Abstract:
The present invention concerns a system for allowing the restoration of an interconnection of a die of a power module, a first terminal of the interconnection being fixed on the die and a second terminal of the interconnection being connected to an electric circuit. The system comprises: - at least one material located in the vicinity of the first terminal of the interconnection, the material having a predetermined melting temperature, - means for controlling the temperature of the die at the predetermined melting temperature during a predetermined period of time. The present invention concerns also the method.
Abstract:
Die Erfindung betrifft ein Leistungshalbleitermodul (10) aufweisend: • wenigstens ein Substrat (4); • wenigstens einen auf dem Substrat (4) angeordneten Leistungshalbleiter (2), der auf seiner dem Substrat abgewandten Seite eine Anschlussfläche (21) aufweist; • eine auf dem Substrat (4) neben dem Leistungshalbleiter (2) angeordnete, gegebenenfalls segmentierte Lastpotenzialfläche (23); • mehrere Bondverbindungen (25, 26) zur parallelen elektrisch leitenden Verbindung der Anschlussfläche (21) mit der Lastpotenzialfläche (23), wobei jede Bondverbindung (25, 26) wenigstens einen ersten Bondfuß (31) auf der Lastpotenzialfläche (23) und mehrere zweite Bondfüße (32) auf der Anschlussfläche (21) aufweist und wobei jede Bondverbindung (25, 26) auf der Anschlussfläche (21) wenigstens ein Ende aufweist, • wobei die mehreren Bondverbindungen (25, 26) in wenigstens zwei Gruppen (25 bzw. 26) aus mehreren Bondverbindungen gleicher Anzahl von Bondfüßen arrangiert sind und die zweiten Bondfüße (32) jeder Bondverbindung einer Gruppe ausschließlich in einem durch eine Teilfläche der Anschlussfläche definierten Segment oder Bereich (22a bzw. 22b) der Anschlussfläche (21) angeordnet sind und die Gruppen sich dahingehend unterscheiden, dass deren erste Bondfüße (31) in einem unterschiedlichen, bevorzugt aber innerhalb jeder Gruppe übereinstimmenden, Abstand (a 1 bzw. a 2 ) zum Leistungshalbleiter (2) auf der Lastpotenzialfläche (23) angeordnet sind.
Abstract:
The invention relates to a wire and a method of manufacture, the wire comprising at least a core comprising copper (2) and elemental phosphorus; a first coating layer (3) composed of at least one element selected from the group comprising of palladium, platinum and silver; a further coating layer (41) composed of at least one element selected from silver and gold; wherein at least one of the following conditions is met: Al) the ratio of the average grain size of the crystal grains in the core and the diameter of the wire is in the range of from 0.14 - 0.28 and the relative standard deviation RSD of the average grain size is less than 0.9; or A2) the degree of recrystallization of the crystal grains in the core is in the range of from 50 to 95 %; or A3) the fraction of twin boundaries is in the range of from 2 to 25 %; or A4) 18 to 42 % of the grains of the wire are oriented in direction and 27 to 38 % of the grains of the wire are oriented in direction.
Abstract:
본 발명은 별도의 션트저항을 구비하지 않고 기존의 내부적으로 본딩된 와이어를 이용하여 션트저항의 역할을 대신하도록 되어 있는 배터리 보호 IC 장치로서, 보호 IC 및 제1 FET를 포함하는 칩 및 상기 칩과 분리되어 있는 제1 도전패드가 배치되어 있는 베이스기판 및 션트저항을 포함하며, 상기 션트저항의 일단부는 상기 칩 상에 존재하는 과전류감지단자에 직접 연결되고, 상기 션트저항의 타단부는 상기 칩 상에 존재하는 접지기준단자에 상기 제1 도전패드를 거쳐 연결될 수 있다.
Abstract:
A die package having lead structures connecting to a die that provide for electromagnetic interference reductions. Mixed impedance leads connected to said die have a first lead with a first metal core (302), a dielectric layer (300,304) surrounding the first metal core (302), and first outer metal layer (306) connected to ground; and a second lead with a second metal core (302), and a second dielectric layer (300,304) surrounding the second metal core (302), and a second outer metal layer (306) connected to ground. Each lead reducing susceptibility to EMI and crosstalk.
Abstract:
The present invention relates to a die interconnect system, comprising a first die (1) having a plurality of connection pads (3), and at least one interconnect (10,20) extending from the first die (1), the interconnect having a plurality of metal cores (12,42) with a core diameter, and a dielectric layer (15,43) surrounding the metal cores (12,42) with a dielectric thickness, with at least a portion of dielectric layer (15, 43) surrounding adjacent metal cores (12,42) along the length of the plurality of metal cores (12,42), and an outer metal layer (41) attached to ground.
Abstract:
The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises copper as a main component, wherein the core comprises copper as a main component, wherein an average size of crystal grains in the core is between 2.5 μm and 30 μm, and wherein a yield strength of the bonding wire is less than 120 MPa.
Abstract:
An electronic device comprises a semiconductor chip (200) with a surface. A bond pad (230) is arranged on said surface. A layer of electrically insulating material (240) is arranged on said surface in a section of said surface. The section is arranged between said bond pad (230) and an edge of said surface. A bond wire (110) is arranged between said bond pad (230) and a contact pad (330).
Abstract:
The invention is related to a bonding wire, comprising a core (2) with a surface, wherein the core comprises copper as a main component, and a coating layer (3) superimposed over the surface of the core (2), wherein the coating layer (3) comprises palladium as a main component, wherein the core (2) comprises at least 5 wt.ppm silver and at least 20 wt. ppm phosphorus as further components, wherein the wire meets the relation 0.0008
Abstract:
The invention relates to a wire, preferably a bonding wire for bonding in microelectronics, comprising a copper core (2) with a surface and coating layer (3), which coating layer (3) is superimposed over the surface of the core (2), wherein the coating layer (3) comprises aluminium, wherein in any cross-sectional view of the wire the area share of the coating layer (3) is in the range of from 20 to 50 %, based on the total area of the cross-section of the wire, and wherein the aspect ratio between the longest path and the shortest path through the wire in any cross-sectional view is in the range of from larger than 0.8 to 1.0, and wherein the wire has a diameter in the range of from 100 μm to 600 μm. The invention further relates to a process for making a wire, to a wire obtainable by said process, to an electric device comprising at least two elements and at least aforementioned wire, to a propelled device comprising said electric device and to a process of connecting two elements through aforementioned wire by wedge bonding.