公开(公告)号：EP2469595A1

公开(公告)日：2012-06-27

申请号：EP11192789.3

申请日：2011-12-09

申请人： Analog Devices, Inc.

发明人： O'Donnell, Alan ,  Iriarte, Santiago ,  Murphy, Mark J ,  Lyden, Colin ,  Casey, Gary ,  English, Eoin Edward

IPC分类号： H01L25/16

CPC分类号： G01N27/226 ,  B81B7/00 ,  B81B7/007 ,  B81B2201/0214 ,  G01N27/4148 ,  H01F17/04 ,  H01L21/82 ,  H01L23/3677 ,  H01L23/38 ,  H01L23/473 ,  H01L23/481 ,  H01L23/58 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/94 ,  H01L25/16 ,  H01L25/167 ,  H01L27/0694 ,  H01L28/10 ,  H01L28/20 ,  H01L28/60 ,  H01L28/82 ,  H01L28/86 ,  H01L28/90 ,  H01L31/0547 ,  H01L31/056 ,  H01L35/30 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48265 ,  H01L2225/06531 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H02S40/38 ,  Y02E10/52 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05552 ,  H01L2224/85399 ,  H01L2224/05599

摘要： Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer.

摘要翻译： 本发明的实施例提供了一种集成电路系统，其包括在半导体管芯的前侧制造的第一有源层和在半导体管芯的背面上的第二预制层，并且具有体现在其中的电气部件，其中电气部件 包括至少一个分立的无源部件。 集成电路系统还包括耦合第一有源层和第二预制层的至少一个电路径。

公开(公告)号：EP2362417A3

公开(公告)日：2012-05-23

申请号：EP11004204.1

申请日：2009-09-02

申请人： Linear Technology Corporation

发明人： Pruitt, David, A.

IPC分类号： H01L23/64 ,  H01L23/495 ,  H01F19/08

CPC分类号： H01F19/08 ,  H01F38/14 ,  H01F2019/085 ,  H01F2027/2814 ,  H01L23/48 ,  H01L23/4952 ,  H01L23/642 ,  H01L23/645 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L2223/6611 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48491 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/49052 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49176 ,  H01L2224/4943 ,  H01L2224/85455 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/48824

摘要： A semiconductor device (200) configured to provide current and voltage isolation inside an integrated circuit package, the semiconductor device comprising:
a lead frame (210) including a first set of leads (220,222,224,226) and a second set of leads (230,232,234,236), the first set of leads being isolated from the second set of leads;
a semiconductor die (240) positioned on the lead frame (210);
an isolating block (250) positioned on the semiconductor die;
a first interconnect coil (202) formed by a first set of wires (260,262,264,266), the semiconductor die, and the first set of leads; and
a second interconnect coil (204) isolated from the first interconnect coil and formed by a second set of wires (280,282,284,286), the isolating block, and the second set of leads.

公开(公告)号：EP2439776A2

公开(公告)日：2012-04-11

申请号：EP11008116.3

申请日：2011-10-06

申请人： Broadcom Corporation

发明人： Zhao, Sam Ziqun ,  Behzad, Arya ,  Boers, Michael ,  Rofougaran, Ahmadreza ,  Castaneda, Jesus

IPC分类号： H01L23/66 ,  H01L23/48 ,  H01L23/367 ,  H01Q1/38 ,  H01Q1/22

CPC分类号： H01L23/66 ,  H01L23/48 ,  H01L23/481 ,  H01L23/5227 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1903 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19051 ,  H01L2924/19104 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： An integrated circuit (IC) device arrangement includes a substrate (202), an IC die (204) coupled to the substrate, an antenna (206) coupled to the IC die, and a first wirelessly enabled functional block (210) coupled to the IC die. The wirelessly enabled functional block is configured to wirelessly communicate with a second wirelessly enabled functional block (212) coupled to the substrate. The antenna is configured to communicate with another antenna coupled to another device.

摘要翻译： 集成电路（IC）器件装置包括衬底（202），耦合到衬底的IC管芯（204），耦合到IC管芯的天线（206）和耦合到IC管芯的第一无线功能功能块 IC死。 无线启用的功能块被配置为与耦合到该基板的第二无线功能功能块（212）进行无线通信。 天线被配置为与耦合到另一设备的另一天线进行通信。

公开(公告)号：EP1952312B1

公开(公告)日：2012-02-01

申请号：EP06811658.1

申请日：2006-10-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： SHIONOIRI, Yutaka

IPC分类号： G06K19/07 ,  G06K19/077 ,  H01Q1/38 ,  H01Q7/00

CPC分类号： G06K19/07745 ,  G06K19/07749 ,  G06K19/07756 ,  G06K19/07779 ,  H01L23/48 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01Q1/2216 ,  H01Q7/00 ,  H01Q23/00 ,  H01L2924/00

摘要： With respect to a semiconductor device which communicates data by wireless communication, an object of the present invention is to improve sensitivity of an antenna and to protect a chip from noise without increasing the size of the device. A coiled antenna and a semiconductor integrated circuit which is electrically connected to the coiled antenna are included. The semiconductor integrated circuit is arranged so as to overlap with the coiled antenna. In this manner, arrangement of the coiled antenna and the semiconductor integrated circuit in the semiconductor device is devised, so that sensitivity of the antenna can be improved and power enough to operate the semiconductor integrated circuit can be obtained without increasing the size of the device.

公开(公告)号：EP2393111A1

公开(公告)日：2011-12-07

申请号：EP11168190.4

申请日：2011-05-31

申请人： NXP B.V.

发明人： Blednov, Igor

IPC分类号： H01L23/49 ,  H01L23/52 ,  H01L23/66 ,  H01L27/04 ,  H03F1/56 ,  H03F1/02

CPC分类号： H03F1/565 ,  H01L23/645 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/49174 ,  H01L2224/49176 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/0288 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A bond wire circuit includes bond wires arranged relatively to provide a selected inductance. In connection with various example embodiments, respective bond wire loops including forward and return current paths are arranged orthogonally. Each loop includes a forward bond wire connecting an input terminal with an intermediate terminal, and a return bond wire connecting the intermediate terminal to an output terminal. The return bond wires generally mitigate return current flow from the intermediate terminal in an underlying substrate. In some implementations, the loops are arranged such that current flowing in each of the respective loops generates equal and self-cancelling current in the other of the respective loops.

摘要翻译： 接合线电路包括相对于提供所选择的电感布置的接合线。 结合各种示例实施例，包括正向和回流电流路径的各个接合线环路被布置成正交。 每个环路包括将输入端子与中间端子连接的正向接合线以及将中间端子连接到输出端子的返回接合线。 返回接合线通常减轻来自底层衬底中的中间端子的回流电流。 在一些实施方案中，循环被布置成使得在每个相应回路中流动的电流在相应回路中的另一个中产生相等的自消除电流。

公开(公告)号：EP2362417A2

公开(公告)日：2011-08-31

申请号：EP11004204.1

申请日：2009-09-02

申请人： Linear Technology Corporation

发明人： Pruitt, David, A.

IPC分类号： H01L25/07 ,  H01L23/64 ,  H01L23/495

CPC分类号： H01F19/08 ,  H01F38/14 ,  H01F2019/085 ,  H01F2027/2814 ,  H01L23/48 ,  H01L23/4952 ,  H01L23/642 ,  H01L23/645 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L2223/6611 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48491 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/49052 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49176 ,  H01L2224/4943 ,  H01L2224/85455 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/48824

摘要： A semiconductor device configured to provide current and voltage isolation inside an integrated circuit package, the semiconductor device comprising:
a lead frame including a first set of leads and a second set of leads, the first set of leads being isolated from the second set of leads;
a semiconductor die positioned on the lead frame;
an isolating block positioned on the semiconductor die;
a first interconnect coil formed by a first set of wires, the semiconductor die, and the first set of leads; and
a second interconnect coil isolated from the first interconnect coil and formed by a second set of wires, the isolating block, and the second set of leads.

摘要翻译： 一种半导体器件（200），被配置为在集成电路封装内提供电流和电压隔离，所述半导体器件包括：引线框架（210），包括第一组引线（220,222,224,226）和第二组引线（230,232,234,236），所述引线框架 第一组引线与第二组引线隔离; 定位在引线框架（210）上的半导体管芯（240）; 位于所述半导体管芯上的隔离块（250）; 由第一组线（260,262,264,266）形成的第一互连线圈（202），所述半导体管芯和所述第一组引线; 以及与第一互连线圈隔离并由第二组电线（280,282,284,286），隔离块和第二组引线形成的第二互连线圈（204）。

公开(公告)号：EP2287889A3

公开(公告)日：2011-08-17

申请号：EP10012699.4

申请日：2001-08-27

申请人： Megica Corporation

发明人： Lin, Mou-Shiung

IPC分类号： H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/60 ,  H01L27/08

CPC分类号： H01L28/10 ,  H01L21/768 ,  H01L21/76807 ,  H01L21/76838 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/5286 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/60 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L24/03 ,  H01L24/05 ,  H01L27/0676 ,  H01L27/08 ,  H01L28/20 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15174 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10S257/92 ,  H01L2924/00

摘要： . An integrated circuit chip comprising:
- a silicon substrate;
- a first dielectric layer over said silicon substrate;
- a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer,wherein said metallization structure comprises electroplated copper;
- a second dielectric layer between said first and second metal layers;
- a separating layer over said metallization structure and over said first and second dielectric layers, wherein said separating layer comprises a nitride layer having a thickness between 0.5 and 2 micrometers;
- a third metal layer over said separating layer, wherein said third metal layer comprises at least a portion, vertically over said separating layer, of an inductor, wherein said third metal layer comprises electroplated copper; and
- a first polymer layer over said third metal layer.

公开(公告)号：EP1667227A4

公开(公告)日：2011-08-03

申请号：EP05703870

申请日：2005-01-20

申请人： PANASONIC CORP

发明人： NAKATANI SEIICHI ,  MITANI TSUTOMU

IPC分类号： H01L25/18 ,  H01L23/31 ,  H01L23/66 ,  H01L25/04 ,  H01L25/065 ,  H01L25/10 ,  H05K1/02 ,  H05K1/18

CPC分类号： H05K1/02 ,  H01L23/3128 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H05K1/181 ,  H05K2201/10098 ,  H05K2201/1053 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A module that can not only achieve the reduction in size and manufacturing cost but also be impervious to noise due to electromagnetic waves, and a mounted structure using the same are provided. A module (1) includes a substrate (12) and a plurality of semiconductor packages (11a, 11b), each including a semiconductor chip (10), mounted on the substrate (12). Each of the plurality of semiconductor packages (11a, 11b) includes a first radio communication element (16) for transmitting and receiving a signal between the semiconductor chips (10) in the plurality of semiconductor packages (11a, 11b) by radio communication, and the first radio communication element (16) is constituted independently of the semiconductor chip (10).

摘要翻译： 提供了一种不仅可以实现尺寸和制造成本的降低，而且还可以防止由于电磁波而产生的噪声的模块，并且提供了使用其的安装结构。 模块（1）包括基板（12）和多个半导体封装（11a，11b），每个半导体封装包括安装在基板（12）上的半导体芯片（10）。 多个半导体封装（11a，11b）中的每一个包括用于通过无线电通信在多个半导体封装（11a，11b）中的半导体芯片（10）之间发送和接收信号的第一无线电通信元件（16），以及 第一无线电通信元件（16）独立于半导体芯片（10）构成。

公开(公告)号：EP2287891A3

公开(公告)日：2011-04-27

申请号：EP10012711.7

申请日：2001-08-27

申请人： Megica Corporation

发明人： Lin, Mou-Shiung

IPC分类号： H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/60 ,  H01L27/08

CPC分类号： H01L28/10 ,  H01L21/768 ,  H01L21/76807 ,  H01L21/76838 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/5286 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/60 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L24/03 ,  H01L24/05 ,  H01L27/0676 ,  H01L27/08 ,  H01L28/20 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15174 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10S257/92 ,  H01L2924/00

摘要： The present invention extends the above referenced continuation-in-part application by in addition creating high quality electrical components, such as inductors, capacitors or resistors, on a layer of passivation or on the surface of a thick layer of polymer. In addition, the process of the invention provides a method for mounting discrete electrical components at a significant distance removed from the underlying silicon surface.

摘要翻译： 本发明通过另外在钝化层上或在厚聚合物层的表面上产生高质量的电气元件（例如电感器，电容器或电阻器）来扩展上述部分继续申请。 此外，本发明的方法提供了一种用于将离散的电气部件安装在从下面的硅表面去除的显着距离的方法。

公开(公告)号：EP2308066A1

公开(公告)日：2011-04-13

申请号：EP09799906.4

申请日：2009-07-23

申请人： ATI Technologies ULC

发明人： MCLELLAN, Neil ,  GUO, Fei ,  CHUNG, Daniel ,  CHEUNG, Terence

IPC分类号： H01G13/00 ,  H01G4/30 ,  H01G4/33 ,  H01L21/70

CPC分类号： H01L23/5223 ,  H01G4/008 ,  H01G4/01 ,  H01G4/33 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/642 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/02375 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05576 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1133 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/14133 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Various on-chip capacitors and methods of making the same are disclosed. In one aspect, a method of manufacturing a capacitor is provided that includes forming a first conductor structure on a semiconductor chip and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. The under bump metallization structure overlaps at least a portion of the first conductor structure to provide a capacitor.

摘要翻译： 公开了各种片上电容器及其制造方法。 一方面，提供了一种制造电容器的方法，包括在半导体芯片上形成第一导体结构并在第一导体结构上形成钝化结构。 在钝化结构上形成凹凸金属化结构。 凸起下金属化结构与第一导体结构的至少一部分重叠以提供电容器。