公开(公告)号：US20230042099A1

公开(公告)日：2023-02-09

申请号：US17757906

申请日：2020-11-26

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Nobutake KABUKI ,  Ryota IFUKU ,  Masahito SUGIURA ,  Hirokazu UEDA

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/768 ,  H01L21/285 ,  C23C16/26 ,  C23C16/511 ,  C01B32/186

Abstract: A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

公开(公告)号：US20190237326A1

公开(公告)日：2019-08-01

申请号：US16257790

申请日：2019-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KOMIYA ,  Hirokazu UEDA ,  Atsushi ENDO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32201 ,  H01L21/02112 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/68714

Abstract: There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.

公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC classification number: H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US20180012763A1

公开(公告)日：2018-01-11

申请号：US15539224

申请日：2015-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yuuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01J37/32 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32403 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/335 ,  H01J2237/3365 ,  H01L21/02057 ,  H01L29/66803

Abstract: Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.

公开(公告)号：US20140367699A1

公开(公告)日：2014-12-18

申请号：US14474835

申请日：2014-09-02

Applicant: TOHOKU UNIVERSITY ,  FUJI ELECTRIC CO., LTD. ,  TOKYO ELECTRON LIMITED

Inventor： Akinobu TERAMOTO ,  Hiroshi KAMBAYASHI ,  Hirokazu UEDA ,  Yuichiro MOROZUMI ,  Katsushige HARADA ,  Kazuhide HASEBE ,  Tadahiro OHMI

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L21/28 ,  H01L23/00 ,  H01L29/51 ,  H01L29/778

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Abstract translation: 制造半导体器件的方法是制造包括构成半导体层的GaN（氮化镓）的半导体器件，并且包括形成栅极绝缘膜的步骤。 在该步骤中，通过使用微波等离子体在包含GaN的氮化物层上形成选自由SiO 2膜和Al 2 O 3膜构成的组中的至少一种膜，并且所形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US20240420970A1

公开(公告)日：2024-12-19

申请号：US18703525

申请日：2022-10-25

Applicant: Tokyo Electron Limited ,  Tokyo University of Science Foundation

Inventor： Takao OKABE ,  Hirokazu UEDA ,  Naoki UMESHITA ,  Mitsuaki IWASHITA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Tamotsu MORIMOTO ,  Toshikazu AKIMOTO

IPC: H01L21/67

Abstract: A liquid circulation system according to an aspect of the present disclosure is for recovering an ionic liquid supplied into a vacuum chamber and returning the recovered ionic liquid back again into the vacuum chamber, and includes a storage tank having an opening communicating with an inside of the vacuum chamber and configured to store the ionic liquid recovered from the inside of the vacuum chamber through the opening, a viscosity pump provided below the storage tank in a vertical direction, and a pipe configured to supply the ionic liquid inside the storage tank into the vacuum chamber.

公开(公告)号：US20240087916A1

公开(公告)日：2024-03-14

申请号：US18499667

申请日：2023-11-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: H01L21/67 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/67051 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/50 ,  H01L21/6704

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

公开(公告)号：US20230226571A1

公开(公告)日：2023-07-20

申请号：US18096537

申请日：2023-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeo NAKANO ,  Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Ryuichi ASAKO ,  Kenichi UKI

IPC: B05D7/24 ,  B05D1/02

CPC classification number: B05D7/24 ,  B05D1/025 ,  B05D2506/10

Abstract: A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.

公开(公告)号：US20230135523A1

公开(公告)日：2023-05-04

申请号：US17907699

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Hiroyuki NAGAI ,  Mitsuaki IWASHITA ,  Hirokazu UEDA

IPC: F25B21/02 ,  H10N15/10 ,  F25B49/00

Abstract: An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

公开(公告)号：US20230094546A1

公开(公告)日：2023-03-30

申请号：US17954105

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Naoki UMESHITA ,  Toshikazu AKIMOTO ,  Hiroki MAEHARA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

Abstract: An apparatus for processing a substrate by supplying a processing gas to the substrate in a processing container. The apparatus comprises: a mounting table provided in the processing container and for mounting the substrate; a gas shower head comprising a gas diffusion space provided at a position facing the mounting table and for diffusing the processing gas, and a shower plate having a plurality of gas supply holes for supplying the processing gas diffused in the gas diffusion space to the processing container; a gas supply portion provided to supply the processing gas to the gas diffusion space and having a flow rate adjusting portion for the processing gas; a pressure sensor portion provided in the gas diffusion space and to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space; and a controller to output a control signal for adjusting a flow rate of the processing gas.