Abstract:
In some embodiments, a method and/or a system may include an integrated circuit. The integrated circuit may include a semiconductor die. The integrated circuit may include a plurality of wiring layers. At least one metal-insulator-metal (MIM) capacitor may be formed within the plurality of wiring layers. The integrated circuit may include a circuit. The circuit may include at least an inductor and a voltage regulator which, with the MIM capacitor, forms a voltage regulator for the semiconductor die. The circuit may be coupled substantially below at least a portion of the MIM capacitor in the plurality of layers. The circuit may be electrically coupled to the capacitor through the plurality of wiring layers. The integrated circuit may include a plurality of electrical connectors, the plurality of electrical connectors coupled to the second surface at points separate from an area of the second surface that is occupied by the circuit.
Abstract:
Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.
Abstract:
A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals. The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
Abstract:
Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), stacked die between the first and second RDLs, and conductive pillars extending between the RDLs. A molding compound may encapsulate the stacked die and conductive pillars between the first and second RDLs.
Abstract:
In some embodiments, a system may include an integrated circuit. The integrated circuit may include a substrate including a first surface, a second surface substantially opposite of the first surface, and a first set of electrical conductors coupled to the first surface. The first set of electrical conductors may function to electrically connect the integrated circuit to a circuit board. The integrated circuit may include a semiconductor die coupled to the second surface of the substrate using a second set of electrical conductors. The integrated circuit may include a passive device dimensioned to be integrated with the integrated circuit. The passive device may be positioned between the second surface and at least one of the first set of electrical conductors. The die may be electrically connected to a second side of the passive device. A first side of the passive device may be available to be electrically connected to a second device.
Abstract:
Vertically stacked system in package structures are described. In an embodiment, a package includes a first level molding and fan out structure, a third level molding and fan out structure, and a second level molding and fan out structure between the first and third levels. The second level molding and fan out structure includes back-to-back facing die, with a front surface of each die bonded to a redistribution layer.
Abstract:
Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), and a plurality of die attached to the front and back side of the first RDL. The first and second RDLs are coupled together with a plurality of conductive pillars extending from the back side of the first RDL to a front side of the second RDL.
Abstract:
MEMS packages and modules are described. In an embodiment, a module includes a package mounted within an opening in a module board. The package includes a flexible wiring board mounted to a back surface of the module board and spanning across the opening in the module board. A die is mounted on the flexible wiring board and is encapsulated within an overmold. An air gap exists laterally between the overmold and side surface of the opening in the module board.
Abstract:
In some embodiments, a carrier substrate for an integrated circuit may include a core, a first plurality of openings, and a first insulating material. The core may include a first surface and a second surface substantially opposing the first surface. The first plurality of openings may extend from the first surface to the second surface of the core. In some embodiments, the first insulating material may be applied to a surface of the first plurality of openings. In some embodiments, the first plurality of openings may include a first conductor extending through each of the first plurality of openings from the first surface to the second surface. In some embodiments, at least a first subset of the first plurality of openings may include a first charge and at least a second subset of the first plurality of openings may include a second charge. The first charge and the second charge may be different.
Abstract:
Chip structures and electronic modules including a power delivery network (PDN) routing structure and signal routing structure to balance power, signaling, and thermal requirements are described. In an embodiment, the chip includes a device layer, a PDN routing structure on top of the device layer, and a signal routing structure underneath the device layer.