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公开(公告)号:WO2015118612A1
公开(公告)日:2015-08-13
申请号:PCT/JP2014/052570
申请日:2014-02-04
申请人: 千住金属工業株式会社
CPC分类号: B23K35/0244 , B22F1/0003 , B22F1/0048 , B22F1/025 , B22F9/08 , B22F9/082 , B22F9/14 , B22F2009/0848 , B22F2301/10 , B22F2301/15 , B22F2998/10 , B22F2999/00 , B23K1/0016 , B23K1/008 , B23K3/0623 , B23K35/302 , B23K35/3033 , B23K2201/42 , C22C9/00 , C22C19/03 , C22F1/08 , C22F1/10 , H01L23/49816 , H01L23/556 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/111 , H01L2224/11334 , H01L2224/13014 , H01L2224/13016 , H01L2224/13105 , H01L2224/13109 , H01L2224/13117 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13138 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13163 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13172 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13183 , H01L2224/13184 , H01L2224/132 , H01L2224/13211 , H01L2224/13294 , H01L2224/133 , H01L2224/13305 , H01L2224/13309 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13338 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13363 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1337 , H01L2224/13371 , H01L2224/13372 , H01L2224/13373 , H01L2224/13376 , H01L2224/13378 , H01L2224/13379 , H01L2224/1338 , H01L2224/13381 , H01L2224/13383 , H01L2224/13384 , H01L2224/1339 , H01L2224/136 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2224/1369 , H01L2224/16145 , H01L2224/16225 , H01L2224/81011 , H01L2924/381 , H01L2924/3841 , H05K3/3436 , H05K3/3463 , H05K2203/041 , B22F2202/13 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01049 , H01L2924/01028 , H01L2924/01027 , H01L2924/01051 , H01L2924/01032 , H01L2924/01015 , H01L2924/01026 , H01L2924/01082 , H01L2924/01079 , H01L2924/01092 , H01L2924/0109 , H01L2924/01033 , H01L2924/00014 , H01L2924/01203 , H01L2924/01204 , H01L2924/0105 , H01L2924/01083 , H01L2924/0103 , H01L2924/01048 , H01L2924/01016 , H01L2924/01013 , H01L2924/01012 , H01L2924/01022 , H01L2924/01025 , H01L2924/0106 , H01L2924/01071 , H01L2924/01069 , H01L2924/01021 , H01L2924/01068 , H01L2924/01059 , H01L2924/01067 , H01L2924/01066 , H01L2924/01065 , H01L2924/01064 , H01L2924/01061 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/0107 , H01L2924/01058 , H01L2924/01038 , H01L2924/01056 , H01L2924/01052 , H01L2924/01076 , H01L2924/01072 , H01L2924/01043 , H01L2924/01004
摘要: 放射されるα線量を抑えた金属球を製造する。 純金属に含まれる不純物の中で、除去対象とした不純物の気圧に応じた沸点より高い沸点を有し、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、純度が99.9%以上99.995%以下であり、PbまたはBiのいずれかの含有量、あるいは、PbおよびBiの合計の含有量が1ppm以上である純金属を、除去対象とした不純物の沸点より高く、純金属の融点より高く、かつ、純金属の沸点より低い温度で加熱して、純金属を溶融させる工程と、溶融した純金属を球状に造球する工程を含む。
摘要翻译: 本发明产生抑制辐射α剂量的金属球。 该方法包括通过在比待除去的杂质的沸点高于纯金属的熔点的温度下加热下列物质并且低于纯金属的沸点来熔化纯金属的步骤 金属:根据大气压,在纯金属中所含杂质中除去的杂质沸点高于沸点的纯金属的U含量为5ppb以下,Th含量为5ppb 以下,纯度为99.9-99.995%,含铅量,Bi含量或Pb和Bi组合的总和为1ppm以上。 该方法还包括通过将熔融的纯金属制成球形形成球的步骤。
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公开(公告)号:WO2015192004A1
公开(公告)日:2015-12-17
申请号:PCT/US2015/035566
申请日:2015-06-12
申请人: ALPHA METALS, INC.
发明人: GHOSHAL, Shamik , KUMAR, V., Sathish , VISHWANATH, Pavan , PANDHER, Ranjit, S. , CHANDRAN, Remya , MUKHERJEE, Sutapa , SARKAR, Siuli , SINGH, Bawa , BHATKAL, Ravindra, Mohan
CPC分类号: B22F1/0044 , B22F1/02 , B22F3/1017 , B22F3/22 , B22F5/006 , B22F7/04 , B22F2007/047 , B22F2301/255 , B22F2999/00 , B23K1/0016 , B23K3/0607 , B23K35/0244 , B23K35/3006 , B23K2201/40 , H01L21/6835 , H01L21/78 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/94 , H01L24/95 , H01L24/97 , H01L2221/68313 , H01L2221/68368 , H01L2224/04026 , H01L2224/05155 , H01L2224/05639 , H01L2224/11003 , H01L2224/11009 , H01L2224/111 , H01L2224/11332 , H01L2224/11334 , H01L2224/11438 , H01L2224/1144 , H01L2224/11505 , H01L2224/11848 , H01L2224/13139 , H01L2224/13294 , H01L2224/13295 , H01L2224/13311 , H01L2224/13324 , H01L2224/13339 , H01L2224/13347 , H01L2224/13355 , H01L2224/13363 , H01L2224/1338 , H01L2224/13384 , H01L2224/13387 , H01L2224/1339 , H01L2224/13393 , H01L2224/13411 , H01L2224/13439 , H01L2224/13444 , H01L2224/13455 , H01L2224/13464 , H01L2224/13469 , H01L2224/1349 , H01L2224/16227 , H01L2224/27002 , H01L2224/27003 , H01L2224/27009 , H01L2224/271 , H01L2224/27312 , H01L2224/2732 , H01L2224/27332 , H01L2224/27334 , H01L2224/27438 , H01L2224/2744 , H01L2224/27505 , H01L2224/2782 , H01L2224/27821 , H01L2224/27848 , H01L2224/29139 , H01L2224/29294 , H01L2224/29295 , H01L2224/29311 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29363 , H01L2224/29364 , H01L2224/2938 , H01L2224/29384 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/29411 , H01L2224/29439 , H01L2224/29444 , H01L2224/29455 , H01L2224/29464 , H01L2224/29469 , H01L2224/2949 , H01L2224/2969 , H01L2224/32225 , H01L2224/32245 , H01L2224/45014 , H01L2224/75251 , H01L2224/75316 , H01L2224/7598 , H01L2224/81002 , H01L2224/81191 , H01L2224/8184 , H01L2224/81948 , H01L2224/83002 , H01L2224/83191 , H01L2224/83193 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/8384 , H01L2224/83948 , H01L2224/94 , H01L2224/95 , H01L2224/97 , H01L2924/00014 , H01L2924/0463 , H01L2924/0503 , H01L2924/05032 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/2064 , H05K3/32 , H05K2203/1131 , B22F1/0018 , B22F1/025 , H01L2224/11 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2224/27 , H01L2924/01046 , H01L2924/01029 , H01L2924/01042 , H01L2924/01028 , H01L2924/0105 , H01L2924/01006 , H01L2924/01005 , H01L2224/45015 , H01L2924/207
摘要: Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.
摘要翻译: 包括倒装芯片在内的多芯片和单一部件的裸片附着方法可以包括在基片上或模具的背面上印刷烧结膏。 打印可能涉及模版印刷,丝网印刷或分配过程。 糊剂可以在切割之前或在单独的模具的背面上印刷在整个晶片的背面。 烧结膜也可以被制造并转移到晶片,管芯或衬底。 后烧结步骤可以增加生产量。
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