利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

79 条记录 (耗时 0.036 秒)

    Semiconductor light emitting devices with high color rendering
    5.
    发明授权
    Semiconductor light emitting devices with high color rendering 有权
    具有高显色性能的半导体发光器件

    公开(公告)号：US08178888B2

    公开(公告)日：2012-05-15

    申请号：US12024400

    申请日：2008-02-01

    申请人： Arpan Chakraborty

    发明人： Arpan Chakraborty

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/50 ,  H01L33/06 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6.

    摘要翻译： 封装发光器件（LED）包括发光二极管，该发光二极管被配置为发射具有小于约465nm的峰值波长并且具有大于峰值波长的波长的肩发射分量的初级光，以及波长转换 被配置为接收由发光二极管发射的初级光并且响应地发射具有大于约0.4的ccx和小于约0.6的cx的色点的光的材料。

    LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE
    7.
    发明申请
    LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE 审中-公开
    具有耦合量子阱结构的发光器件

    公开(公告)号：US20110101301A1

    公开(公告)日：2011-05-05

    申请号：US12916218

    申请日：2010-10-29

    申请人： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    发明人： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC分类号： H01L33/06

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： A light emitting device with a coupled quantum well structure in an active region. The coupled quantum well structure may include two or more wells are separated by one or more mini-barriers, and the wells and mini-barriers together are sandwiched by barriers. The coupled quantum well structure provides almost the same effect as a wide quantum well, due to the coupling of the wavefunctions through the mini-barrier. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device.

    摘要翻译： 一种在有源区域中具有耦合的量子阱结构的发光器件。 耦合的量子阱结构可以包括两个或更多个孔被一个或多个微型屏障隔开，并且阱和微型屏障一起夹在屏障之间。 耦合量子阱结构提供了与宽量子阱几乎相同的效果，这是由于通过微型屏障的波函数的耦合。 发光器件可以是非极性，半极性或极性（Al，Ga，In）N基发光器件。

    Pendeo epitaxial structures and devices
    8.
    发明授权
    Pendeo epitaxial structures and devices 有权
    Pendeo外延结构和器件

    公开(公告)号：US07682944B2

    公开(公告)日：2010-03-23

    申请号：US11957154

    申请日：2007-12-14

    申请人： George R. Brandes ,  Arpan Chakraborty ,  Shuji Nakamura ,  Monica Hansen ,  Steven Denbaars

    发明人： George R. Brandes ,  Arpan Chakraborty ,  Shuji Nakamura ,  Monica Hansen ,  Steven Denbaars

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02639 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/66462

    摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.

    摘要翻译： 一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。 这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。 桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。 可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。