公开(公告)号：US10134460B2

公开(公告)日：2018-11-20

申请号：US15558630

申请日：2016-03-08

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Masahito Mochizuki

IPC: G11C11/00 ,  G11C11/16 ,  G11B5/02 ,  G11B5/65 ,  H01L43/08 ,  G11C11/18 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10

Abstract: A skyrmion generation method capable of reducing power consumption in generating skyrmions is provided. In the skyrmion generation method, an electric field is applied to an insulating magnetic body having a chiral crystal structure locally using an electric field generation unit while a magnetic field is applied from a magnetic field generation unit to the magnetic body. As a result, a skyrmion is generated in the magnetic body. The magnetic body preferably has a thin film shape with a thickness in a range of 2 to 300 nm at least partially, and the magnetic field generation unit preferably applies the magnetic field to a surface of the magnetic body substantially perpendicularly.

公开(公告)号：US10121120B2

公开(公告)日：2018-11-06

申请号：US14400171

申请日：2013-05-08

Applicant: Tokyo Institute of Technology ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hiroshi Deguchi

IPC: G06Q10/08 ,  G06Q50/06 ,  H04L12/28 ,  G06Q10/10 ,  G06Q10/06 ,  G06Q10/00 ,  H04L29/08

Abstract: An energy event recording apparatus is mounted on each of a plurality of equipment installed at a business facility. When a change in the amount of the flow or stock of energy is detected in the apparatus mounted, each of a plurality of the energy event recording apparatuses records journal information, which associates the amount of change to a debit side item and a credit side item, respectively, and notifies an energy management server of the journal information. The energy management server calculates pieces of journal information conveyed from a plurality of recording apparatuses, respectively, based on the debit side item and the credit side item.

公开(公告)号：US10118162B2

公开(公告)日：2018-11-06

申请号：US15121702

申请日：2015-02-12

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo Hosono ,  Michikazu Hara ,  Masaaki Kitano ,  Toshiharu Yokoyama ,  Yasunori Inoue ,  Shinji Kambara

IPC: C01C1/04 ,  B01J35/00 ,  B01J27/24 ,  B01J27/22 ,  B01J23/46 ,  B01J35/10 ,  C01B21/06 ,  B01J23/745 ,  B01J23/75

Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1≤x≤11, 1≤y≤8, and 0≤z≤4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C. These catalysts are used for continuously reacting nitrogen with hydrogen, which are raw materials, on the catalyst, wherein the reaction is performed in an ammonia synthesis reaction system under the preferable conditions of a reaction temperature which is equal to or higher than 100° C. and equal to or lower than 600° C., and a reaction pressure which is equal to or higher than 10 kPa and lower than 20 MPa.

公开(公告)号：US20180280974A1

公开(公告)日：2018-10-04

申请号：US15764529

申请日：2016-10-21

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka KAZOE ,  Yuriy PIHOSH ,  Takehiko KITAMORI

IPC: B01L3/00 ,  B82B1/00 ,  B82B3/00

Abstract: A nano-fluidic device includes: a first substrate that has a nanoscale groove on one surface; and a second substrate that is integrally provided with the first substrate by bonding one surface of the second substrate to the one surface of the first substrate and forms a nanochannel with the groove of the first substrate, in which either the first substrate or the second substrate includes at least a thin portion in a part of a position overlapping the nanochannel in plan view, and the thin portion is deformed by pressing to open and close the nanochannel.

公开(公告)号：US20180242912A1

公开(公告)日：2018-08-30

申请号：US15756410

申请日：2016-08-31

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Ichiro AMIMORI ,  Masao NAKAJIMA ,  Takao SOMEYA

IPC: A61B5/00 ,  A41D1/00 ,  A61B5/11 ,  H05K1/11 ,  H05K1/18 ,  H05K1/03

CPC classification number: A61B5/6804 ,  A41D1/005 ,  A61B5/0024 ,  A61B5/11 ,  A61B5/7267 ,  A61B2562/046 ,  A61B2562/164 ,  A61B2562/166 ,  A61B2562/222 ,  A61B2562/227 ,  H04Q9/00 ,  H05K1/038 ,  H05K1/118 ,  H05K1/189 ,  H05K2201/09227 ,  H05K2201/09418 ,  H05K2201/09445 ,  H05K2201/10151

Abstract: A connector substrate includes a base material, n first input terminals of m groups (m and n are an integer equal to or greater than 2) which are provided on the base material, n first output terminals which are provided on the base material, first wiring patterns which are disposed on or inside the base material and connect the first input terminals and the first output terminals, m second input terminals which are provided on the base material, m second output terminals which are provided on the base material, and second wiring patterns which are disposed on or inside the base material and connect the second input terminals and the second output terminals, in which a first end of each connector wiring constituting the first wiring pattern is connected to one of the n first input terminals constituting each group, and a second end is connected to one of the first output terminals.

公开(公告)号：US10032930B2

公开(公告)日：2018-07-24

申请号：US12504116

申请日：2009-07-16

Applicant: Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

Inventor： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC: H01L29/26 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/28 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

公开(公告)号：US09893236B2

公开(公告)日：2018-02-13

申请号：US14921734

申请日：2015-10-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael D. Craven ,  Steven P. DenBaars

IPC: H01L33/00 ,  H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/40 ,  C30B29/60 ,  H01L21/02 ,  H01L29/15 ,  H01L33/06 ,  H01L33/32 ,  H01L29/20

CPC classification number: H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

公开(公告)号：US09882118B2

公开(公告)日：2018-01-30

申请号：US15032679

申请日：2014-10-29

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  The University of York

Inventor： Atsufumi Hirohata

IPC: H01L43/08 ,  H01L43/02 ,  B81B5/00 ,  H01L23/367 ,  H02K49/06

CPC classification number: H01L43/02 ,  B81B5/00 ,  H01L23/3675 ,  H01L37/04 ,  H01L43/08 ,  H02K49/06

Abstract: A spin control mechanism includes a spin portion and a first channel portion. The spin portion has a magnetic moment that can be reversed and rotated. The first channel portion is provided in contact with the spin portion, and is configured from ferromagnetic insulator. Then, the spin control mechanism controls a direction of the magnetic moment of the spin portion using a spin current generated by a temperature gradient provided to the first channel portion.

公开(公告)号：US09825161B2

公开(公告)日：2017-11-21

申请号：US14773581

申请日：2014-03-09

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Tomofumi Susaki ,  Yasuhide Ohno ,  Kosuke Matsuzaki ,  Guillaume Hubert Frederic Hackenberger

IPC: H01L29/76 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/12 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7613 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/41725 ,  H01L29/4232 ,  H01L29/66439

Abstract: Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation element 30 is provided with an electrode 5A and the other electrode 5B that are provided to have a nanogap, a metal nanoparticle 7 arranged between the electrode 5A and the other electrode 5B in insulated state, and a plurality of gate electrodes 5C, 5D, 11, 11A, 11B for adjusting a charge of the metal nanoparticle 7. Electric current that flows between the electrode 5A and the other electrode 5B is controlled in accordance with the voltage applied to three or more of the gate electrodes 5C, 5D, 11, 11A, 11B.

公开(公告)号：US20170321263A1

公开(公告)日：2017-11-09

申请号：US15527560

申请日：2015-11-18

Applicant: Japan Science and Technology Agency

Inventor： Masayuki SU'ETSUGU ,  Hiroko KOBAYASHI

IPC: C12Q1/68 ,  C12P19/34 ,  C12N9/00 ,  C12N15/00

CPC classification number: C12Q1/6846 ,  C12N9/00 ,  C12N9/12 ,  C12N9/16 ,  C12N9/90 ,  C12N15/00 ,  C12N15/09 ,  C12P19/34 ,  C12Q1/6853 ,  C12Q1/686

Abstract: The present invention provides a method for easily and exponentially amplifying circular DNA, particularly long chain circular DNA, in a cell-free system. Specifically, the present invention provides a method for amplifying circular DNA in which circular DNA having a replication origin sequence (origin of chromosome (oriC)) is mixed with a reaction solution containing the following enzyme groups to form a reaction mixture, which is then reacted under an isothermal condition, the enzyme groups being:(1) a first enzyme group that catalyzes replication of circular DNA; (2) a second enzyme group that catalyzes an Okazaki fragment maturation and synthesizes two sister circular DNAs constituting a catenane; and (3) a third enzyme group that catalyzes a separation of two sister circular DNAs.