公开(公告)号：US20180174843A1

公开(公告)日：2018-06-21

申请号：US15381593

申请日：2016-12-16

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Kevin Anglin ,  Tristan Ma ,  Morgan D. Evans ,  John Hautala ,  Heyun Yin

IPC: H01L21/263 ,  H01L21/66 ,  H01J37/32

CPC classification number: H01L21/2633 ,  H01J37/32009 ,  H01J37/32935 ,  H01J2237/334 ,  H01L22/12

Abstract: A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the processing parameters of the sputtering process are tuned to achieve a desired etch rate selectivity. The method includes determining the etch rate of each material disposed on the workpiece as a function of various processing parameters, such as ion species, ion energy, incidence angle and temperature. Once the relationship between etch rate and these parameters is determined for each material, a set of values for these processing parameters may be chosen to achieve the desired etch rate selectivity.

公开(公告)号：US20180174805A1

公开(公告)日：2018-06-21

申请号：US15896715

申请日：2018-02-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/31116

Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

公开(公告)号：US20180163302A1

公开(公告)日：2018-06-14

申请号：US15809767

申请日：2017-11-10

Applicant: Lam Research Corporation

Inventor： Sunil Kapoor ,  Karl F. Leeser ,  Adrien LaVoie ,  Yaswanth Rangineni

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32889 ,  H01J37/32899 ,  H01J37/32935 ,  H01J2237/3321 ,  H01L21/0262

Abstract: Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.

公开(公告)号：US20180158652A1

公开(公告)日：2018-06-07

申请号：US15832312

申请日：2017-12-05

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA

IPC: H01J37/32

CPC classification number: H01L21/3065 ,  G01J3/443 ,  G01N21/68 ,  G01N21/73 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A method and a system for monitoring a plasma chamber are provided. The method includes receiving process chamber characteristics from the plasma chamber; determining whether one or more variables associated with the process chamber characteristics are within predetermined specification. The method further includes updating a status of the plasma chamber to failure when the chamber characteristics are not within the predetermined specification. The method generates a warning notification when the chamber characteristics are within predetermined specification and when an operation status of the plasma chamber received from a fault detection system indicates a failure.

公开(公告)号：US09984906B2

公开(公告)日：2018-05-29

申请号：US14396606

申请日：2013-05-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Yugo Tomita

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32522 ,  H01J37/32743 ,  H01J37/32917 ,  H01J37/32935 ,  H01L21/3065 ,  H01L21/67248

Abstract: A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage.

公开(公告)号：US09933307B2

公开(公告)日：2018-04-03

申请号：US14880638

申请日：2015-10-12

Applicant: Orthobond, Inc.

Inventor： Jordan Katz ,  Abe Belkind ,  Randy Clevenger

IPC: G01J3/30 ,  G01J3/443 ,  G01N21/73 ,  G01N21/84

CPC classification number: G01J3/443 ,  G01N21/73 ,  G01N21/8422 ,  H01J37/32935 ,  H01J37/32972

Abstract: Disclosed herein are embodiments of a novel method and system to analyze films using plasma to produce spectral data and analyzing the spectral data.

公开(公告)号：US20180082826A1

公开(公告)日：2018-03-22

申请号：US15268472

申请日：2016-09-16

Applicant: Lam Research Corporation

Inventor： Joydeep Guha ,  John Daugherty ,  Vahid Vahedi ,  Richard Alan Gottscho

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  B81C2201/0138 ,  H01J37/32082 ,  H01J37/32926 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253

Abstract: Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector. The method further includes transforming the compensation vector into adjustments to the settings for the tuning knobs and then applying the adjustment to the tuning knobs of the plasma reactor.

公开(公告)号：US20180059168A1

公开(公告)日：2018-03-01

申请号：US15399060

申请日：2017-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Sung Jung ,  Sang-Yoon Soh ,  Jung-Hwan Um

IPC: G01R31/28 ,  G01N25/72 ,  H01J37/32 ,  H01L21/67

CPC classification number: G01R31/282 ,  G01N25/72 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67248 ,  H01L21/67259 ,  H01L21/67288 ,  H01L21/68742

Abstract: A method of diagnosing an abnormal state of a substrate-processing apparatus includes measuring a temperature of a chuck in the substrate-processing apparatus. The temperature of the chuck is compared to a target temperature of the chuck, with a temperature-controlling unit. A control signal is analyzed to diagnose an abnormal state of the substrate-processing apparatus. The control signal is transmitted from the temperature-controlling unit to a drive parameter-applying unit configured to provide the chuck with a drive parameter.

公开(公告)号：US20180052104A1

公开(公告)日：2018-02-22

申请号：US15243282

申请日：2016-08-22

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE

IPC: G01N21/64 ,  H01J37/32

CPC classification number: G01N21/64 ,  G01N3/56 ,  G01N2201/06113 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/24592 ,  H01J2237/334

Abstract: The present invention generally relates method and part wear indicator for identifying an eroded chamber component in an etching or other plasma processing chamber. In one embodiment, a chamber component has a part wear indicator. The chamber component has a body. The body has a top surface and a bottom surface. A part wear indicator material is disposed in the chamber component body. The part wear indicator has a body. The body of the part wear indicator has a transparent first layer. A second layer has a tracer material disposed therein and wherein the first layer is closer to the top surface of the top surface than the second layer.

公开(公告)号：US09875883B2

公开(公告)日：2018-01-23

申请号：US15660354

申请日：2017-07-26

Applicant: Lam Research Corporation

Inventor： Yukinori Sakiyama ,  Yaswanth Rangineni ,  Jeremy Tucker ,  Douglas Keil ,  Edward Augustyniak ,  Sunil Kapoor

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/509 ,  H01L21/67 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01J37/32935 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32183 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67253

Abstract: A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity. The characteristics of the RF current measured by the coil sensor are used to confirm presence of plasma within the wafer cavity.