公开(公告)号：US09593434B2

公开(公告)日：2017-03-14

申请号：US14255016

申请日：2014-04-17

Applicant: Veeco Instruments Inc.

Inventor： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC: C30B25/14 ,  C23C16/455 ,  C23C16/458 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C23C16/52

CPC classification number: C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

Abstract: In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

Abstract translation: 在用于在衬底（3）上生长外延层的旋转盘式反应器（1）中，在与盘旋转轴线不同的径向距离处朝向衬底的气体具有基本上相同的速度。 指向远离轴线（10a）的盘的部分的气体可以包括比指向靠近轴线（10d）的盘的部分的气体更高浓度的反应气体（4），使得衬底的部分 与轴（14）不同距离的表面每单位面积接收基本相同量的反应气体（4）。 在反应器内实现期望的流动模式，同时允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US20170051409A1

公开(公告)日：2017-02-23

申请号：US15164915

申请日：2016-05-26

Applicant: Young Jin NOH ,  Dong Min SON ,  Jae Myung CHOE ,  Jae Young AHN ,  Cheol Kyu YANG

Inventor： Young Jin NOH ,  Dong Min SON ,  Jae Myung CHOE ,  Jae Young AHN ,  Cheol Kyu YANG

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45574 ,  C23C16/045 ,  C23C16/45546 ,  C23C16/45578 ,  H01L28/00

Abstract: A thin film deposition apparatus, including a processing chamber; a boat in the processing chamber, the boat to accommodate a plurality of substrates therein; and a nozzle to supply a source gas to the processing chamber to form a thin film on each of the substrates, the nozzle including a plurality of T-shaped nozzle pipes, each of the T-shaped nozzle pipes including a first pipe having closed ends and a second pipe coupled to a middle portion of the first pipe.

Abstract translation: 一种薄膜沉积设备，包括处理室; 在处理室中的船，其中容纳多个基板的船; 以及喷嘴，用于将源气体供应到处理室以在每个基板上形成薄膜，喷嘴包括多个T形喷嘴管，每个T形喷嘴管包括具有封闭端的第一管 以及联接到所述第一管的中间部分的第二管。

公开(公告)号：US20160322200A1

公开(公告)日：2016-11-03

申请号：US15142022

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Xinhai HAN ,  Praket P. JHA ,  Masaki OGATA ,  Zhijun JIANG ,  Allen KO ,  Ndanka O. MUKUTI ,  Thuy BRITCHER ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Bok Hoen KIM

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  H01J37/32091

Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Abstract translation: 提供了一种双通道花洒的方法和装置。 在一个实施例中，喷头包括主体，该主体包括导电材料，该导电材料具有多个形成的第一开口，其包括第一气体通道和穿过其中形成的多个第二开口，其包括与第一气体通道流体分离的第二气体通道， 的第一开口具有与每个第二开口不同的几何形状。

公开(公告)号：US09484249B1

公开(公告)日：2016-11-01

申请号：US15058718

申请日：2016-03-02

Applicant: Hitachi Kokusai Electric Inc.

Inventor： Naofumi Ohashi ,  Satoshi Takano

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/66

CPC classification number: H01L21/76819 ,  C23C16/45574 ,  C23C16/52 ,  H01L21/76801 ,  H01L21/76807 ,  H01L22/12 ,  H01L22/20

Abstract: A technique capable of suppressing a variation in a characteristic of a semiconductor device includes: (a) polishing a substrate including: a first insulating film having a first groove; and a first metal film formed in the first groove and on the first insulating film; (b) forming a second insulating film on the substrate after performing (a); (c) polishing the second insulating film; (d) measuring a thickness distribution of the second insulating film on the substrate after performing (c); and (e) forming a third insulating film having a thickness distribution different from that of the second insulating film measured in (d) to compensate for a thickness distribution of a stacked insulating film including the second insulating film and the third insulating film.

Abstract translation: 能够抑制半导体器件的特性变化的技术包括：（a）研磨衬底，其包括：具有第一沟槽的第一绝缘膜; 以及形成在所述第一槽和所述第一绝缘膜上的第一金属膜; （b）在执行（a）之后，在所述基板上形成第二绝缘膜; （c）抛光第二绝缘膜; （d）在执行（c）之后测量所述基板上的所述第二绝缘膜的厚度分布; 和（e）形成具有与（d）中测量的第二绝缘膜的厚度分布不同的第三绝缘膜，以补偿包括第二绝缘膜和第三绝缘膜的堆叠绝缘膜的厚度分布。

公开(公告)号：US20160281234A1

公开(公告)日：2016-09-29

申请号：US15176684

申请日：2016-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  GENITECH, INC.

Inventor： Seok-jun WON ,  Yong-min YOO ,  Dae-youn KIM ,  Young-hoon KIM ,  Dae-jin KWON ,  Weon-hong KIM

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/40 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

公开(公告)号：US20160194756A1

公开(公告)日：2016-07-07

申请号：US14972598

申请日：2015-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek LIM ,  Jeonghoon NAM ,  Chul PARK ,  Youngchae SEO ,  Jaihyung WON ,  Seungmoo LEE ,  Donghoon HAN

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45512 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591

Abstract: A semiconductor processing apparatus includes a susceptor supporting a processing target, a gas box spaced apart from the susceptor, the gas box including a concave region facing an upper surface of the processing target, and an inclined surface at an outer side of the concave region, an inclination angle of the inclined surface of the gas box relative to an upper surface of the susceptor is more than 10° and less than 35°, and a shower head within the concave region of the gas box.

Abstract translation: 一种半导体处理装置，包括支撑处理对象的基座，与基座间隔开的气箱，包括面对加工对象的上表面的凹部的气体盒和凹部的外侧的倾斜面， 气箱的倾斜面相对于基座的上表面的倾斜角度大于10°且小于35°，以及在气箱的凹入区域内的喷头。

公开(公告)号：US20160168687A1

公开(公告)日：2016-06-16

申请号：US14620991

申请日：2015-02-12

Applicant: APPLIED MATERIALS, INC.

Inventor： JOTHILINGAM RAMALINGAM ,  JIANXIN LEI

IPC: C23C14/22 ,  C23C4/12 ,  C23C14/35 ,  C23C14/50

CPC classification number: C23C14/564 ,  C23C4/131 ,  C23C16/45574 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32853 ,  H01J37/34

Abstract: Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a method of reducing particles generated by a process of depositing a refractory metal on a substrate in a process chamber includes: forming a coating atop an inner surface of the process chamber prior to carrying out the process, wherein the coating has a thermal expansion coefficient that is within 20% of a thermal expansion coefficient of the refractory metal deposited during the process. In some embodiments, a process chamber configured for depositing a refractory metal on a substrate includes: a coating disposed atop an inner surface of the process chamber and having a thermal expansion coefficient that is within 20% of a thermal expansion coefficient of the refractory metal.

Abstract translation: 本文提供了用于还原在处理室中进行的工艺中产生的颗粒的方法和装置。 在一些实施方案中，一种通过在处理室中的基底上沉积难熔金属的方法产生的颗粒的方法包括：在进行该工艺之前，在处理室的内表面的顶部上形成涂层，其中涂层具有 热膨胀系数在该过程中沉积的难熔金属的热膨胀系数的20％以内。 在一些实施例中，被配置用于将难熔金属沉积在基底上的处理室包括：设置在处理室的内表面顶部并具有在难熔金属的热膨胀系数的20％以内的热膨胀系数的涂层。

公开(公告)号：US09362091B2

公开(公告)日：2016-06-07

申请号：US14463166

申请日：2014-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Suho Lee ,  Chang-Yun Lee ,  Ik Soo Kim ,  Juhyun Lee ,  Jongwon Hong

IPC: H01L21/306 ,  C23F1/00 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32807

Abstract: A substrate treating apparatus includes a chamber that encloses an internal space; a susceptor in a lower part of the internal space; a shower head in an upper part of the internal space and spaced above the susceptor and that includes a plurality of distribution holes; and a blocker plate assembly that comprises a body having a plurality of intake holes that divides a space between a top wall of the chamber and the shower head into an upper intake space and a lower distribution space, a ring-shaped partition rib on an upper surface of the body, and a ring-shaped distribution unit on a lower surface of the body.

Abstract translation: 基板处理装置包括封闭内部空间的室; 在内部空间的下部的基座; 位于所述内部空间的上部并且在所述基座上方间隔并包括多个分配孔的淋浴喷头; 以及阻挡板组件，其包括具有多个进气孔的主体，所述多个进气孔将所述腔室的顶壁和所述喷淋头之间的空间分成上进气空间和下分配空间，上部的环形分隔肋 身体的表面，以及在身体的下表面上的环形分配单元。

公开(公告)号：US20160138190A1

公开(公告)日：2016-05-19

申请号：US14899273

申请日：2014-06-19

Applicant: DENSO CORPORATION ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY ,  NUFLARE TECHNOLOGY, INC. ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Hiroaki FUJIBAYASHI ,  Masami NAITO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Hideki ITO ,  Ayumu ADACHI ,  Koichi NISHIKAWA

IPC: C30B25/14 ,  C30B29/36 ,  C23C16/458 ,  C30B25/16 ,  H01L21/02 ,  C23C16/455

CPC classification number: C30B25/14 ,  C23C16/325 ,  C23C16/45519 ,  C23C16/45548 ,  C23C16/45553 ,  C23C16/45574 ,  C23C16/45587 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262

Abstract: In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

Abstract translation: 在碳化硅半导体膜形成装置中，第一至第三气体分别通过第一至第三入口引入第一至第三分离室。 第一和第二气体是包括气体和碳原料的硅原料，包括气体，第三气体不包括硅和碳。 第一和第二气体分别通过从第一和第二分离室延伸的第一和第二供应路径独立地供应到生长空间。 第三气体通过第三供给路径从第一和第二气体之间的第三分离室引入。

公开(公告)号：US09328419B2

公开(公告)日：2016-05-03

申请号：US13450341

申请日：2012-04-18

Applicant: Jui-Sheng Cheng ,  Tsung-Hsun Han

Inventor： Jui-Sheng Cheng ,  Tsung-Hsun Han

IPC: C23C16/455 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/45574 ,  H01L21/67109

Abstract: The invention provides a gas treatment apparatus comprising an exterior circular gas spray portion including an exterior circular gas channel, and at least two regions and a cover. Each region has an upper gas spray portion and a lower gas spray portion. The upper gas spray portion has a plurality of first gas channels and a plurality of first heat exchange fluid conduits, each the first gas channel is arranged interlaced with each the first heat exchange fluid conduit. The lower gas spray portion comprises a plurality of second gas channels and a plurality of second heat exchange fluid conduits, each the second gas channel is arranged interlaced with each the second heat exchange fluid conduit, and each the second gas channel surrounds each the first gas channel. The combinations of the first gas channels and the second gas channels in adjacent regions respectively are arranged at an angle.

Abstract translation: 本发明提供一种气体处理装置，其包括外部圆形气体喷射部分，其包括外部圆形气体通道，以及至少两个区域和盖子。 每个区域具有上部气体喷射部分和下部气体喷射部分。 上部气体喷射部分具有多个第一气体通道和多个第一热交换流体管道，每个第一气体通道布置成与每个第一热交换流体管道交错。 下部气体喷射部分包括多个第二气体通道和多个第二热交换流体管道，每个第二气体通道与每个第二热交换流体管道交错布置，并且每个第二气体通道围绕每个第一气体 渠道。 第一气体通道和相邻区域中的第二气体通道的组合分别以一定角度排列。