公开(公告)号：US20170236975A1

公开(公告)日：2017-08-17

申请号：US15502758

申请日：2015-08-07

Applicant: GLO AB

Inventor： Linda ROMANO ,  Ping WANG

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/42 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/18 ,  H01L33/32 ,  H01L33/42

Abstract: A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.

公开(公告)号：US09728670B2

公开(公告)日：2017-08-08

申请号：US14395631

申请日：2013-03-19

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Shaohua Huang ,  Jyh-Chiarng Wu

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/12 ,  H01L33/14

CPC classification number: H01L33/002 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/12 ,  H01L33/14

Abstract: Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer (231) located on the n-type graded buffer layer; an active layer (232) located on the n-type limiting layer (231); and a p-type limiting layer (233) located on the active layer (232). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.

公开(公告)号：US09722113B2

公开(公告)日：2017-08-01

申请号：US14807378

申请日：2015-07-23

Applicant: The Regents of the University of Michigan

Inventor： Vladimir A. Stoica ,  Lynn Endicott ,  Roy Clarke ,  Ctirad Uher

IPC: H01L31/032 ,  H01L31/18 ,  H01L33/00 ,  H01L33/12 ,  H01L31/0352 ,  H01L33/26 ,  H01L31/0725 ,  H01L21/66

CPC classification number: H01L31/0322 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02502 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02631 ,  H01L22/12 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/035272 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/18 ,  H01L31/1864 ,  H01L33/005 ,  H01L33/12 ,  H01L33/26 ,  Y02E10/541

Abstract: A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

公开(公告)号：US09711683B2

公开(公告)日：2017-07-18

申请号：US14498104

申请日：2014-09-26

Applicant: Epistar Corporation ,  HUGA OPTOTECH INC.

Inventor： Heng-Kuang Lin ,  Ya-Yu Yang

IPC: H01L33/12 ,  H01L21/02 ,  H01L29/20 ,  H01L33/32 ,  H01L21/265 ,  H01L29/812

CPC classification number: H01L33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/26506 ,  H01L29/2003 ,  H01L29/812 ,  H01L33/32

Abstract: The present application discloses a semiconductor device comprising a crystalline substrate having a first region and a second region, a nuclei structure on the first region, a first crystalline buffer layer on the nuclei structure, a void between the second region and the first crystalline buffer layer, a second crystalline buffer layer on the first crystalline buffer layer, an intermediate layer located between the first crystalline buffer layer and the second crystalline buffer layer, and a semiconductor device layer on the second crystalline buffer layer.

公开(公告)号：US20170186917A1

公开(公告)日：2017-06-29

申请号：US15373172

申请日：2015-06-10

Applicant: SEMICON LIGHT CO., LTD.

Inventor： Soo Kun JEON ,  Il Gyun CHOI ,  Geun Mo JIN

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/08 ,  H01L33/50 ,  H01L33/12 ,  H01L33/64 ,  H01L33/10

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/387 ,  H01L33/50 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 μm or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.

公开(公告)号：US20170179336A1

公开(公告)日：2017-06-22

申请号：US15449044

申请日：2017-03-03

Applicant: James R. Grandusky ,  Leo J. Schowalter ,  Muhammad Jamil ,  Mark C. Mendrick ,  Shawn R. Gibb

Inventor： James R. Grandusky ,  Leo J. Schowalter ,  Muhammad Jamil ,  Mark C. Mendrick ,  Shawn R. Gibb

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/60 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/325 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.

公开(公告)号：US09685586B2

公开(公告)日：2017-06-20

申请号：US14727786

申请日：2015-06-01

Applicant: Genesis Photonics Inc.

Inventor： Chi-Feng Huang ,  Ching-Liang Lin ,  Shen-Jie Wang ,  Jyun-De Wu ,  Yu-Chu Li ,  Chun-Chieh Lee

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36 ,  H01S5/343 ,  H01S5/323 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/02 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0

公开(公告)号：US09670592B2

公开(公告)日：2017-06-06

申请号：US15212287

申请日：2016-07-18

Applicant: PlayNitride Inc.

Inventor： Yen-Lin Lai ,  Jyun-De Wu

IPC: H01L31/072 ,  H01L33/00 ,  H01L31/109 ,  H01L21/00 ,  H01L21/28 ,  C30B25/18 ,  H01L33/12 ,  H01L33/58 ,  H01L33/32 ,  C23C14/34 ,  C30B23/00 ,  C30B29/40 ,  H01L21/02 ,  C30B23/08

CPC classification number: C30B25/183 ,  C23C14/34 ,  C30B23/00 ,  C30B23/08 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/58

Abstract: An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.

公开(公告)号：US20170155014A1

公开(公告)日：2017-06-01

申请号：US15361222

申请日：2016-11-25

Applicant: NICHIA CORPORATION

Inventor： Hiroyuki Inoue ,  Tomohiro Shimooka

IPC: H01L33/22 ,  H01L33/12 ,  C30B25/18 ,  H01L33/00 ,  C30B29/20 ,  C30B29/40 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: A light-emitting element includes a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon that includes first curved lines and second curved lines that are alternately connected to one another, the first curved lines being curved toward a center of a corresponding hexagon and disposed between respective adjacent pairs of six vertices of the hexagon, and the second curved lines passing through respective vertices of the hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.

公开(公告)号：US20170148947A1

公开(公告)日：2017-05-25

申请号：US15086862

申请日：2016-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA PHOTONICS TECHNOLOGY INSTITUTE

Inventor： Jaesoong LEE ,  Youngho SONG

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/12 ,  H01L33/32 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: Provided are a light emitting device having a nitride quantum dot and a method of manufacturing the same. The light emitting device may include: a substrate; a nitride-based buffer layer arranged on the substrate; a plurality of nanorod layers arranged on the nitride-based buffer layer in a vertical direction and spaced apart from each other; a nitride quantum dot arranged on each of the plurality of nanorod layers; and a top contact layer covering the plurality of nanorod layers and the nitride quantum dots. A pyramid-shaped material layer may be further included between each of the plurality of nanorod layers and each of the nitride quantum dots. One or the plurality of nitride quantum dots may be arranged on each of the nanorod layers.