217 , C04B2235/3272 , C04B2235/3427 , C23C16/22 , C23C16/44 , C23C16/56 , F01D5/284 , F01D9/02 , F01D11/12 , F01D11/122 , F01D11/125 , F01D25/08 , F05D2220/32 , F05D2230/314 , F05D2240/35 , F05D2260/231 , F05D2300/516 , F05D2300/6033 , Y02T50/672 , C04B35/565 , C04B35/806 , C04B35/584 , C04B41/4539 , C04B41/4572 , C04B41/4582 , C04B41/5025 , C04B41/4531 , C04B41/5096 , C04B41/5071 , C04B41/522 , C04B41/5035
摘要： A method of depositing abradable coating on an engine component is provided wherein the engine component is formed of ceramic matrix composite (CMC) and one or more layers, including at least one environmental barrier coating, may be disposed on the outer layer of the CMC. An outermost layer of the structure may further comprise a porous abradable layer that is disposed on the environmental barrier coating and provides a breakable structure which inhibits blade damage. The abradable layer may be gel-cast on the component and sintered or may be direct written by extrusion process and subsequently sintered.
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17.发明授权公开(公告)号：US09666432B2
公开(公告)日：2017-05-30
申请号：US14909004
申请日：2014-09-17
申请人： Ultratech, Inc.
IPC分类号： H01L29/15 , H01L31/0256 , H01L21/02 , C23C16/22 , H01L29/20 , H01L21/268 , B23K26/03 , B23K26/073 , B23K26/122 , C23C16/56 , H01L21/324 , B23K103/00
CPC分类号： H01L21/0262 , B23K26/034 , B23K26/0738 , B23K26/122 , B23K26/1224 , B23K2103/56 , C23C16/22 , C23C16/56 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02598 , H01L21/02675 , H01L21/02694 , H01L21/268 , H01L21/3245 , H01L29/2003
摘要： Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.
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18.发明申请公开(公告)号：US20170122114A1
公开(公告)日：2017-05-04
申请号：US14926803
申请日：2015-10-29
CPC分类号： F01D5/282 , B32B18/00 , C04B35/80 , C04B35/803 , C04B2235/6028 , C04B2235/614 , C04B2235/616 , C04B2237/38 , C04B2237/62 , C04B2237/84 , C23C16/22 , F01D5/20 , F01D5/284 , F01D9/041 , F05D2220/32 , F05D2230/314 , F05D2300/6033
摘要： A process of producing a ceramic matrix composite component. The process includes positioning core plies on a mandrel. At least partially rigidizing the core plies to form a preform ceramic matrix composite arrangement defining a tip cavity and a hollow region. Ceramic matrix composite tip plies are positioned on the preform ceramic matrix composite arrangement and within the tip cavity. The ceramic matrix composite tip plies are densified to form a tip region of the composite component.
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公开(公告)号：US20170101883A1
公开(公告)日：2017-04-13
申请号：US15381825
申请日：2016-12-16
IPC分类号： F01D11/12 , C23C4/134 , B05D5/06 , B05D7/14 , C23C28/04 , F01D5/28 , F01D9/02 , C04B35/50 , C04B35/622 , C04B41/50 , C04B41/52 , C04B41/87 , C04B41/89 , C04B41/00 , C23C4/10
CPC分类号： F01D11/122 , B05D1/36 , B05D5/061 , B05D7/14 , B32B18/00 , C04B35/50 , C04B35/62222 , C04B41/009 , C04B41/5024 , C04B41/52 , C04B41/85 , C04B41/87 , C04B41/89 , C04B2111/807 , C23C4/04 , C23C4/067 , C23C4/10 , C23C4/134 , C23C14/06 , C23C14/14 , C23C16/22 , C23C16/24 , C23C28/04 , C23C28/044 , C23C28/321 , C23C28/34 , C23C28/345 , F01D5/288 , F01D9/02 , F05D2220/32 , F05D2230/312 , F05D2260/83 , F05D2300/211 , G01B11/0616 , C04B35/14 , C04B35/565 , C04B35/584 , C04B35/10 , C04B35/18 , C04B20/0036 , C04B41/4527 , C04B41/4582 , C04B2103/0021 , C04B41/524
摘要： In some examples, a coating may include at least one feature that facilitates visual determination of a thickness of the coating. For example, the coating may include a plurality of microspheres disposed at a predetermined depth of the coating. The plurality of microspheres may define a distinct visual characteristic. By inspecting the coating and viewing at least one of the microspheres, the thickness of the coating may be estimated. In some examples, the plurality of microspheres may be embedded in a matrix material, and the distinct visual characteristic of the microspheres may be different than the visual characteristic of the matrix material. In other examples, the at least one feature may include at least one distinct layer in the coating system that includes a distinct visual characteristic, such as a color of the distinct layer.
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公开(公告)号：US09613875B2
公开(公告)日：2017-04-04
申请号：US15194107
申请日：2016-06-27
申请人： HERMES-EPITEK CORP.
发明人： Takashi Kobayashi , Po-Jung Lin , Che-Lin Chen , Bu-Chin Chung
CPC分类号： H01L22/26 , C23C16/22 , C30B25/16 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/67288 , H01L22/12
摘要： A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.
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