公开(公告)号：US20080173980A1

公开(公告)日：2008-07-24

申请号：US12013509

申请日：2008-01-14

申请人： Tomohiro Uno ,  Yoshitaka Nakamura

发明人： Tomohiro Uno ,  Yoshitaka Nakamura

IPC分类号： H01L29/92 ,  H01L21/20

CPC分类号： H01L28/82 ,  H01L27/10852

摘要： A method for fabricating a semiconductor device is disclosed. The semiconductor device includes a capacitor and a support insulator. The capacitor includes a cylindrical electrode. The cylindrical electrode comprises upper and lower sections. The lower section has a roughened inner surface and an outer surface supported by the support insulator. The upper section upwardly projects from the support insulator. An initial cylindrical electrode is formed, wherein the initial cylindrical electrode comprises an initial upper section and an initial lower section which correspond to the upper section and the lower section of the cylindrical electrode, respectively. The initial upper section is supported by the support insulator. Specific impurities are implanted into the initial upper section, wherein the specific impurities serve to prevent the initial upper section from being roughened. Then, the initial cylindrical electrode is exposed to a roughening process so that the initial lower section is roughened to be the lower section.

摘要翻译： 公开了一种制造半导体器件的方法。 半导体器件包括电容器和支撑绝缘体。 电容器包括圆柱形电极。 圆柱形电极包括上部和下部。 下部具有粗糙的内表面和由支撑绝缘体支撑的外表面。 上部从支撑绝缘体向上突出。 形成初始圆柱形电极，其中初始圆柱形电极分别包括对应于圆柱形电极的上部和下部的初始上部和初始下部。 最初的上部由支撑绝缘子支撑。 特定的杂质被注入到初始上部，其中特定的杂质用于防止初始上部被粗糙化。 然后，将初始的圆柱形电极暴露于粗糙化处理，使得初始下部被粗糙化为下部。

公开(公告)号：US07741176B2

公开(公告)日：2010-06-22

申请号：US12013509

申请日：2008-01-14

申请人： Tomohiro Uno ,  Yoshitaka Nakamura

发明人： Tomohiro Uno ,  Yoshitaka Nakamura

IPC分类号： H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/82 ,  H01L27/10852

摘要： A method for fabricating a semiconductor device is disclosed. The semiconductor device includes a capacitor and a support insulator. The capacitor includes a cylindrical electrode. The cylindrical electrode comprises upper and lower sections. The lower section has a roughened inner surface and an outer surface supported by the support insulator. The upper section upwardly projects from the support insulator. An initial cylindrical electrode is formed, wherein the initial cylindrical electrode comprises an initial upper section and an initial lower section which correspond to the upper section and the lower section of the cylindrical electrode, respectively. The initial upper section is supported by the support insulator. Specific impurities are implanted into the initial upper section, wherein the specific impurities serve to prevent the initial upper section from being roughened. Then, the initial cylindrical electrode is exposed to a roughening process so that the initial lower section is roughened to be the lower section.

摘要翻译： 公开了一种制造半导体器件的方法。 半导体器件包括电容器和支撑绝缘体。 电容器包括圆柱形电极。 圆柱形电极包括上部和下部。 下部具有粗糙的内表面和由支撑绝缘体支撑的外表面。 上部从支撑绝缘体向上突出。 形成初始圆柱形电极，其中初始圆柱形电极分别包括对应于圆柱形电极的上部和下部的初始上部和初始下部。 最初的上部由支撑绝缘子支撑。 特定的杂质被注入到初始上部，其中特定的杂质用于防止初始上部被粗糙化。 然后，将初始的圆柱形电极暴露于粗糙化处理，使得初始下部被粗糙化为下部。

公开(公告)号：US20070269954A1

公开(公告)日：2007-11-22

申请号：US11802052

申请日：2007-05-18

申请人： Yoshitaka Nakamura ,  Tomohiro Uno

发明人： Yoshitaka Nakamura ,  Tomohiro Uno

IPC分类号： H01L21/20

CPC分类号： H01L27/10894 ,  H01L27/10852 ,  H01L28/91

摘要： A process for forming bottom and top electrodes of a capacitor uses a source gas including tungsten nitride carbide (WNC) which contains no chlorine, to form an amorphous electrode film. This prevents the amorphous capacitor insulation from being crystallized, and also prevents addition of chlorine into the capacitor insulation film, during a later heat treatment. Prevention of crystallization and addition of chlorine suppresses deterioration of the capacitor insulation film, to thereby reduce the leakage current across the capacitor insulation film.

摘要翻译： 用于形成电容器的底部和顶部电极的方法使用包含不含氯的氮化钨（WNC）的源气体以形成非晶电极膜。 这防止非晶电容器绝缘结晶，并且还防止在稍后的热处理期间向电容器绝缘膜中加入氯。 防止结晶和添加氯抑制电容器绝缘膜的劣化，从而减少电容器绝缘膜两端的漏电流。

公开(公告)号：US08815019B2

公开(公告)日：2014-08-26

申请号：US12993401

申请日：2010-02-12

申请人： Tomohiro Uno ,  Shinichi Terashima ,  Takashi Yamada ,  Ryo Oishi ,  Daizo Oda

发明人： Tomohiro Uno ,  Shinichi Terashima ,  Takashi Yamada ,  Ryo Oishi ,  Daizo Oda

IPC分类号： B23K35/34

CPC分类号： C22C5/02 ,  B32B15/018 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C21/02 ,  C22C21/12 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/3025 ,  Y10T428/12222 ,  H01L2924/01001 ,  H01L2924/00014 ,  H01L2924/20754 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/01202 ,  H01L2924/01007 ,  H01L2924/01205 ,  H01L2224/45639 ,  H01L2224/45669 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20656 ,  H01L2924/20652 ,  H01L2924/20645 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

摘要： It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

摘要翻译： 本发明的目的是提供一种能够同时实现滚珠接合性能和线加工性的多层线材，并且提高了环路稳定性，拉伸强度和楔形粘合性能。 半导体接合线包括主要由等于或大于一种以下元素构成的芯部件：Cu，Au和Ag，以及形成在芯部件上并主要由Pd构成的外层。 总线中含有的总氢浓度在0.0001〜0.008质量％的范围内。

公开(公告)号：US08653668B2

公开(公告)日：2014-02-18

申请号：US13577199

申请日：2011-02-03

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： H01L23/49

CPC分类号： H01L24/48 ,  B23K35/0244 ,  B23K35/3046 ,  C22C9/00 ,  C22F1/08 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/01049 ,  H01L2924/01203 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01204

摘要： A bonding structure and a copper bonding wire for semiconductor device include a ball-bonded portion formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.

摘要翻译： 用于半导体器件的接合结构和铜接合线包括通过将形成在铜接合线的前端上的球接合到铝电极而形成的滚珠接合部。 在130℃至200℃之间的任何温度下加热后，球形接合部分的相对化合物比率R1为40-100％，相对化合物比例R1为Cu-Al 金属间化合物与由Cu和Al组成并形成在球形接合部分的横截面上的金属间化合物的厚度。

公开(公告)号：US08299356B2

公开(公告)日：2012-10-30

申请号：US12669662

申请日：2008-12-02

申请人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

发明人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

IPC分类号： H01B7/00

CPC分类号： C22C5/04 ,  B23K35/0222 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  C22C5/02 ,  C22C5/06 ,  C22C9/00 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01004 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01083 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/20652 ,  H01L2924/20656 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00014 ,  H01L2924/01202 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/0104 ,  H01L2924/01007 ,  H01L2924/01018 ,  H01L2924/01001 ,  H01L2924/20658 ,  H01L2924/20654 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/2075 ,  H01L2924/01049 ,  H01L2924/01006

摘要： A semiconductor-device bonding wire includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the orientations have an angular difference relative to the wire lengthwise direction, the angular difference being within 15 degrees.

摘要翻译： 半导体器件接合线包括由导电金属形成的芯部件和主要由与芯部件不同的面心立方金属形成的表皮层。 在表层的表面的晶面处的线长度方向上的结晶取向<111k方向的取向比大于或等于50％，并且<111>取向具有相对的角度差 在线长度方向上，角度差在15度以内。

公开(公告)号：US07820913B2

公开(公告)日：2010-10-26

申请号：US11794797

申请日：2006-01-05

申请人： Tomohiro Uno ,  Yukihiro Yamamoto

发明人： Tomohiro Uno ,  Yukihiro Yamamoto

IPC分类号： H01R4/62

CPC分类号： B23K20/004 ,  B23K35/0266 ,  B23K2101/38 ,  B23K2101/40 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/00013 ,  H01L2924/00012 ,  H01L2924/01049

摘要： The present invention provides a bonding wire improved in formability of a ball part, improved in bondability, good in loop controllability, improved in bonding strength of a wedge connection, securing industrial production ability as well, and mainly comprised of copper which is more inexpensive than gold wire, that is, provides a bonding wire for a semiconductor device comprised of a bonding wire having a core material having copper as its main ingredient and a surface covering layer over the core material and of a conductive metal of a composition different from the core material, characterized in that the surface covering layer has as its main ingredients two or more types of metals selected from gold, palladium, platinum, rhodium, silver, and nickel and the surface covering layer has a concentration gradient of one or both of a main ingredient metal or copper in the wire radial direction.

摘要翻译： 本发明提供了一种改善了球部成形性的接合线，提高了接合性，良好的环路控制性，提高了楔连接的接合强度，确保了工业生产能力，并且主要由铜成本比较便宜 金线，即提供一种用于半导体器件的接合线，该接合线包括具有以铜为主要成分的芯材和在芯材上的表面覆盖层的接合线和不同于芯的组成的导电金属 材料，其特征在于，所述表面被覆层的主要成分为选自金，钯，铂，铑，银和镍的两种以上的金属，所述表面被覆层的浓度梯度为主 成分金属或铜在线径方向。

公开(公告)号：US20090072399A1

公开(公告)日：2009-03-19

申请号：US12146792

申请日：2008-06-26

申请人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

发明人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

IPC分类号： H01L23/49

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05664 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48764 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/10253 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01013 ,  H01L2924/01004 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/01025 ,  H01L2924/013 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2224/4554

摘要： There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

摘要翻译： 提供了不会引起倾斜故障等的接合线。 半导体安装接合线的断裂伸长率为7〜20％，伸长率为1％的应力为拉伸强度的90％以上且小于等于100％。

公开(公告)号：US07390370B2

公开(公告)日：2008-06-24

申请号：US10502676

申请日：2003-10-03

申请人： Tomohiro Uno ,  Shinichi Terashima ,  Kohei Tatsumi

发明人： Tomohiro Uno ,  Shinichi Terashima ,  Kohei Tatsumi

IPC分类号： C22C5/02

CPC分类号： C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/01204 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  Y10T428/2913 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/01203 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01006

摘要： Gold bonding wires for semiconductor devices featuring increased strength and modulus of elasticity, stable loop shapes, suppressing the flow of wires, suppressing the leaning, and totally improved junctions of the wedge junction portions or wear characteristics for realizing a narrow-pitch connection, and enhanced the productivity on an industrial scale, and a method of producing the same. A gold bonding wire for a semiconductor device has a crystal grain structure in cross section in the lengthwise direction of the bonding wire, wherein a ratio of the area of crystal grains having an orientation [111] to the area of crystal grains having an orientation [100] is not smaller than 1.2 in the crystal orientations in the lengthwise direction of the wire.

摘要翻译： 用于半导体器件的金键合线具有增强的强度和弹性模量，稳定的环形形状，抑制线的流动，抑制倾斜，并且完全改善楔形接合部分的接合部或用于实现窄节距连接的磨损特性，并且增强 工业规模的生产率及其制造方法。 用于半导体器件的金键合线在接合线的长度方向具有截面的晶粒结构，其中具有取向[111]的晶粒面积与具有取向的晶粒面积的比例[ 100]在线的长度方向上的晶体取向不小于1.2。

公开(公告)号：US20080105975A1

公开(公告)日：2008-05-08

申请号：US11795921

申请日：2006-01-24

申请人： Keiichi Kimura ,  Tomohiro Uno

发明人： Keiichi Kimura ,  Tomohiro Uno

IPC分类号： H01L23/48

CPC分类号： B23K35/0261 ,  B23K35/3013 ,  C22C5/02 ,  C22F1/14 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/01013 ,  H01L2924/01004 ,  H01L2924/01062 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01003 ,  H01L2924/01039 ,  H01L2924/01069 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2224/48 ,  H01L2924/01006

摘要： Gold wire for connecting a semiconductor chip basically containing praseodymium in 0.0004 mass % to 0.02 mass % in range and, considering the bonding characteristics, containing beryllium or aluminum or both in limited ranges and, considering the precipitates formed in the gold wire, further containing auxiliary additive elements of calcium, lanthanum, cerium, neodymium, and samarium in limited ranges.

摘要翻译： 用于连接基本上含有0.0004质量％至0.02质量％的镨的半导体芯片的金线，考虑到包含铍或铝或两者的结合特性在有限的范围内，考虑到金线中形成的析出物，还含有助剂 有限的钙，镧，铈，钕和钐的添加元素。