Abstract:
Apparatuses and methods relating generally to a microelectronic package for wafer-level chip scale packaging with fan-out are disclosed. In an apparatus, there is a substrate having an upper surface and a lower surface opposite the upper surface. A microelectronic device is coupled to the upper surface with the microelectronic device in a face-up orientation. Wire bond wires are coupled to and extending away from the upper surface. Posts of the microelectronic device extend away from a front face thereof. Conductive pads are formed in the substrate associated with the wire bond wires for electrical conductivity.
Abstract:
Package-on-package (“PoP”) devices with same level wafer-level packaged (“WLP”) components and methods therefor are disclosed. In a PoP device, a first integrated circuit die is surface mount coupled to an upper surface of a package substrate. Conductive lines are coupled to the upper surface of the package substrate in a fan-out region. The first conductive lines extend away from the upper surface of the package substrate. A molding layer is formed over the upper surface of the package substrate, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines. WLP microelectronic components are located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines.
Abstract:
Package-on-package (“PoP”) devices with multiple levels and methods therefor are disclosed. In a PoP device, a first integrated circuit die is surface mount coupled to an upper surface of a package substrate. First and second conductive lines are coupled to the upper surface of the package substrate respectively at different heights in a fan-out region. A first molding layer is formed over the upper surface of the package substrate. A first and a second wafer-level packaged microelectronic component are located above an upper surface of the first molding layer respectively surface mount coupled to a first and a second set of upper portions of the first conductive lines. A third and a fourth wafer-level packaged microelectronic component are located above the first and the second wafer-level packaged microelectronic component respectively surface mount coupled to a first and a second set of upper portions of the second conductive lines.
Abstract:
Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (“PoP”) with enhanced tolerance for warping. In one such packaged microelectronic device, interconnect structures are in an outer region of the packaged microelectronic device. A microelectronic device is coupled in an inner region of the packaged microelectronic device inside the outer region. A dielectric layer surrounds at least portions of shafts of the interconnect structures and along sides of the microelectronic device. The interconnect structures have first ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.
Abstract:
Apparatuses and methods relating generally to a microelectronic package for wafer-level chip scale packaging with fan-out are disclosed. In an apparatus, there is a substrate having an upper surface and a lower surface opposite the upper surface. A microelectronic device is coupled to the upper surface with the microelectronic device in a face-up orientation. Wire bond wires are coupled to and extending away from the upper surface. Posts of the microelectronic device extend away from a front face thereof. Conductive pads are formed in the substrate associated with the wire bond wires for electrical conductivity.
Abstract:
Apparatuses relating generally to a microelectronic package having protection from interference are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface and has a ground plane. A first microelectronic device is coupled to the upper surface of the substrate. Wire bond wires are coupled to the ground plane for conducting the interference thereto and extending away from the upper surface of the substrate. A first portion of the wire bond wires is positioned to provide a shielding region for the first microelectronic device with respect to the interference. A second portion of the wire bond wires is not positioned to provide the shielding region. A second microelectronic device is coupled to the substrate and located outside of the shielding region. A conductive surface is over the first portion of the wire bond wires for covering the shielding region.
Abstract:
An assembly includes a plurality of stacked encapsulated microelectronic packages, each package including a microelectronic element having a front surface with a plurality of chip contacts at the front surface and edge surfaces extending away from the front surface. An encapsulation region of each package contacts at least one edge surface and extends away therefrom to a remote surface of the package. The package contacts of each package are disposed at a single one of the remote surfaces, the package contacts facing and coupled with corresponding contacts at a surface of a substrate nonparallel with the front surfaces of the microelectronic elements therein.
Abstract:
A microelectronic assembly includes a stack of microelectronic elements, e.g., semiconductor chips, each having a front surface defining a respective plane of a plurality of planes. A leadframe interconnect joined to a contact at a front surface of each chip may extend to a position beyond the edge surface of the respective microelectronic element. The chip stack is mounted to support element at an angle such that edge surfaces of the chips face a major surface of the support element that defines a second plane that is transverse to, i.e., not parallel to the plurality of parallel planes. The leadframe interconnects are electrically coupled at ends thereof to corresponding contacts at a surface of the support element.