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    Integrated multi-chip module optical interconnect platform
    262.
    发明授权
    Integrated multi-chip module optical interconnect platform 有权

    公开(公告)号：US09620489B2

    公开(公告)日：2017-04-11

    申请号：US14298875

    申请日：2014-06-06

    Applicant: Cornell University

    Inventor： Michal Lipson ,  Yoon Ho Lee

    IPC: G02B6/12 ,  H01L25/16 ,  H01L27/144 ,  H01L25/00 ,  H01L31/0232 ,  H01L33/58 ,  H01L23/13

    CPC classification number: H01L25/167 ,  G02B6/12004 ,  G02B6/12007 ,  H01L23/13 ,  H01L25/50 ,  H01L27/144 ,  H01L31/0232 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Techniques, systems, and devices are disclosed to provide multilayer platforms for integrating semiconductor integrated circuit dies, optical waveguides and photonic devices to provide intra-die or inter-die optical connectivity. For example, an integrated semiconductor device having integrated circuits respectively formed on different semiconductor integrated circuit dies is provided to include a carrier substrate structured to form openings on a top side of the carrier substrate; semiconductor integrated circuit dies fixed to bottom surfaces of the openings of the carrier substrate, each semiconductor integrated circuit die including a semiconductor substrate and an integrated circuit formed on the semiconductor substrate to include one or more circuit components, and each semiconductor integrated circuit die being structured to have a top surface substantially coplanar with the top side of the carrier substrate; and planar layers formed on top of the top surfaces of the semiconductor integrated circuit dies and the top side of the carrier substrate to include optical waveguides and photonic devices to provide (1) intra-die optical connectivity for photonic devices associated with a semiconductor integrated circuit die, or (2) inter-die optical connectivity for photonic devices associated with different semiconductor integrated circuit dies.

    RECTENNA THAT CONVERTS INFRARED RADIATION TO ELECTRICAL ENERGY
    265.
    发明申请
    RECTENNA THAT CONVERTS INFRARED RADIATION TO ELECTRICAL ENERGY 有权
    能够将红外辐射到电能的雷达

    公开(公告)号：US20160260755A1

    公开(公告)日：2016-09-08

    申请号：US14834514

    申请日：2015-08-25

    Applicant: Sandia Corporation

    Inventor： Paul Davids ,  David W. Peters

    IPC: H01L27/144 ,  H01L31/09 ,  H01L29/88 ,  H01L31/18

    CPC classification number: H01L27/144 ,  H01L29/88 ,  H01L31/09 ,  H01L31/102 ,  H01L31/18

    Abstract: Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

    Abstract translation: 本文描述了将红外（IR）辐射转换为DC能量的技术。 在一般实施例中，整流天线包括导电层。 在导电层上形成薄的绝缘体层，在薄绝缘体层上形成纳米天线。 薄的绝缘体层用作隧道二极管的隧道结。

    Optoelectronic component and method for the production thereof
    267.
    发明授权
    Optoelectronic component and method for the production thereof 有权
    光电元件及其制造方法

    公开(公告)号：US09263655B2

    公开(公告)日：2016-02-16

    申请号：US13807578

    申请日：2011-05-25

    Applicant: Lutz Hoeppel

    Inventor： Lutz Hoeppel

    IPC: H01L33/00 ,  H01L33/62 ,  H01L31/02 ,  H01L31/0236 ,  H01L33/38 ,  H01L27/144 ,  H01L31/18 ,  H01L33/02 ,  H01L33/44

    CPC classification number: H01L33/62 ,  H01L27/144 ,  H01L31/02005 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/18 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/382 ,  H01L33/44 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

    Abstract: An optoelectronic component has a semiconductor chip and a carrier, which is bonded to the semiconductor chip by means of a bonding layer of a metal or a metal alloy. The semiconductor chip includes electrical connection regions facing the carrier and the carrier includes electrical back contacts on its back remote from the semiconductor chip. The back contacts are connected electrically conductively to the first electrical or second connection region respectively, in each case by at least one via extending through the carrier. The first and/or second electrical back contact is connected to the first or second electrical connection region respectively by at least one further via extending through the carrier.

    Abstract translation: 光电子部件具有通过金属或金属合金的接合层与半导体芯片接合的半导体芯片和载体。 半导体芯片包括面向载体的电连接区域，载体在远离半导体芯片的背面上包括电背接触。 背部触点分别与第一电连接区域或第二连接区域电连接，在每种情况下都通过延伸穿过载体的至少一个通孔连接。 第一和/或第二电背触点分别通过延伸穿过载体的至少一个另外的通孔连接到第一或第二电连接区域。

    METHODS FOR MAKING WAFER LEVEL OPTOELECTRONIC DEVICE PACKAGES
    268.
    发明申请
    METHODS FOR MAKING WAFER LEVEL OPTOELECTRONIC DEVICE PACKAGES 有权
    制造水平光电器件封装的方法

    公开(公告)号：US20150207016A1

    公开(公告)日：2015-07-23

    申请号：US14671619

    申请日：2015-03-27

    Applicant: Intersil Americas LLC

    Inventor： Sri Ganesh A. Tharumalingam ,  Seck Jiong Wong

    IPC: H01L31/16 ,  H01L31/18 ,  H01L31/02 ,  H01L25/16

    CPC classification number: H01L31/16 ,  G01S7/4813 ,  G01S17/026 ,  H01L24/97 ,  H01L25/165 ,  H01L25/167 ,  H01L27/144 ,  H01L27/1446 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/173 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.

    Abstract translation: 本文描述了光电子器件（例如，光学接近传感器），用于制造光电子器件的方法，以及包括光电器件的系统。 光电子器件包括光检测器管芯，其包括光检测器传感器区域。 光源管芯附接到不包括光检测器传感器区域的光检测器管芯的一部分。 在光检测器传感器区域和光源管芯之间形成不透明屏障，并且透光材料封装光检测器传感器区域和光源管芯。 光源管芯不需要连接光源管芯和光检测器管芯的单独的基底（例如，PCB衬底），光源管芯连接到光检测器管芯，使得光检测器管芯用作基座 用于成品光电器件。 这样做可以降低成本并减少总封装尺寸。

    Partitioned silicon photomultiplier with delay equalization
    269.
    发明授权
    Partitioned silicon photomultiplier with delay equalization 有权
    具有延迟均衡的分区硅光电倍增管

    公开(公告)号：US09082675B2

    公开(公告)日：2015-07-14

    申请号：US13964987

    申请日：2013-08-12

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster

    IPC: H01L27/144 ,  H01L27/146

    CPC classification number: H01L27/14634 ,  H01L27/144

    Abstract: A photon detection device includes a first wafer having an array of photon detection cells partitioned into a plurality of photon detection blocks arranged in the first wafer. A second wafer having a plurality of block readout circuits arranged thereon is also included. An interconnect wafer is disposed between the first wafer and the second wafer. The interconnect wafer includes a plurality of conductors having substantially equal lengths. Each one of the plurality of conductors is coupled between a corresponding one of the plurality of photon detection blocks in the first wafer and a corresponding one of the plurality of block readout circuits such that signal propagation delays between each one of the plurality of photon detection blocks and each one of the plurality of block readout circuits are substantially equal.

    Abstract translation: 光子检测装置包括具有分隔成布置在第一晶片中的多个光子检测块的光子检测单元阵列的第一晶片。 还包括具有布置在其上的多个块读出电路的第二晶片。 互连晶片设置在第一晶片和第二晶片之间。 互连晶片包括具有基本相等长度的多个导体。 多个导体中的每一个耦合在第一晶片中的多个光子检测块中的对应一个和多个块读出电路中的相应一个之间，使得多个光子检测块中的每一个之间的信号传播延迟 并且多个块读出电路中的每一个基本相等。

    Optoelectronic integrated circuit
    270.
    发明授权
    Optoelectronic integrated circuit 有权
    光电集成电路

    公开(公告)号：US09082637B2

    公开(公告)日：2015-07-14

    申请号：US13921311

    申请日：2013-06-19

    Applicant: Geoff W. Taylor

    Inventor： Geoff W. Taylor

    IPC: H01S5/00 ,  H01L29/06 ,  H01S5/34 ,  H01L21/02 ,  H01L29/12 ,  H01L29/15 ,  H01S5/026 ,  H01S5/062 ,  H01S5/30 ,  G02B6/125 ,  B82Y10/00 ,  H01S5/183

    CPC classification number: H01L29/0688 ,  B82Y10/00 ,  G02B6/125 ,  H01L21/0259 ,  H01L27/144 ,  H01L27/15 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/155 ,  H01L29/66977 ,  H01L29/7786 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01S5/026 ,  H01S5/06203 ,  H01S5/18358 ,  H01S5/309 ,  H01S5/34 ,  H01S5/3412

    Abstract: A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed.

    Abstract translation: 半导体器件包括支撑多个层的衬底，其包括从量子阱（QD-in-QW）结构中的量子点偏移的至少一个调制掺杂量子阱（QW）结构。 调制掺杂QW结构包括通过间隔层与至少一个QW隔开的电荷片。 QD-QW结构将QD嵌入在一个或多个QW中。 QD-QW结构可以包括由势垒层分开的至少一个模板/发射子结构对，模板子结构具有比发射子结构更小的尺寸QD。 可以提供多个QD-in-QW结构以支持不同特征波长（例如1300nm至1550nm范围内的光波长）的电磁辐射的处理（发射，吸收，放大）。 该装置可以实现一种集成电路，该集成电路包括处理由QD-in-QW结构的QD支持的特征波长的电磁辐射的各种各样的装置。 还描述和要求保护其他半导体器件。

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