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183 条记录 (耗时 0.014 秒)

    Semiconductor laser element
    61.
    发明授权
    Semiconductor laser element 失效
    半导体激光元件

    公开(公告)号：US5355384A

    公开(公告)日：1994-10-11

    申请号：US128579

    申请日：1993-09-29

    申请人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

    发明人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

    IPC分类号： H01S5/00 ,  H01S3/11 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/227 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2081 ,  H01S5/223 ,  H01S5/2275

    摘要： Disclosed herein is a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, a refractive index of the optical guiding layer being larger than both refractive indexes of the first and second cladding layers, and a refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer, and a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers being disposed on side faces other than laser-emitting faces of the optical guiding layer and the active layer.

    摘要翻译： 本发明公开了一种半导体激光器元件，其包括在半导体基板上以该顺序或相反次序设置的第一包层，光导层，有源层和第二包层，光导层的折射率大于 第一和第二包覆层的折射率以及光导层的折射率都小于有源层的折射率，但是比第一覆盖层的折射率大，但是比第一覆盖层的折射率小的折射率的掩埋层， 第一和第二包层中的至少一个设置在除了光导层和有源层的激光发射面以外的侧面上。

    Laser diode
    65.
    发明授权
    Laser diode 失效
    激光二极管

    公开(公告)号：US4701926A

    公开(公告)日：1987-10-20

    申请号：US837358

    申请日：1986-03-06

    申请人： Yoshito Seiwa ,  Saburo Takamiya

    发明人： Yoshito Seiwa ,  Saburo Takamiya

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/223 ,  H01S5/2232

    摘要： A laser diode in accordance with the present invention comprises: a substrate (11) of p-GaAs; a current constricting layer (12) of n-GaAs formed with a slit (13) over the substrate, wherein the slit is opened through the constricting layer and separates the constricting layer into two areas; a liner(s) (21) of p-GaAs formed on at least both the inner side walls of the slit; a lower clad layer (14) of p-Ga.sub.0.6 Al.sub.0.4 As formed over the constricting layer, burying the slit; an active layer (15) of p-Ga.sub.0.9 Al.sub.0.1 As which is formed over the lower clad layer and has a refractive index higher than that of the lower clad layer; and an upper clad layer of n-Ga.sub.0.6 Al.sub.0.4 As which is formed over the active layer and has a refractive index lower than that of the active layer.

    摘要翻译： 根据本发明的激光二极管包括：p-GaAs的衬底（11）; 在衬底上形成有狭缝（13）的n-GaAs电流收缩层（12），其中狭缝通过收缩层打开并将收缩层分成两个区域; 形成在狭缝的至少两个内侧壁上的p-GaAs的衬垫（21）; 在收缩层上形成的p-Ga0.6Al0.4As的下包层（14），掩埋该狭缝; 形成在下包层上的折射率高于下包层的折射率的p-Ga0.9Al0.1As的有源层（15） 以及在有源层上形成的折射率低于有源层的折射率的n-Ga0.6Al0.4As的上包层。

    Method for fabricating junction lasers having lateral current confinement
    66.
    发明授权
    Method for fabricating junction lasers having lateral current confinement 失效
    具有横向电流限制的结型激光器的制造方法

    公开(公告)号：US4194933A

    公开(公告)日：1980-03-25

    申请号：US39862

    申请日：1979-05-17

    申请人： Ralph A. Logan ,  Won-Tien Tsang

    发明人： Ralph A. Logan ,  Won-Tien Tsang

    IPC分类号： H01L21/208 ,  H01L21/306 ,  H01L33/04 ,  H01S5/22 ,  H01S5/223

    CPC分类号： H01S5/223 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/30612 ,  H01L33/04 ,  H01S5/2205 ,  H01S5/2231 ,  H01S5/2235

    摘要： Described is a method for fabricating a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is acheived by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaAs is then grown by LPE so that nucleation does not occur on the top of the mesa. Laterally spaced zones of p-AlGaAs are thus formed on either side of the mesa. An n-p-p or n-n-p DH is then grown so that the interface between the p-AlGaAs layers and the first n-layer of the DH forms a pair of laterally spaced p-n junctions separated by the mesa. When the light-emitting p-n junction in the DH active region is forward biased, the air of spaced junctions are reverse biased so that pumping current is constrained to flow through the active region in a narrow channel to the mesa. Further lateral current confinement is achieved by forming on the upper DH surface a second air of reverse biased p-n junctions separated by a window in alignment with the mesa.

    摘要翻译： 描述了一种用于制造条纹几何形状双异质结（DH）结激光器的方法，其中横向间隔的，反向偏置的p-n结对被横向电流限制所吸收。 例如，在n-GaAs衬底上形成台面，然后通过LPE生长p-AlGaAs层，使得在台面的顶部不发生成核。 因此，在台面的任一侧上形成间隔开的p-AlGaAs区域。 然后生长n-p-p或n-n-p DH，使得p-AlGaAs层和DH的第一n层之间的界面形成由台面分开的一对横向间隔开的p-n结。 当DH有源区域中的发光p-n结正向偏置时，间隔的结的空气被反向偏置，使得泵浦电流被限制在窄通道中的有源区域流到台面。 通过在上DH表面上形成由与台面对准的窗口隔开的反向偏置p-n结的第二空气来实现进一步的横向电流限制。

    BIDIRECTIONAL LONG CAVITY SEMICONDUCTOR LASER FOR IMPROVED POWER AND EFFICIENCY
    69.
    发明申请
    BIDIRECTIONAL LONG CAVITY SEMICONDUCTOR LASER FOR IMPROVED POWER AND EFFICIENCY 有权
    双向长孔半导体激光器，提高功率和效率

    公开(公告)号：US20150333472A1

    公开(公告)日：2015-11-19

    申请号：US14139290

    申请日：2013-12-23

    申请人： JDS Uniphase Corporation

    发明人： Abdullah Demir ,  Matthew Glenn Peters

    IPC分类号： H01S3/10 ,  H01S5/223 ,  H01S5/40 ,  H01S5/028 ,  H01S5/022

    CPC分类号： H01S3/10061 ,  H01S5/0071 ,  H01S5/02236 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/223 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4043 ,  H01S5/4056 ,  H01S5/4075

    摘要： The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.

    摘要翻译： 本发明涉及用于大功率应用的双向长腔半导体激光器，其具有两个AR涂层小面（2AR），以提供具有增强输出功率的未折叠空腔。 与传统的单向大功率激光器相比，激光器沿着腔体表现出更均匀的光子和载流子密度分布，由于减少纵向孔燃烧，能够实现更大的输出功率和激光效率的激光器。 进一步提供光源，其中设置在垂直偏移电平处的若干2AR激光器的两个面的辐射被组合成单个复合光束。