Semiconductor device, and thin film capacitor
    2.
    发明授权
    Semiconductor device, and thin film capacitor 有权
    半导体器件和薄膜电容器

    公开(公告)号:US06524905B2

    公开(公告)日:2003-02-25

    申请号:US09903316

    申请日:2001-07-11

    IPC分类号: H01L218242

    摘要: A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate 1a, interlayer insulating films 3a, 3b, and 3c, wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor 14 formed on an uppermost insulating layer. The thin film capacitor 14 comprises a lower electrode 6 connected to the ground wire block 4e through a contact 5d, an upper electrode 8 which is connected to the power source wire block 4d through a contact 5d, and which extends above the lower electrode 6, and a dielectric layer 7 which is inserted between the lower and the upper electrodes.

    摘要翻译: 提供了具有小等效串联电感的薄膜电容器的半导体器件,其可以在高频范围下操作并且有助于电子器件的尺寸减小。 半导体器件包括形成在硅衬底1a,层间绝缘膜3a,3b和3c上的器件,包括电源线块和接地线块的布线块,以及形成在最上层绝缘层上的薄膜电容器14。 薄膜电容器14包括通过接触件5d连接到接地线块4e的下电极6,通过接触件5d连接到电源线块4d并且在下电极6上方延伸的上电极8, 以及插入在下电极和上电极之间的电介质层7。