公开(公告)号：US20050233529A1

公开(公告)日：2005-10-20

申请号：US11148721

申请日：2005-06-09

申请人： Christophe Pomarede ,  Michael Givens ,  Eric Shero ,  Michael Todd

发明人： Christophe Pomarede ,  Michael Givens ,  Eric Shero ,  Michael Todd

IPC分类号： C23C16/24 ,  C23C16/02 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L21/28194 ,  B82Y10/00 ,  C23C16/0272 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/4925 ,  H01L29/517 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes, aid in reducing hydrogen content for a given deposition rate.

摘要翻译： 本文提供了用于在高介电常数（“高k”）材料上形成电极层的方法。 在所示的实施例中，在接下来的含硅栅电极沉积期间，保护高k栅极电介质，例如氧化锆，以防止还原。 特别地，种子沉积阶段包括设计用于最小化栅极电介质的氢还原的条件，包括硅源气体的低氢含量，低温和/或低分压。 优选地，为了更高的沉积速率改变条件，并且在体相中继续沉积。 然而，尽管通过控制上述参数仍然使氢扩散最小化。 在一个实施例中，通过省略氢载体气体来最小化高k电介质的减小。 在另一个实施方案中，高级硅烷有助于降低给定沉积速率的氢含量。

公开(公告)号：US20050118837A1

公开(公告)日：2005-06-02

申请号：US10623482

申请日：2003-07-18

申请人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

发明人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/58 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

摘要： Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

摘要翻译： 在反应室中进行多个顺序的工艺以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体在衬底上沉积硅层。 然后通过氮化硅层形成氮化硅层。 通过重复这些步骤，形成期望厚度的氮化硅层。

公开(公告)号：US20080038936A1

公开(公告)日：2008-02-14

申请号：US11877480

申请日：2007-10-23

申请人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

发明人： Michael Todd ,  Keith Weeks ,  Christiaan Werkhoven ,  Christophe Pomarede

IPC分类号： H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

摘要： Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

摘要翻译： 在反应室中进行多个顺序的工艺以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体在衬底上沉积硅层。 然后通过氮化硅层形成氮化硅层。 通过重复这些步骤，形成期望厚度的氮化硅层。

公开(公告)号：US20060088985A1

公开(公告)日：2006-04-27

申请号：US11213449

申请日：2005-08-25

申请人： Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius van der Jeugd ,  Jacobus Beulens ,  Michael Todd ,  Keith Weeks ,  Christian Werkhoven ,  Christophe Pomarede

发明人： Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius van der Jeugd ,  Jacobus Beulens ,  Michael Todd ,  Keith Weeks ,  Christian Werkhoven ,  Christophe Pomarede

IPC分类号： H01L21/20

CPC分类号： H01L21/0217 ,  C23C16/24 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3144 ,  H01L21/3185

摘要： Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.

摘要翻译： 在间歇反应室中进行连续工艺，以在低温下形成超高质量的含硅化合物层，例如氮化硅层。 在反应速率有限的条件下，使用丙硅烷作为硅前体在基板上沉积硅层。 三氯甲烷流动中断。 然后通过用氮自由基氮化硅层来形成氮化硅层，例如通过在丙硅烷步骤之后脉冲等离子体功率（远程或原位）而形成。 停止氮气供应。 任选地，还可以连续或间歇地提供非活化氨。 如果需要，重复该过程以获得更大的厚度，在每个丙硅烷和硅化合步骤之后清洗反应器以避免气相反应，每个循环产生约5-7埃的氮化硅。

公开(公告)号：US08699875B2

公开(公告)日：2014-04-15

申请号：US13810957

申请日：2011-07-19

申请人： Emilio Bravi ,  Giuseppe Tali ,  David McDonald ,  Michael Todd ,  David Bernard

发明人： Emilio Bravi ,  Giuseppe Tali ,  David McDonald ,  Michael Todd ,  David Bernard

IPC分类号： G01N21/41 ,  H04B10/07 ,  H04B17/00 ,  G01N21/84

CPC分类号： H04B10/07951 ,  G01M11/332 ,  G01M11/335 ,  G01M11/338 ,  H04B10/073

摘要： The invention relates to a system and method of dispersion measurement in an optical fiber network. The invention provides means for transmitting from a transmitting node, using a single tunable laser transmitter, two consecutive bursts of data at different wavelengths λ1 and λ2 to a receiver node, wherein each burst of data comprises a unique sequence of amplitude modulated data, and wherein the two sequences are injected with a fixed known delay. The delay between the two consecutive bursts of data is maintained by selective switching of the tunable laser, such that clock recovery circuitry at the receiver node remains locked during the delay between the two bursts. The dispersion measurements method of the present invention is based on walk off and bit position detection between two wavelengths suitable for fast optical burst switching network is described. This method does not require an operator, extra equipment, or traffic interruption on the network.

摘要翻译： 本发明涉及光纤网络中色散测量的系统和方法。 本发明提供了用于使用单个可调谐激光发射器从不同波长λ1和λ2的两个连续的数据突发传送到接收机节点的装置，其中每个数据突发包括幅度调制数据的唯一序列，并且其中 两个序列以固定的已知延迟注入。 通过可调谐激光器的选择性切换来维持两个连续的数据脉冲之间的延迟，使得接收器节点处的时钟恢复电路在两个脉冲串之间的延迟期间保持锁定。 本发明的色散测量方法是基于步行和适用于快速光突发交换网络的两个波长之间的位位置检测进行描述的。 该方法不需要网络上的操作员，额外的设备或流量中断。

公开(公告)号：US08130641B2

公开(公告)日：2012-03-06

申请号：US12403466

申请日：2009-03-13

申请人： Patrick Choy Ming Wong ,  Scott Robert Koster ,  Michael Todd

发明人： Patrick Choy Ming Wong ,  Scott Robert Koster ,  Michael Todd

IPC分类号： H04L12/26

CPC分类号： H04L41/00

摘要： Methods, systems and computer readable mediums storing computer executable programs for managing network traffic within a virtual network system. A virtual network system defined within a physical network device is identified. A first virtual network device defined within the virtual network system is identified. A virtual network appliance within the physical network device is defined. The virtual network appliance is communicatively coupled to the first virtual network device. The virtual network appliance is communicatively coupled to the virtual network system. The virtual network appliance is operable to manage network traffic associated with the first virtual network device.

摘要翻译： 存储用于管理虚拟网络系统内的网络流量的计算机可执行程序的方法，系统和计算机可读介质。 识别在物理网络设备内定义的虚拟网络系统。 识别在虚拟网络系统内定义的第一虚拟网络设备。 定义物理网络设备内的虚拟网络设备。 虚拟网络设备通信地耦合到第一虚拟网络设备。 虚拟网络设备通信地耦合到虚拟网络系统。 虚拟网络设备可操作以管理与第一虚拟网络设备相关联的网络流量。

公开(公告)号：US20080014725A1

公开(公告)日：2008-01-17

申请号：US11843552

申请日：2007-08-22

申请人： Michael Todd

发明人： Michael Todd

IPC分类号： H01L21/20

CPC分类号： C23C16/0272 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/22 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/56 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2257 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3185 ,  H01L21/32055 ,  H01L28/84 ,  H01L29/127 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181 ,  H01L29/66242 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/933

摘要： Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.

摘要翻译： 三氯硅烷用于化学气相沉积方法以在混合的基底上沉积含硅膜。 这种方法在半导体制造中可用于提供各种优点，包括在异质表面上的均匀沉积，高沉积速率和更高的制造生产率。 例如，形成异质结双极晶体管的基极区域，包括在单晶半导体表面和非晶绝缘区域上的同时沉积。

公开(公告)号：US20070102790A1

公开(公告)日：2007-05-10

申请号：US11642167

申请日：2006-12-20

申请人： Michael Todd

发明人： Michael Todd

IPC分类号： H01L31/117 ,  H01L31/00 ,  H01L29/739

CPC分类号： C23C16/0272 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/22 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/56 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2257 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3185 ,  H01L21/32055 ,  H01L28/84 ,  H01L29/127 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181 ,  H01L29/66242 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/933

摘要： Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

公开(公告)号：US20070032676A1

公开(公告)日：2007-02-08

申请号：US11581657

申请日：2006-10-16

申请人： Michael Todd

发明人： Michael Todd

IPC分类号： C07F7/04

CPC分类号： C23C16/30 ,  C07F7/0896 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/31629 ,  H01L21/31633 ,  Y10T428/24942 ,  Y10T428/24975

摘要： Chemical vapor deposition processes result in films having low dielectric constants when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)fluorosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalkyl)fluorosilanes, alkylsiloxysilanes, alkoxysilanes, alkylalkoxysilanes, silylmethanes, alkoxysilylmethanes, alkylalkoxysilylmethanes, alkoxymethanes, alkylalkoxymethanes, and mixtures thereof. The precursors are particularly suited to thermal CVD for producing low dielectric constant films at relatively low temperatures, particularly without the use of additional oxidizing agents. Such films are useful in the microelectronics industry.

摘要翻译： 当使用合适的化学前体时，化学气相沉积工艺导致具有低介电常数的膜。 优选的化学前体包括硅氧烷，（氟烷基）氟硅氧烷，（氟烷基）硅烷，（烷基）氟硅烷，（氟代烷基）氟硅烷，烷基硅氧烷，烷氧基硅烷，烷基烷氧基硅烷，甲硅烷基甲烷，烷氧基甲硅烷基甲烷，烷基烷氧基甲硅烷基甲烷，烷氧基甲烷，烷基烷氧基甲烷及其混合物。 前体特别适用于在较低温度下制备低介电常数膜的热CVD，特别是不使用另外的氧化剂。 这种膜在微电子工业中是有用的。

公开(公告)号：US20060216417A1

公开(公告)日：2006-09-28

申请号：US11373408

申请日：2006-03-09

申请人： Michael Todd ,  Keith Weeks ,  Paul Jacobson

发明人： Michael Todd ,  Keith Weeks ,  Paul Jacobson

IPC分类号： C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/45574 ,  C23C16/52

摘要： A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps.

摘要翻译： 基板处理系统具有计算机控制的喷射器。 计算机被配置为调整多个喷射器，例如在沉积层析层期间，在两个不同层的沉积之间，或在沉积和室清洁步骤之间。