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    Design structure for semiconductor on-chip repair scheme for negative bias temperature instability
    36.
    发明授权
    Design structure for semiconductor on-chip repair scheme for negative bias temperature instability 有权
    用于负偏压温度不稳定性的半导体片上修复方案的设计结构

    公开(公告)号：US07890893B2

    公开(公告)日：2011-02-15

    申请号：US12050990

    申请日：2008-03-19

    Applicant: Ronald J. Bolam ,  Tom C. Lee ,  Timothy D. Sullivan

    Inventor： Ronald J. Bolam ,  Tom C. Lee ,  Timothy D. Sullivan

    IPC: G06F17/50

    CPC classification number: H01L23/345 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a design structure for a semiconductor chip structure that incorporates a localized, on-chip, repair scheme for devices that exhibit performance degradation as a result of negative bias temperature instability (NBTI). The repair scheme utilizes a heating element above each device. The heating element is configured so that it can receive transmission line pulses and, thereby generate enough heat to raise the adjacent device to a temperature sufficient to allow for performance recovery. Specifically, high temperatures (e.g., between approximately 300-400° C. or greater) in the absence of bias can accelerate the recovery process to a matter of seconds as opposed to days or months. The heating element can be activated, for example, on demand, according to a pre-set service schedule, and/or in response to feedback from a device performance monitor.

    Abstract translation: 公开了一种用于半导体芯片结构的设计结构，其包含由于负偏压温度不稳定性（NBTI）而表现出性能劣化的器件的局部的片上修复方案。 修理方案在每个设备上使用加热元件。 加热元件被配置成使得其可以接收传输线脉冲，并且由此产生足够的热量以将相邻设备升高到足以允许性能恢复的温度。 具体而言，在不存在偏压的情况下，高温（例如，约300-400℃或更高）可以将恢复过程加速到几秒钟，而不是几天或几个月。 加热元件例如可以根据预先设定的服务时间表和/或响应于来自设备性能监视器的反馈而被激活。

    Design structure for alpha particle sensor in SOI technology and structure thereof
    37.
    发明授权
    Design structure for alpha particle sensor in SOI technology and structure thereof 有权
    SOI技术中α粒子传感器的设计结构及其结构

    公开(公告)号：US07875854B2

    公开(公告)日：2011-01-25

    申请号：US12099307

    申请日：2008-04-08

    Applicant: Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

    Inventor： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

    IPC: G01T1/178

    CPC classification number: H01L31/115

    Abstract: The invention relates to a design structure, and more particularly, to a design structure for an alpha particle sensor in SOI technology and a circuit thereof. The structure is a silicon-on-insulator radiation detector which includes: a charge collection node; a precharge transistor that has a source from the charge collection node, a drain at Vdd, and a gate controlled by a precharge signal; an access transistor that has a source from the charge collection node, a drain connecting to a readout node, and a gate controlled by a read-out signal; and a detector pulldown transistor having a drain from the charge collection node, a source to ground, and a grounded gate.

    Abstract translation: 本发明涉及一种设计结构，更具体地说，涉及SOI技术中的α粒子传感器及其电路的设计结构。 该结构是绝缘体上硅辐射检测器，其包括：电荷收集节点; 具有来自电荷收集节点的源极，Vdd处的漏极和由预充电信号控制的栅极的预充电晶体管; 具有来自电荷收集节点的源极，与读出节点连接的漏极和由读出信号控制的栅极的存取晶体管; 以及检测器下拉晶体管，其具有来自电荷收集节点的漏极，源极接地和接地栅极。

    Semiconductor on-chip repair scheme for negative bias temperature instability
    39.
    发明授权
    Semiconductor on-chip repair scheme for negative bias temperature instability 有权
    半导体片上修复方案负偏温度不稳定性

    公开(公告)号：US07838958B2

    公开(公告)日：2010-11-23

    申请号：US11971937

    申请日：2008-01-10

    Applicant: Ronald J. Bolam ,  Tom C. Lee ,  Timothy D. Sullivan

    Inventor： Ronald J. Bolam ,  Tom C. Lee ,  Timothy D. Sullivan

    IPC: H01L31/058 ,  H01L37/00 ,  H01L21/00

    CPC classification number: H01L23/345 ,  H01L22/14 ,  H01L22/20 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed are embodiments of a semiconductor chip structure and a method that incorporate a localized, on-chip, repair scheme for devices that exhibit performance degradation as a result of negative bias temperature instability (NBTI). The repair scheme utilizes a heating element above each device. The heating element is configured so that it can receive transmission line pulses and, thereby generate enough heat to raise the adjacent device to a temperature sufficient to allow for performance recovery. Specifically, high temperatures (e.g., between approximately 300-400° C. or greater) in the absence of bias can accelerate the recovery process to a matter of seconds as opposed to days or months. The heating element can be activated, for example, on demand, according to a pre-set service schedule, and/or in response to feedback from a device performance monitor.

    Abstract translation: 公开了半导体芯片结构的实施例和一种对于由于负偏压温度不稳定性（NBTI）而表现出性能劣化的器件而并入局部的片上修复方案的方法。 修理方案在每个设备上使用加热元件。 加热元件被配置成使得其可以接收传输线脉冲，并且由此产生足够的热量以将相邻设备升高到足以允许性能恢复的温度。 具体而言，在不存在偏压的情况下，高温（例如，约300-400℃或更高）可以将恢复过程加速到几秒钟，而不是几天或几个月。 加热元件例如可以根据预先设定的服务时间表和/或响应于来自设备性能监视器的反馈而被激活。

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