公开(公告)号：US06548386B1

公开(公告)日：2003-04-15

申请号：US09570038

申请日：2000-05-12

申请人： Ichiharu Kondo ,  Yasuo Ishihara ,  Shuichi Nagahaka ,  Takeshi Miyajima

发明人： Ichiharu Kondo ,  Yasuo Ishihara ,  Shuichi Nagahaka ,  Takeshi Miyajima

IPC分类号： H01L2128

CPC分类号： H01L21/7685 ,  H01L21/76885 ,  H01L23/485 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2924/00014

摘要： Metallic films are formed on a silicon substrate on which an insulation film and a conductive portion are exposed. The metallic films include a first metallic film directly contacting the insulation film and the conductive portion and a second metallic film disposed on the first metallic film as a stress adjustment film to control a stress at an interface between the first metallic film and the underlying member. Accordingly, an adhesion between the first metallic film and the insulation film can be controlled to be smaller than that between the first metallic film and the conductive portion. Then, the metallic film is removed from the insulation film by an adhesive sheet selectively while remaining on the conductive portion. As a result, the metallic film can be patterned stably and readily at low cost.

摘要翻译： 金属膜形成在其上露出绝缘膜和导电部分的硅基板上。 金属膜包括直接接触绝缘膜和导电部分的第一金属膜和设置在第一金属膜上的第二金属膜作为应力调节膜，以控制第一金属膜和下层构件之间的界面处的应力。 因此，可以将第一金属膜和绝缘膜之间的粘合力控制为小于第一金属膜和导电部分之间的粘合力。 然后，通过粘合片选择性地将金属膜从绝缘膜上除去，同时保留在导电部分上。 结果，可以以低成本稳定且容易地构图金属膜。

公开(公告)号：US07242065B2

公开(公告)日：2007-07-10

申请号：US11081525

申请日：2005-03-17

申请人： Ichiharu Kondo ,  Hiroaki Tanaka ,  Inao Toyoda ,  Makoto Totani

发明人： Ichiharu Kondo ,  Hiroaki Tanaka ,  Inao Toyoda ,  Makoto Totani

IPC分类号： H01L29/84 ,  G01L9/00

CPC分类号： G01L9/0054 ,  G01L19/148

摘要： A pressure sensor includes a sensor chip and a circuit chip. The sensor chip, which is configured to generate an electrical signal representative of a pressure being sensed, has a surface including a sensing area and a plurality of electrical contact pads disposed on the surface. The circuit chip includes a circuit configured to process the electrical signal and has a surface on which a plurality of electrical contact pads of the circuit chip are disposed. The circuit chip is joined to the sensor chip so that the electrical contact pads of the circuit chip are respectively electrically connected to those of the sensor chip, all the electrical contact pads of the circuit chip and the sensor chip are hermetically sealed and isolated from the fluid, and the surfaces of the circuit chip and the sensor chip face each other with the electrical contact pads of the same interposed therebetween.

摘要翻译： 压力传感器包括传感器芯片和电路芯片。 被配置为产生代表被感测的压力的电信号的传感器芯片具有包括感测区域和设置在表面上的多个电接触焊盘的表面。 电路芯片包括被配置为处理电信号并且具有设置电路芯片的多个电接触焊盘的表面的电路。 电路芯片连接到传感器芯片，使得电路芯片的电接触焊盘分别电连接到传感器芯片的电接触焊盘，电路芯片和传感器芯片的所有电接触焊盘都被密封和隔离 流体，并且电路芯片和传感器芯片的表面彼此面对，并且其间具有相同的电接触焊盘。

公开(公告)号：US07176541B2

公开(公告)日：2007-02-13

申请号：US11137404

申请日：2005-05-26

申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Ichiharu Kondo ,  Makoto Totani

发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Ichiharu Kondo ,  Makoto Totani

IPC分类号： H01L29/84

CPC分类号： G01L19/147 ,  G01L9/0054

摘要： A pressure sensor chip includes a diaphragm and pads. A flexible printed circuit board (FPC) includes a resin sheet having a through-hole and wiring patterns that are formed within the resin sheet and sealed. The resin sheet is press-fitted to the pressure sensor chip such that the diaphragm is bared at the through-hole. The wiring patterns are connected to the pads, and junctions between the wiring patterns and the pads are sealed with the resin sheet.

摘要翻译： 压力传感器芯片包括隔膜和垫片。 柔性印刷电路板（FPC）包括具有通孔的树脂片和形成在树脂片内并被密封的布线图案。 树脂片被压配合到压力传感器芯片，使得隔膜在通孔处露出。 布线图案连接到焊盘，并且布线图案和焊盘之间的接合部用树脂片密封。

公开(公告)号：US5635764A

公开(公告)日：1997-06-03

申请号：US284684

申请日：1994-08-09

申请人： Hisayoshi Fujikawa ,  Takeshi Ohwaki ,  Yasunori Taga ,  Osamu Takenaka ,  Kenji Kondo ,  Takao Yoneyama ,  Ichiharu Kondo

发明人： Hisayoshi Fujikawa ,  Takeshi Ohwaki ,  Yasunori Taga ,  Osamu Takenaka ,  Kenji Kondo ,  Takao Yoneyama ,  Ichiharu Kondo

IPC分类号： H01L21/60 ,  H01L23/482 ,  H01L23/492 ,  H01L23/495 ,  H01L23/48

CPC分类号： H01L24/32 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/15151 ,  H01L2924/181

摘要： On a rear surface of a semiconductor (10), a contact layer (11), a diffusion preventing layer (12) and a solder joint layer (13) are formed, and this solder joint layer (13) is connected to a mount base (15) by a Pb-Sn solder layer (14). The contact layer (11) is formed of a rare earth metal, its silicide or a composite thereof, the diffusion preventing layer (12) is formed of a ferrous metal, and the solder joint layer (13) is formed of a Ni-Au alloy. By forming the diffusion preventing layer (12) using the ferrous metal, a diffusion of tin in a solder is prevented and by the solder joint layer (13) of the Ni-Au alloy, an excellent solder joint property can be maintained to reduce the number of laminated layers. Further, as a surface treated layer of at least one joint member, the Ni-Au alloy is used and by heating the semiconductor substrate via a solder foil in a reducing atmosphere a high airtightness is obtained.

摘要翻译： PCT No.PCT / JP93 / 01788 Sec。 371日期1994年8月9日 102（e）日期1994年8月9日PCT提交1993年12月9日PCT公布。 出版物WO94 / 14190 日期：1994年6月23日在半导体（10）的背面形成有接触层（11），扩散防止层（12）和焊料接合层（13），该焊点层 通过Pb-Sn焊料层（14）连接到安装基座（15）。 接触层（11）由稀土金属，其硅化物或其复合体形成，扩散防止层（12）由黑色金属形成，焊料层（13）由Ni-Au 合金。 通过使用黑色金属形成扩散防止层（12），防止锡在焊料中的扩散，并且通过Ni-Au合金的焊点（13），可以保持良好的焊接性能，以减少 叠层数。 此外，作为至少一个接合构件的表面处理层，使用Ni-Au合金，并且通过在还原气氛中通过焊料箔加热半导体衬底，获得高气密性。

公开(公告)号：US5656858A

公开(公告)日：1997-08-12

申请号：US544637

申请日：1995-10-18

申请人： Ichiharu Kondo ,  Chikage Noritake ,  Yusuke Watanabe

发明人： Ichiharu Kondo ,  Chikage Noritake ,  Yusuke Watanabe

IPC分类号： H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14

摘要： A semiconductor device, which has a high adhesiveness to the Cu film and the barrier metal at the bump part or LSI wiring part of a flip chip, is disclosed. On a silicon substrate are formed a transistor as a functional element and a bump for making contact with the transistor and an external substrate. On the surface of the silicon substrate is formed a metallic film, and on the metallic film is formed an insulating film, and a part of the metallic film is exposed through a contact hole. On the metallic film within the contact hole is formed a barrier metal made of TiN, and on the barrier metal is formed a bonding layer made of Ti. On the bonding layer is formed a bump growing Cu film, and on the bump growing Cu film is formed a bump structure.

摘要翻译： 公开了一种半导体器件，其对Cu膜和在倒装芯片的凸起部分或LSI布线部分处的阻挡金属具有高粘合性。 在硅衬底上形成作为功能元件的晶体管和与晶体管和外部衬底接触的凸块。 在硅衬底的表面上形成金属膜，并且在金属膜上形成绝缘膜，并且金属膜的一部分通过接触孔露出。 在接触孔内的金属膜上形成由TiN制成的阻挡金属，在阻挡金属上形成由Ti构成的接合层。 在接合层上形成凸起生长的Cu膜，并且在凸起生长的Cu膜上形成凸起结构。

公开(公告)号：US07168326B2

公开(公告)日：2007-01-30

申请号：US11079475

申请日：2005-03-15

申请人： Inao Toyoda ,  Hiroaki Tanaka ,  Ichiharu Kondo ,  Makoto Totani

发明人： Inao Toyoda ,  Hiroaki Tanaka ,  Ichiharu Kondo ,  Makoto Totani

IPC分类号： F02P5/00

CPC分类号： B60C23/0408 ,  G01L9/0055 ,  G01L19/0069 ,  G01L19/0627 ,  G01L19/147 ,  G01L23/24

摘要： A pressure sensor mainly includes a sensor chip, a circuit chip, and a substrate. The sensor chip is configured to generate an electrical signal representative of a pressure being sensed and includes a sensing area and a plurality of contact pads. The circuit chip includes a circuit configured to process the electrical signal and a plurality of contact pads. The substrate includes a resin sheet having an opening and a plurality of conductors within the resin sheet. The substrate is joined to both the sensor chip and circuit chip so that the sensing area of the sensor chip is to be exposed to the pressure being sensed through the opening of the resin sheet, the contact pads of the sensor chip and circuit chip are electrically connected to the conductors of the substrate, and all the contact pads and conductors are hermetically embedded in the resin sheet of the substrate.

摘要翻译： 压力传感器主要包括传感器芯片，电路芯片和基板。 传感器芯片被配置为产生代表正在感测的压力的电信号，并且包括感测区域和多个接触焊盘。 电路芯片包括被配置为处理电信号的电路和多个接触焊盘。 基板包括在树脂片内具有开口和多个导体的树脂片。 基片连接到传感器芯片和电路芯片上，以使传感器芯片的感测区域暴露于通过树脂片的开口感测的压力，传感器芯片和电路芯片的接触垫电气 连接到基板的导体，并且所有接触焊盘和导体都气密地嵌入在基板的树脂片中。

公开(公告)号：US07030496B2

公开(公告)日：2006-04-18

申请号：US10878435

申请日：2004-06-29

申请人： Keiji Shinyama ,  Shoji Miura ,  Ichiharu Kondo

发明人： Keiji Shinyama ,  Shoji Miura ,  Ichiharu Kondo

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05556 ,  H01L2224/05644 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.

摘要翻译： 半导体器件包括半导体衬底; 设置在所述基板上的铝电极; 设置在铝电极上的保护膜; 设置在所述保护膜上以露出所述铝电极的开口; 以及通过所述开口设置在所述铝电极的表面上的金属电极。 铝电极包括设置在开口下方的凹部。 设置在凹部处的铝电极的厚度等于或大于凹部的深度。 铝电极的表面包括多个凹部和多个凸部。

公开(公告)号：US20050269654A1

公开(公告)日：2005-12-08

申请号：US11137404

申请日：2005-05-26

申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Ichiharu Kondo ,  Makoto Totani

发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Ichiharu Kondo ,  Makoto Totani

IPC分类号： G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L19/06 ,  H01L29/84

CPC分类号： G01L19/147 ,  G01L9/0054

摘要： A pressure sensor chip includes a diaphragm and pads. A flexible printed circuit board (FPC) includes a resin sheet having a through-hole and wiring patterns that are formed within the resin sheet and sealed. The resin sheet is press-fitted to the pressure sensor chip such that the diaphragm is bared at the through-hole. The wiring patterns are connected to the pads, and junctions between the wiring patterns and the pads are sealed with the resin sheet.

摘要翻译： 压力传感器芯片包括隔膜和垫片。 柔性印刷电路板（FPC）包括具有通孔的树脂片和形成在树脂片内并被密封的布线图案。 树脂片被压配合到压力传感器芯片，使得隔膜在通孔处露出。 布线图案连接到焊盘，并且布线图案和焊盘之间的接合部用树脂片密封。

公开(公告)号：US5876861A

公开(公告)日：1999-03-02

申请号：US650437

申请日：1996-05-20

申请人： Ichiharu Kondo ,  Takao Yoneyama ,  Masami Yamaoka ,  Osamu Takenaka

发明人： Ichiharu Kondo ,  Takao Yoneyama ,  Masami Yamaoka ,  Osamu Takenaka

IPC分类号： C30B28/12 ,  C23C14/02 ,  C23C14/14 ,  C23C14/16 ,  C23C14/18 ,  C23C14/34 ,  C30B29/02 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  B32B15/04

CPC分类号： C23C14/025 ,  C23C14/16 ,  C23C14/165 ,  C23C14/18 ,  H01L29/456 ,  Y10T428/12674 ,  Y10T428/12889 ,  Y10T428/12944 ,  Y10T428/26

摘要： Disclosed is a nickel layer formed on a substrate by sputtering, in which nickel layer a percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. This nickel layer has a reduced stress, and therefore, lessens a bending of a substrate. The nickel layer is formed by a process for sputtering nickel on a substrate, comprising supplying an argon gas into a vacuum chamber, adjusting a pressure of the argon gas in the vacuum chamber to a predetermined value, ionizing the argon gas, bombarding a target containing nickel with the ionized argon gas, to sputter nickel atoms, and depositing the sputtered nickel atoms onto the substrate, wherein the predetermined pressure of the argon gas is not lower than 12 mTorr.

摘要翻译： 公开了通过溅射在基板上形成的镍层，镍层的镍层的（200）面的X射线衍射峰强度与镍层的（111）面的X射线衍射峰强度的百分比为 不低于10％。 该镍层具有减小的应力，因此减小了基板的弯曲。 镍层通过在基板上溅射镍的方法形成，包括将氩气供应到真空室中，将真空室中的氩气压力调节至预定值，电离氩气，轰击含有 镍与电离氩气溅射镍原子，并将溅射的镍原子沉积到衬底上，其中氩气的预定压力不低于12mTorr。

公开(公告)号：US5614291A

公开(公告)日：1997-03-25

申请号：US463633

申请日：1995-06-06

申请人： Ichiharu Kondo ,  Yoshiaki Inaguma ,  Yoshitsugu Sakamoto

发明人： Ichiharu Kondo ,  Yoshiaki Inaguma ,  Yoshitsugu Sakamoto

IPC分类号： C23C14/06 ,  C23C14/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/52 ,  H01L23/482 ,  H01L23/492 ,  H01L29/43 ,  B32B9/00

CPC分类号： H01L24/32 ,  H01L23/4824 ,  H01L23/4924 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  Y10S428/901 ,  Y10T428/24917

摘要： A semiconductor device, including a nickel layer formed on a semiconductor substrate and a solder layer formed on the nickel layer, and a method of manufacturing such a device are disclosed. The percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. The nickel layer is sputtered in a condition which a pressure of an argon discharge gas is at least 15 mTorr. The solder layer includes at least tin and lead, and the amount of tin is not more than 30% by weight. The adhesive strength of the resultant semiconductor device is strong.

摘要翻译： 公开了一种包括形成在半导体衬底上的镍层和形成在镍层上的焊料层的半导体器件及其制造方法。 镍层（200）面与镍层（111）面的X射线衍射峰强度的百分比不小于10％。 在氩排出气体的压力至少为15mTorr的条件下，镍层溅射。 焊料层至少包含锡和铅，锡的含量不超过30重量％。 所得半导体器件的粘合强度很强。