公开(公告)号：US20190080886A1

公开(公告)日：2019-03-14

申请号：US16129299

申请日：2018-09-12

Applicant: Cellencor, Inc.

Inventor： Kenneth Kaplan

IPC: H01J37/32 ,  H03F3/19 ,  H03F3/21 ,  H01J37/244

CPC classification number: H01J37/32201 ,  H01J37/244 ,  H01J37/32311 ,  H03F3/19 ,  H03F3/21 ,  H05B6/686 ,  H05B6/705

Abstract: A microwave generating system includes a modular architecture which is configurable to provide power output from under 1-kilowatt to over 100-kilowatts. The various power levels are achieved by combining the RF outputs of multiple RF power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incorporates a dedicated embedded microcontroller for high performance real-time control response. The components are connected to a high speed digital data bus, and are commanded and supervised by a control program running on a host computer.

公开(公告)号：US20180174834A1

公开(公告)日：2018-06-21

申请号：US15889542

申请日：2018-02-06

Applicant: Euclid TechLabs, LLC

Inventor： James E. Butler

IPC: H01L21/02 ,  H01L21/66 ,  H01J37/32

CPC classification number: H01L21/02527 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32724 ,  H01J2237/3321 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02376 ,  H01L21/02579 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02656 ,  H01L21/02658 ,  H01L22/12 ,  H01L22/26

Abstract: A method of preparing a diamond crystal substrate for epitaxial deposition thereupon of a delta doping layer includes preparing an atomically smooth, undamaged diamond crystal substrate surface, which can be in the (100) plane, by polishing the surface and then etching the surface to remove subsurface damage caused by the polishing. The polishing can include a rough polish, for example in the (010) direction, followed by a fine polish, for example in the (011) direction, that removes the polishing tracks from the rough polishing. After etching the polished face can have a roughness Sa of less than 0.3 nm. An inductively coupled reactive ion etcher can apply the etching at a homogeneous etch rate using an appropriate gas mixture such as using argon and chlorine to remove between 0.1 and 10 microns of material from the polished surface.

公开(公告)号：US09860941B2

公开(公告)日：2018-01-02

申请号：US14114422

申请日：2012-04-25

Applicant: Adrien Grandemenge ,  Jean-Marie Jacomino ,  Marilena Radoiu ,  Louis Latrasse

Inventor： Adrien Grandemenge ,  Jean-Marie Jacomino ,  Marilena Radoiu ,  Louis Latrasse

IPC: H05B6/64 ,  H05B6/74 ,  H05B6/66 ,  H01J37/32

CPC classification number: H05B6/6447 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32266 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32678 ,  H05B6/664 ,  H05B6/74

Abstract: The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected PR(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f(i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power PR(i) and/or to adjust the transmitted power PT(i).

公开(公告)号：US20170229292A1

公开(公告)日：2017-08-10

申请号：US15422112

申请日：2017-02-01

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Yoji SATO ,  Takayasu SATO ,  Kazutaka TACHIBANA ,  Hiromichi NAKATA

IPC: H01J37/32

CPC classification number: H01J37/32853 ,  H01J37/32201 ,  H01J37/32477 ,  H01J37/32486 ,  H01J2237/3321

Abstract: A plasma chemical vapor deposition device includes an adhesion suppressing sheet suppressing a processing gas from adhering to an inner wall of a reactor. The adhesion suppressing sheet is arranged between a placement position of a workpiece and the inner wall of the reactor. The adhesion suppressing sheet is a fabric that includes first fiber bundles and second fiber bundles that extend in directions different from each other. In the first fiber bundles, front side portions and rear side portions are alternately arranged in a first direction. In the second fiber bundles, front side portions and rear side portions are alternately arranged in a second direction.

公开(公告)号：US20170221703A1

公开(公告)日：2017-08-03

申请号：US15420579

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/687 ,  C23C8/34

CPC classification number: H01L21/02277 ,  C23C8/34 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45551 ,  C23C28/04 ,  C23C28/046 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/332 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

公开(公告)号：US20170040145A1

公开(公告)日：2017-02-09

申请号：US15304366

申请日：2015-06-10

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： JOHN ROBERT BRANDON ,  IAN FRIEL ,  MICHAEL ANDREW COOPER ,  GEOFFREY ALAN SCARSBROOK ,  BEN LLEWLYN GREEN

IPC: H01J37/32 ,  C23C16/511 ,  C30B29/04 ,  C30B25/10 ,  C30B25/20 ,  C23C16/27 ,  C23C16/458

CPC classification number: H01J37/32201 ,  C23C16/274 ,  C23C16/458 ,  C23C16/511 ,  C30B25/105 ,  C30B25/205 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32247 ,  H01J37/32284 ,  H01J37/32293 ,  H01J37/32302 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室，其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源，用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面，其中所述多个微波源被配置为耦合所述总微波功率的至少30％ Pτ以初级微波共振模式频率f进入等离子体室，并且其中多个微波源中的至少一些是固态微波源。

公开(公告)号：US20150318148A1

公开(公告)日：2015-11-05

申请号：US14645837

申请日：2015-03-12

Applicant: MKS Instruments, Inc.

Inventor： Xing Chen ,  Chengxiang Ji ,  Erin Madden ,  IIya Pokidov ,  Kevin W. Wenzel

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/32522 ,  H05H1/46 ,  H05H2001/4622

Abstract: An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

公开(公告)号：US20150021473A1

公开(公告)日：2015-01-22

申请号：US14341362

申请日：2014-07-25

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: H01J37/05 ,  H01J37/08 ,  H01J37/32

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge.

Abstract translation: 用于分离具有不同质量或电荷的离子的装置包括耦合到微波源的波导导管，用于通过波导管道中的开口传输微波。 管道的出口端位于用于将材料从材料源运输到开口的开口处。 等离子体室通过开口与波导管连通。 等离子体腔室通过开口接收来自波导管的微波和来自管道的材料。 等离子体室包括设置在其外壁中的磁体，用于在等离子体室中形成磁场。 等离子体室包括在室的与包含开口的一侧相对的一侧的带电盖。 盖子包括提取来自等离子体室的离子束的抽吸孔。 与一个提取孔耦合的偏转器接收从等离子体室提取的离子束。 每个偏转器弯曲离子束，并提供单独的通道，用于根据其相应的质量或电荷离开离子束弯曲的不同轨迹之后捕获离子。

公开(公告)号：US20140174660A1

公开(公告)日：2014-06-26

申请号：US14127286

申请日：2012-06-29

Applicant: Masahide Iwasaki

Inventor： Masahide Iwasaki

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32211 ,  H01J37/3222

Abstract: The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage.

Abstract translation: 微波等离子体处理装置包括供电棒，该供电棒对RF偏压施加高频波，其上端连接到基座，下端连接到匹配器的高频输出端，匹配 单元; 围绕用作内部导体的供电杆的圆柱形外部导体; 和同轴线。 同轴线安装有扼流器机构，其构造成阻挡从腔室中的等离子体产生空间进入管线的不期望的微波，并且在线路中部防止微波到RF馈线的泄漏，从而抑制微波 泄漏。

公开(公告)号：US07589470B2

公开(公告)日：2009-09-15

申请号：US11343682

申请日：2006-01-31

Applicant: Lutfi Oksuz ,  Albert Rogers Ellingboe

Inventor： Lutfi Oksuz ,  Albert Rogers Ellingboe

IPC: H01J25/50 ,  H01P7/06

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32201 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

Abstract: A method and apparatus for producing a distributed plasma at atmospheric pressure. A distributed plasma can be produced at atmospheric pressure by using an inexpensive high frequency power source in communication with a waveguide having a plurality particularly configured couplers disposed therein. The plurality of particularly arranged couplers can be configured in the waveguide to enhance the electromagnetic field strength therein. The plurality of couplers have internal portions disposed inside the waveguide and spaced apart by a distance of ½ wavelength of the high frequency power source and external portions disposed outside the waveguide and spaced apart by a predetermined distance which is calculated to cause the electromagnetic fields in the external portions of adjacent couplers to couple and thereby further enhance the strength of the electromagnetic field in the waveguide. Plasma can be formed in plasma areas defined by gaps between electrodes disposed on the external portions.

Abstract translation: 一种用于在大气压下制造分布式等离子体的方法和装置。 通过使用与具有设置在其中的多个特别配置的耦合器的波导连通的便宜的高频电源，可以在大气压下产生分布式等离子体。 多个特别布置的耦合器可以配置在波导中以增强其中的电磁场强度。 多个耦合器具有设置在波导内部的内部部分，并且间隔开高频电源的1/2波长的距离和设置在波导外部的外部部分，并隔开预定距离，该预定距离被计算为使得电磁场在 相邻耦合器的外部部分耦合，从而进一步增强波导中电磁场的强度。 等离子体可以形成在由设置在外部部分上的电极之间的间隙限定的等离子体区域中。