公开(公告)号：US11201128B2

公开(公告)日：2021-12-14

申请号：US14998093

申请日：2015-12-23

Applicant: Intel Corporation

Inventor： Pramod Malatkar ,  Weng Hong Teh ,  John S. Guzek ,  Robert L. Sankman

IPC: H01L23/00 ,  H01L27/08 ,  H01L23/48 ,  H01L23/538 ,  H01L23/552

Abstract: A packaged semiconductor die with a bumpless die-package interface and methods of fabrication are described. For example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines, one of which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. In another example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines with a layer of conductive vias disposed thereon. At least one of the conductive lines is coupled directly to a conductive via of the semiconductor die which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate.

公开(公告)号：US10453799B2

公开(公告)日：2019-10-22

申请号：US15346568

申请日：2016-11-08

Applicant: INTEL CORPORATION

Inventor： Deepak V. Kulkarni ,  Russell K. Mortensen ,  John S. Guzek

IPC: H01L23/538 ,  H01L21/50 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/768 ,  H01L23/48 ,  H01L23/485 ,  H01L25/065 ,  H01L25/16 ,  H01L25/00 ,  H01L49/02

Abstract: Embodiments of the present disclosure are directed towards package assemblies, as well as methods for forming package assemblies and systems incorporating package assemblies. A package assembly may include a substrate including a plurality of build-up layers, such as bumpless build-up layer (BBUL). In various embodiments, electrical routing features may be disposed on an outer surface of the substrate. In various embodiments, a primary logic die and a second die or capacitor may be embedded in the plurality of build-up layers. In various embodiments, an electrical path may be defined in the plurality of build-up layers to route electrical power or a ground signal between the second die or capacitor and the electrical routing features, bypassing the primary logic die.

公开(公告)号：US20180263117A1

公开(公告)日：2018-09-13

申请号：US15810800

申请日：2017-11-13

Applicant: Intel Corporation

Inventor： Sasha N. Oster ,  Robert L. Sankman ,  Charles Gealer ,  Omkar Karhade ,  John S. Guzek ,  Ravindranath V. Mahajan ,  James C. Matayabas, JR. ,  Johanna M. Swan ,  Feras Eid ,  Shawna Liff ,  Timothy McIntosh ,  Telesphor Kamgaing ,  Adel A. Elsherbini ,  Kemal Aygun

IPC: H05K1/18 ,  H01L23/00

CPC classification number: H05K1/189 ,  G06F1/163 ,  H01L21/568 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H05K1/0393 ,  H05K1/181 ,  H05K1/185 ,  H05K13/0469 ,  H05K2201/0137 ,  H05K2203/1469 ,  Y10T29/49146 ,  H01L2924/00

Abstract: This disclosure relates generally to devices, systems, and methods for making a flexible microelectronic assembly. In an example, a polymer is molded over a microelectronic component, the polymer mold assuming a substantially rigid state following the molding. A routing layer is formed with respect to the microelectronic component and the polymer mold, the routing layer including traces electrically coupled to the microelectronic component. An input is applied to the polymer mold, the polymer mold transitioning from the substantially rigid state to a substantially flexible state upon application of the input.

公开(公告)号：US09871026B2

公开(公告)日：2018-01-16

申请号：US15068262

申请日：2016-03-11

Applicant: Intel Corporation

Inventor： John S. Guzek ,  Debendra Mallik ,  Sasha N. Oster ,  Timothy E. McIntosh

IPC: H01L23/02 ,  H01L25/18 ,  H01L25/00 ,  H01L23/00 ,  H01L23/48 ,  H01L23/31 ,  H01L23/367 ,  H01L23/538 ,  H01L25/065 ,  H01L23/498

CPC classification number: H01L25/18 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/2518 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1427 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15321 ,  H01L2924/16251 ,  H01L2924/182

Abstract: Embodiment of the present disclosure describe integrated circuit package assemblies that allow for relatively short connections between devices such as a processor and memory. In one embodiment, a package assembly includes a die embedded in a subpackage directly coupled to another die attached to the subpackage. In some embodiments the subpackage may also contain power management devices. In some embodiments the die embedded in the subpackage and/or the power management device may overlap, or be located in, a region defined by the die coupled to the subpackage such that they are located between the die coupled to the subpackage and a substrate underlying the subpackage. Other embodiments may be described and/or claimed.

公开(公告)号：US20170200677A1

公开(公告)日：2017-07-13

申请号：US15469964

申请日：2017-03-27

Applicant: INTEL CORPORATION

Inventor： Qing Ma ,  Johanna M. Swan ,  Robert Starkston ,  John S. Guzek ,  Robert L. Sankman ,  Aleksandar Aleksov

IPC: H01L23/538 ,  H01L25/065 ,  H01L21/683 ,  H01L21/48 ,  H01L23/498 ,  H01L23/15 ,  H01L23/00

CPC classification number: H01L23/5386 ,  B32B2457/08 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/09 ,  H01L24/13 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/08238 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/81192 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/8185 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/18162 ,  H01L2924/2064 ,  H01L2924/20641 ,  H05K1/0298 ,  H05K1/0306 ,  H05K1/115 ,  H05K1/185 ,  H05K3/4688 ,  H05K2201/017 ,  H05K2203/1469 ,  Y10T156/1057 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

公开(公告)号：US09691728B2

公开(公告)日：2017-06-27

申请号：US14629350

申请日：2015-02-23

Applicant: INTEL CORPORATION

Inventor： Robert M. Nickerson ,  Min Tao ,  John S. Guzek

IPC: H01L23/52 ,  H01L29/24 ,  H01L23/48 ,  H01L23/49 ,  H05K1/18 ,  H01L23/00 ,  H05K3/46 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18

CPC classification number: H01L24/19 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/4985 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/06 ,  H01L24/16 ,  H01L24/20 ,  H01L24/73 ,  H01L24/92 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24225 ,  H01L2224/73259 ,  H01L2224/821 ,  H01L2224/92224 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/3511 ,  H05K1/185 ,  H05K1/186 ,  H05K3/4682 ,  H05K2201/10674 ,  H05K2203/1469 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/00

Abstract: An apparatus including a die including a first side and an opposite second side including a device side with contact points; and a build-up carrier including at least one layer of conductive material disposed on a first side of the die, and a plurality of alternating layers of conductive material and dielectric material disposed on the second side of the die, wherein the at least one layer of conductive material on the first side of the die is coupled to at least one of (1) at least one of the alternating layers of conductive material on the second side of the die and (2) at least one of the contact points of the die. A method including forming a first portion of a build-up carrier adjacent one side of a die, and forming a second portion of the build-up carrier adjacent another side of the die.

公开(公告)号：US09576909B2

公开(公告)日：2017-02-21

申请号：US14367711

申请日：2013-08-21

Applicant: INTEL CORPORATION

Inventor： Weng Hong Teh ,  John S. Guzek ,  Robert L. Sankman

IPC: H01L21/00 ,  H01L29/40 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56 ,  H01L23/498 ,  H01L25/10

CPC classification number: H01L23/5389 ,  H01L21/563 ,  H01L21/568 ,  H01L23/49816 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/8203 ,  H01L2224/82031 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/18162

Abstract: Embodiments of the present disclosure are directed towards bumpless interfaces to an embedded silicon die, in integrated circuit (IC) package assemblies. In one embodiment, a method includes forming a surrounding portion of dielectric material defining a cavity therein; placing at least one die in the cavity, the die including a contact; depositing a dielectric material on the die and the surrounding portion; etching the dielectric material to expose the contact; and depositing conductive material onto the contact. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例针对集成电路（IC）封装组件中的嵌入式硅管芯的无扰动接口。 在一个实施例中，一种方法包括在其中形成限定空腔的电介质材料的周围部分; 将至少一个模具放置在所述空腔中，所述模具包括接触件; 在模具和周围部分上沉积电介质材料; 蚀刻介电材料以暴露接触; 并将导电材料沉积到触点上。 可以描述和/或要求保护其他实施例。

公开(公告)号：US09269701B2

公开(公告)日：2016-02-23

申请号：US14818902

申请日：2015-08-05

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L21/44 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20150179559A1

公开(公告)日：2015-06-25

申请号：US14624873

申请日：2015-02-18

Applicant: Intel Corporation

Inventor： Ravi K. Nalla ,  John S. Guzek ,  Javier Soto Gonzalez ,  Drew W. Delaney ,  Hamid R. Azimi

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/768 ,  H01L21/02 ,  H01L23/482 ,  H01L23/522

CPC classification number: H01L23/49822 ,  H01L21/02109 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76897 ,  H01L23/4824 ,  H01L23/498 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/552 ,  H01L23/645 ,  H01L24/19 ,  H01L24/20 ,  H01L25/16 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/1206 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/18162 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/4682 ,  H01L2924/00

Abstract: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include attaching a die to a carrier material, wherein the carrier material comprises a top layer and a bottom layer separated by an etch stop layer; forming a dielectric material adjacent the die, forming a coreless substrate by building up layers on the dielectric material, and then removing the top layer carrier material and etch stop layer from the bottom layer carrier material.

Abstract translation: 描述了形成微电子封装结构的方法及由此形成的相关结构。 这些方法可以包括将管芯附接到载体材料，其中载体材料包括由蚀刻停止层分隔的顶层和底层; 在模具附近形成电介质材料，通过在电介质材料上形成层而形成无芯衬底，然后去除顶层载体材料并从底层载体材料蚀刻停止层。

公开(公告)号：US20150156869A1

公开(公告)日：2015-06-04

申请号：US14618235

申请日：2015-02-10

Applicant: Intel Corporation

Inventor： Qing Ma ,  Johanna M. Swan ,  Robert Starkston ,  John S. Guzek ,  Robert L. Sankman ,  Aleksandar Aleksov

IPC: H05K1/03 ,  H01L21/48 ,  H05K1/11 ,  H01L23/498 ,  H05K1/02 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/5386 ,  B32B2457/08 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/09 ,  H01L24/13 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/08238 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/81192 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/8185 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/18162 ,  H01L2924/2064 ,  H01L2924/20641 ,  H05K1/0298 ,  H05K1/0306 ,  H05K1/115 ,  H05K1/185 ,  H05K3/4688 ,  H05K2201/017 ,  H05K2203/1469 ,  Y10T156/1057 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

Abstract translation: 本说明书的实施例涉及制造微电子结构的领域。 微电子结构可以包括与轨迹路由结构分开形成的玻璃布线结构，其中玻璃布线结构以层叠或嵌入的形式结合到迹线布线基板中。 还公开了微电子封装的实施例，其包括设置在微电子衬底的玻璃布线结构附近并通过多个互连与微电子衬底耦合的至少一个微电子器件。 此外，公开了微电子结构的实施例，其包括嵌入微电子密封剂内的至少一个微电子器件，该微电子器件具有连接到微电子密封剂的玻璃布线结构和形成在玻璃布线结构上的迹线布线结构。